The present invention relates to a high heat-resistant/oxidation-resistant/flame retardant-non-flammable liquid ceramic coating film for protecting an exterior of an apparatus in an extreme environment. Provided are a method of forming a high heat-resistant coating film including: (a) preparing a liquid ceramic filling agent by mixing a ceramic filler including iron (III) oxide (Fe.sub.3O.sub.4) powder, a diluent, and an inorganic nanosol; (b) applying the liquid ceramic filling agent to at least one surface of a substrate to form a coating film; and (c) curing the coating film by drying the substrate, and a high heat-resistant coating film prepared thereby.

Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.

A support member for a thermal processing chamber is described. The support member has a sol coating on at least one surface. The sol coating contains a material that blocks a desired wavelength or spectrum of radiation from being transmitted by the material of the support member. The sol coating may be a multi-layer structure that may include adhesion layers, transition layers, and cap layers, in addition to radiation-blocking layers.

The present disclosure provides a solution for a metal oxide semiconductor thin film, including metal hydroxides dissolved in an aqueous or nonaqueous solvent and an acid/base titrant for controlling solubility of metal hydroxides. A solution is synthesized to improve stability and semiconductive performance of a device through addition of other metal hydroxides. The solution is applied on a substrate and annealed by using various annealing apparatuses to obtain a high-quality metal oxide thin film at low temperatures. The thin film is optically transparent, and thus can be applied to thin films for various electronic devices, solar cells, various sensors, memory devices, and the like.

Methods of manufacture of an optical diffuser. In one embodiment, an optical diffuser is formed by providing a wafer including a silicon slice of which an upper face is covered with a first layer made of a first material itself covered with a second layer made of a second selectively etchable material with respect to the first material. The method further includes forming openings in the second layer extending up to the first layer and filling the openings in the second layer with a third material. The method yet further includes bonding a glass substrate to the wafer on the side of its upper face and removing the silicon slice.

There is described a process for depositing carbon on a surface, comprising, while contacting a mixture of CO.sub.2 and Br.sub.2 with a polar substrate presenting apposed surfaces, exposing a sufficient area of said mixture in the region of said apposed surfaces to light of sufficient intensity and frequency to result in deposition of carbon on at least some of said apposed surfaces. Other embodiments are also described.

A support member for a thermal processing chamber is described. The support member has a sol coating on at least one surface. The sol coating contains a material that blocks a desired wavelength or spectrum of radiation from being transmitted by the material of the support member. The sol coating may be a multi-layer structure that may include adhesion layers, transition layers, and cap layers, in addition to radiation-blocking layers.

The present invention provides a method for forming a siliceous film. According to the method, a siliceous film having a hydrophilic surface can be formed from a polysilazane compound at a low temperature. In the method, a composition containing a polysilazane compound and a silica-conversion reaction accelerator is applied on a substrate surface to form a polysilazane film, and then a polysilazane film-treatment solution is applied thereon so that the polysilazane compound can be converted into a siliceous film at 300 C. or less. The polysilazane film-treatment solution contains a solvent, hydrogen peroxide and an alcohol.

Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.

There is described a process for depositing carbon on a surface, comprising, while contacting a mixture of CO.sub.2 and Br.sub.2 with a polar substrate presenting apposed surfaces, exposing a sufficient area of said mixture in the region of said apposed surfaces to light of sufficient intensity and frequency to result in deposition of carbon on at least some of said apposed surfaces. Other embodiments are also described.