A plasma processing apparatus includes a chamber having a space therein and configured to process a target object loaded into the space by plasma generated in the space; a gas supply unit configured to supply a processing gas into the space of the chamber; a high frequency antenna having a plurality of lines adjacent to each other and configured to generate the plasma in the space by an induced electric field generated in the space by a current flowing in the lines; and a plurality of holders configured to hold the lines of the high frequency antenna. The holders are arranged on the respective lines of the high frequency antenna such that the adjacent holders are spaced from each other by a gap of a predetermined distance or more.

Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises forming a plasma reaction between titanium tetrachloride (TlCl.sub.4), hydrogen (H.sub.2), and argon (Ar) in a region between a lid heater and a showerhead of a process chamber or the showerhead and a substrate while providing RF power at a pulse frequency of about 5 kHz to about 100 kHz and at a duty cycle of about 10% to about 20% and flowing reaction products into the process chamber to selectively form a titanium material layer upon a silicon surface of the substrate.

Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises forming a plasma reaction between titanium tetrachloride (TlCl.sub.4), hydrogen (H.sub.2), and argon (Ar) in a region between a lid heater and a showerhead of a process chamber or the showerhead and a substrate while providing RF power at a pulse frequency of about 5 kHz to about 100 kHz and at a duty cycle of about 10% to about 20% and flowing reaction products into the process chamber to selectively form a titanium material layer upon a silicon surface of the substrate.

The invention includes apparatus and methods for instantiating and quantum printing materials, such as elemental metals, in a nanoporous carbon powder.

The invention includes apparatus and methods for instantiating and quantum printing materials, such as elemental metals, in a nanoporous carbon powder.

The invention includes apparatus and methods for instantiating and quantum printing materials, such as elemental metals, in a nanoporous carbon powder.

A plasma reactor includes a chamber body having an interior space that provides a plasma chamber and having a ceiling, a gas distributor to deliver a processing gas to the plasma chamber, a pump coupled to the plasma chamber to evacuate the chamber, a workpiece support to hold a workpiece, and an intra-chamber electrode assembly. The intra-chamber electrode assembly includes an insulating frame, a first plurality of coplanar filaments that extend laterally through the plasma chamber between the ceiling and the workpiece support along a first direction, and a second plurality of coplanar filaments that extend in parallel through the plasma chamber along a second direction perpendicular to the first direction. Each filament of the first and second plurality of filaments includes a conductor at least partially surrounded by an insulating shell. A first RF power source supplies a first RF power to the conductor of the intra-chamber electrode assembly.

A plasma reactor includes a chamber body having an interior space that provides a plasma chamber and having a ceiling, a gas distributor to deliver a processing gas to the plasma chamber, a pump coupled to the plasma chamber to evacuate the chamber, a workpiece support to hold a workpiece, and an intra-chamber electrode assembly. The intra-chamber electrode assembly includes an insulating frame, a first plurality of coplanar filaments that extend laterally through the plasma chamber between the ceiling and the workpiece support along a first direction, and a second plurality of coplanar filaments that extend in parallel through the plasma chamber along a second direction perpendicular to the first direction. Each filament of the first and second plurality of filaments includes a conductor at least partially surrounded by an insulating shell. A first RF power source supplies a first RF power to the conductor of the intra-chamber electrode assembly.

A substrate processing system includes a first power source configured to supply plasma having a first power level, a second power source configured to supply plasma having a second power level greater than the first power level, and a controller configured to dose a process chamber with precursor. The first power level is sufficient to enhance adsorption of the precursor on a surface of a substrate and is insufficient to decompose the precursor that is adsorbed. The controller is further configured to remove a portion of the precursor that does not adsorb onto the substrate from the process chamber while the plasma having the first power level is being supplied and activate the precursor that is adsorbed using plasma having the second power level while the plasma having the first power level is still being supplied. The second power level is sufficient to decompose the precursor that is adsorbed.

A substrate processing system includes a first power source configured to supply plasma having a first power level, a second power source configured to supply plasma having a second power level greater than the first power level, and a controller configured to dose a process chamber with precursor. The first power level is sufficient to enhance adsorption of the precursor on a surface of a substrate and is insufficient to decompose the precursor that is adsorbed. The controller is further configured to remove a portion of the precursor that does not adsorb onto the substrate from the process chamber while the plasma having the first power level is being supplied and activate the precursor that is adsorbed using plasma having the second power level while the plasma having the first power level is still being supplied. The second power level is sufficient to decompose the precursor that is adsorbed.