A substrate processing apparatus includes: a processing container that accommodates a substrate; a processing gas supply that supplies a processing gas into the processing container; an exhaust that exhausts an inside of the processing container; a heater that heats the processing container; and a cooling gas injector that injects a cooling gas for cooling the substrate.

The invention relates to a microwave plasma-assisted deposition modular reactor for manufacturing synthetic diamond. The reactor has at least three modulation elements selected from: a crown adapted to be positioned between a first enclosure part and a second enclosure part; a substrate holder module mobile in vertical translation and in rotation, in contact with a quarter-wave and including at least one fluid cooling system; a tray mobile in vertical translation in order to change the shape and volume of the resonant cavity and including through openings allowing the gases to pass; a gas distribution module, including a removable gas distribution plate comprising an inner surface, an outer surface, and a plurality of gas distribution nozzles forming channels between said surfaces capable of conducting a gas flow, and a support device connected to a cooling system and adapted to accommodate the removable gas distribution plate; and a substrate cooling control module including a removable thermal resistance gas injection device.

Apparatus and methods for providing backside pressure control and edge purge gas to a substrate in a processing chamber. A seal band within a pocket of a substrate support defines an inner pocket region and an outer pocket region. The seal band has a pressure dependent controlled leakage rate so that a backside gas flow to the inner pocket region can diffuse through the seal band to the outer pocket region to create an edge purge while providing backside pressure to the substrate. Processing chambers, methods of processing a substrate and non-transitory computer-readable medium containing instructions to process a substrate are also disclosed.

Embodiments described herein relate to a substrate support assembly which enables adjustment of the thermal conductivity therein. The substrate support assembly has heater and cooling channel. An adjustable thermal break disposed between the heater and the cooling channel. The adjustable thermal break has one or more fluid conduits coupled thereto and configured to flow a fluid into and out of the adjustable thermal break for variant the thermal conductivity between the heater and the cooling channel.

Chemical deposition reactor assembly configured for formation of coatings on surfaces of fluid-permeable materials, such as porous materials, by chemical deposition is provided, the reactor assembly includes a reaction chamber configured to receive, at least in part, a fluid-permeable substrate with a target surface to be coated; at least one reactive fluid intake line configured to mediate a flow of reactive fluid into the reaction chamber, and an inert fluid delivery arrangement with at least one enclosed section configured to mediate a flow of inert fluid through the substrate towards its' target surface such, that at the surface the flow of inert fluid encounters the flow of reactive fluid, whereby a coating is formed at the target surface of the fluid-permeable substrate.

A wafer boat cooldown device comprising a bottom plate and a rotatable table that is rotatable between a number of index positions. The rotatable table comprises at least two wafer boat positions for supporting a wafer boat. A vertically extending wall structure is mounted on the rotatable table and creates, at each wafer boat position, a wafer boat chamber having a gas supply area and a gas discharge area. The wafer boat cooldown device further comprises a plenum chamber which extends under the bottom plate. The plenum chamber accommodates at least one gas/liquid heat exchanger.

In a capacitively coupled etch reactor, in which the smaller electrode is etched, the larger electrode is electrically supplied by a very high frequency supply signal and by a high frequency supply signal. The smaller electrode, acting as a substrate carrier, is connected to ground potential.

According to various embodiments, the temperature control roller may comprise: a cylindrical roller shell, which has a multiplicity of gas outlet openings; a temperature control device, which is configured to supply and/or extract thermal energy to or from the cylindrical roller shell; multiple gas lines made to extend along the axis of rotation; a gas distributing structure, which couples the multiple gas lines and the multiplicity of gas outlet openings to one another in a gas-conducting manner, the gas distributing structure having a lower structure density than the multiplicity of gas outlet openings.

A substrate fixing device includes a base plate including therein a gas supply section, and an electrostatic chuck provided on the base plate. The electrostatic chuck includes a base having a mounting surface on which a target to be held by electrostatic attraction is mounted, an insertion hole, penetrating the base, having an inner surface that defines the insertion hole and is threaded to foLm a female thread, and a screw member, having an outer surface that is threaded to form a male thread, and inserted into the insertion hole to assume a mated state in which the male thread mates with the female thread. A gas from the gas supply section is supplied to the mounting surface via the screw member.

A method of controlling a substrate processing apparatus that includes a stage, an annular member, a gas introduction mechanism, an exhaust part and a heat transfer gas introduction supply/exhaust part, the method including: mounting a substrate on the stage, and mounting the annular member on the substrate to press the substrate; creating a pressure of a heat transfer gas to be supplied into a space formed between a rear surface of the substrate and a front surface of the stage using the heat transfer gas supply/exhaust part; supplying the heat transfer gas into the space from the heat transfer gas supply/exhaust part; introducing the gas from the gas introduction mechanism into a container; exhausting the heat transfer gas from the space through an orifice; subsequently, exhausting the heat transfer gas from the space; and removing the annular member from the substrate.