A bevel mask for use in plasma CVD apparatus for depositing a more uniform film while preventing film peeling at the edges of the wafer. The bevel mask includes a bulk portion and an edge portion. The bulk portion includes an inner beveled surface or face, and the edge portion extends outward from a bottom section of the inner beveled surface to provide a covering for a peripheral portion of the upper surface of a wafer received on the susceptor, which supports the annular-shaped mask such as upon a ring structure on an upper surface of the susceptor.

A bevel mask for use in plasma CVD apparatus for depositing a more uniform film while preventing film peeling at the edges of the wafer. The bevel mask includes a bulk portion and an edge portion. The bulk portion includes an inner beveled surface or face, and the edge portion extends outward from a bottom section of the inner beveled surface to provide a covering for a peripheral portion of the upper surface of a wafer received on the susceptor, which supports the annular-shaped mask such as upon a ring structure on an upper surface of the susceptor.

An etch stop layer is formed over a semiconductor fin and gate stack. The etch stop layer is formed utilizing a series of pulses of precursor materials. A first pulse introduces a first precursor material to the semiconductor fin and gate stack. A second pulse introduces a second precursor material, which is turned into a plasma and then directed towards the semiconductor fin and gate stack in an anisotropic deposition process. As such, a thickness of the etch stop layer along a bottom surface is larger than a thickness of the etch stop layer along sidewalls.

A patterned backside stress compensation film having different stress in different sectors is formed on a backside of a substrate to reduce combination warpage of the substrate. The film can be formed by employing a radio frequency electrode assembly including plurality of conductive plates that are biased with different RF power and cause local variations in the plasma employed to deposit the backside film. Alternatively, the film may be deposited with uniform stress, and some of its sectors are irradiated with ultraviolet radiation to change the stress of these irradiated sectors. Yet alternatively, multiple backside deposition processes may be sequentially employed to deposit different backside films to provide a composite backside film having different stresses in different sectors.

A patterned backside stress compensation film having different stress in different sectors is formed on a backside of a substrate to reduce combination warpage of the substrate. The film can be formed by employing a radio frequency electrode assembly including plurality of conductive plates that are biased with different RF power and cause local variations in the plasma employed to deposit the backside film. Alternatively, the film may be deposited with uniform stress, and some of its sectors are irradiated with ultraviolet radiation to change the stress of these irradiated sectors. Yet alternatively, multiple backside deposition processes may be sequentially employed to deposit different backside films to provide a composite backside film having different stresses in different sectors.

The disclosure provides an apparatus for depositing poly(p-xylylene) onto a component. The apparatus comprises a deposition chamber configured to receive a component to be coated therein; an electrical power supply; a platen, disposed inside the deposition chamber and comprising an electrically conductive material, wherein the platen is electrically connected to the electrical power supply and configured to support the component; a monomer reservoir, configured to receive a monomer of poly(p-xylylene) therein; a monomer conduit extending between the monomer reservoir and the deposition chamber; and a heating means configured to heat the monomer reservoir and the monomer conduit to a temperature of between 25 and 250° C.

Methods for depositing a dielectric material using RF bias pulses along with remote plasma source deposition for manufacturing semiconductor devices, particularly for filling openings with high aspect ratios in semiconductor applications are provided. For example, a method of depositing a dielectric material includes providing a gas mixture into a processing chamber having a substrate disposed therein, forming a remote plasma in a remote plasma source and delivering the remote plasma to an interior processing region defined in the processing chamber, applying a RF bias power to the processing chamber in pulsed mode, and forming a dielectric material in an opening defined in a material layer disposed on the substrate in the presence of the gas mixture and the remote plasma.

Methods for depositing a dielectric material using RF bias pulses along with remote plasma source deposition for manufacturing semiconductor devices, particularly for filling openings with high aspect ratios in semiconductor applications are provided. For example, a method of depositing a dielectric material includes providing a gas mixture into a processing chamber having a substrate disposed therein, forming a remote plasma in a remote plasma source and delivering the remote plasma to an interior processing region defined in the processing chamber, applying a RF bias power to the processing chamber in pulsed mode, and forming a dielectric material in an opening defined in a material layer disposed on the substrate in the presence of the gas mixture and the remote plasma.

A fabrication system for fabricating an IC is provided which includes a processing tool, a computation device and a FDC system. The processing tool includes an electrode and an RF sensor to execute a semiconductor manufacturing process to fabricate the IC. The RF sensor wirelessly detects the intensity of the RF signal. The computation device extracts statistical characteristics based on the detection of the intensity of the RF signal. The FDC system determines whether or not the intensity of the RF signal meets a threshold value or a threshold range according to the extracted statistical characteristics. When the detected intensity of the RF signal exceeds the threshold value or the threshold range, the FDC system notifies the processing tool to adjust the RF signal or stop tool to check parts damage.

The present disclosure is directed to a showerhead for distributing plasma. The showerhead includes a perforated tile coupled to a support structure. A dielectric window is disposed over the perforated tile. An electrode is coupled to the dielectric window. An inductive coupler is disposed over the dielectric window. At least a portion of the inductive coupler is angled relative to at least a portion of the electrode.