Provided are methods of depositing tantalum-containing films via atomic layer deposition and/or chemical vapor deposition. The method comprises exposing a substrate surface to flows of a first precursor comprising TaCl.sub.xR.sub.5-x, TaBr.sub.xR.sub.5-x or TaI.sub.xR.sub.5-x, wherein R is a non-halide ligand, and a second precursor comprising an aluminum-containing compound, wherein x has a value in the range of 1 to 4. The R group may be C1-C5 alkyl, and specifically methyl. The resulting films comprise tantalum, aluminum and/or carbon. Certain other methods relate to reacting Ta.sub.2Cl.sub.10 with a coordinating ligand to provide TaCl.sub.5 coordinated to the ligand. A substrate surface may be exposed to flows of a first precursor and second precursor, the first precursor comprising the TaCl.sub.5 coordinated to a ligand, the second precursor comprising an aluminum-containing compound.

Provided are methods of depositing tantalum-containing films via atomic layer deposition and/or chemical vapor deposition. The method comprises exposing a substrate surface to flows of a first precursor comprising TaCl.sub.xR.sub.5-x, TaBr.sub.xR.sub.5-x or TaI.sub.xR.sub.5-x, wherein R is a non-halide ligand, and a second precursor comprising an aluminum-containing compound, wherein x has a value in the range of 1 to 4. The R group may be C1-C5 alkyl, and specifically methyl. The resulting films comprise tantalum, aluminum and/or carbon. Certain other methods relate to reacting Ta.sub.2Cl.sub.10 with a coordinating ligand to provide TaCl.sub.5 coordinated to the ligand. A substrate surface may be exposed to flows of a first precursor and second precursor, the first precursor comprising the TaCl.sub.5 coordinated to a ligand, the second precursor comprising an aluminum-containing compound.

A substrate processing apparatus includes: a reaction tube with a process chamber defined therein, the process chamber being configured to process a substrate; a heating device configured to heat the process chamber; a gas supply part configured to supply a process gas used in processing the substrate; and a plasma generating part including an electrode composed of a first electrode portion connected to a high frequency power supply and a second electrode portion grounded to the earth, which are installed to surround the entire circumference of an outer wall of the reaction tube. An inter-electrode distance between the first electrode portion and the second electrode portion is determined by at least a frequency of the high frequency power supply and a voltage applied across the electrode. The first and second electrode portions are installed based on the determined inter-electrode distance.

A plasma enhanced chemical vapor deposition (PECVD) method includes loading a wafer having a magnetic layer thereon into a processing chamber equipped with a radio frequency (RF) system, introducing an aromatic hydrocarbon precursor into the processing chamber, and turning on an RF source of the RF system to decompose the aromatic hydrocarbon precursor into active radicals at a frequency greater than about 1000 Hz to form a graphene layer over the magnetic layer.

The present invention provides an improved plasma source configuration comprising a vacuum chamber having the source. A dielectric member is in communication with the vacuum chamber and surrounded by the plasma source. A high aspect ratio gap is formed between a film breaker and the dielectric member.

The invention includes apparatus and methods for instantiating and quantum printing materials, such as elemental metals, in a nanoporous carbon powder.

A material deposition system comprises a precursor source and a chemical vapor deposition apparatus in selective fluid communication with the precursor source. The precursor source configured to contain at least one metal-containing precursor material in one or more of a liquid state and a solid state. The chemical vapor deposition apparatus comprises a housing structure, a distribution manifold, and a substrate holder. The housing structure is configured and positioned to receive at least one feed fluid stream comprising the at least one metal-containing precursor material. The distribution manifold is within the housing structure and is in electrical communication with a signal generator. The substrate holder is within the housing structure, is spaced apart from the distribution assembly, and is in electrical communication with an additional signal generator. A microelectronic device and methods of forming a microelectronic device also described.

Fabricating a semiconductor substrate by (a) vertical etching a feature having sidewalls and a depth into one or more layers formed on the semiconductor substrate and (b) depositing an amorphous carbon liner onto the sidewalls of the feature. Steps (a) and optionally (b) are iterated until the vertical etch feature has reached a desired depth. With each iteration of (a), the feature is vertical etched deeper into the one or more layers, while the amorphous carbon liner resists lateral etching of the sidewalls of the feature. With each optional iteration of (b), the deposited amorphous carbon liner on the sidewalls of the feature is replenished.

A method for depositing a carbon ashable hard mask layer on a substrate includes a) arranging a substrate in a processing chamber; b) setting chamber pressure in a predetermined pressure range; c) setting a substrate temperature in a predetermined temperature range from −20° C. to 200° C.; d) supplying a gas mixture including hydrocarbon precursor and one or more other gases; and e) striking plasma by supplying RF plasma power for a first predetermined period to deposit a carbon ashable hard mask layer on the substrate.

A method for providing a passivation layer or pH protective coating on a substrate surface by PECVD is provided, the method comprising generating a plasma from a gaseous reactant comprising polymerizing gases. The lubricity, passivation, pH protective, hydrophobicity, and/or barrier properties of the passivation layer or pH protective coating are set by setting the ratio of the O.sub.2 to the organosilicon precursor in the precursor feed, and/or by setting the electric power used for generating the plasma. In particular, a passivation layer or pH protective coating made by the method is provided. Pharmaceutical packages coated by the method and the use of such packages protecting composition contained in the vessel against mechanical and/or chemical effects of the surface of the package without a passivation layer or pH protective coating material are also provided.