Provided are a composition for forming a silica layer including a silicon-containing polymer and a solvent, wherein when adding 70 g of the composition for forming the silica layer to a 100 ml container, leaving it at 40 C. for 28 days, and taking 1 ml of gas generated from the composition, 1 ml of the gas includes hydrogen gas (H.sub.2), silane gas (SiH.sub.4), and ammonia gas (NH.sub.3), and the hydrogen gas, silane gas, and ammonia gas satisfy Equation 1: [(hydrogen gas amount (ppm))/(silane gas amount (ppm)+ammonia gas amount (ppm))1.5], a silica layer manufactured therefrom, and an electronic device including the silica layer.

Embodiments of the present disclosure relates generally to methods of providing biomimetic superhydrophobic coatings to substrates, and more specifically to providing biomimetic inorganic silica or silane-based coatings that enable tunable hierarchical surface structures with high coating-to-substrate adhesion, resistance to various mechanical abradents, durability, shelf stability, and enhanced non-wettability or water-repellency.

The coated glass sheet of the present invention includes: a glass sheet; and a coating film provided on at least one principal surface of the glass sheet. The coating film includes a dense layer and a porous layer. The dense layer is positioned between the porous layer and the glass sheet.

A magnesium alloy layered composite for an electronic device can include a magnesium alloy substrate, a passivation layer positioned on the magnesium alloy substrate, and a sol-gel layer positioned on the passivation layer. The passivation layer can include a molybdate, a vanadate, a phosphate, a chromate, a stannate, or a manganese salt. The sol-gel layer can include a silicate, a silane, a siloxane, or a metal C1-C5 alkoxide.

Described herein are methods for coating a substrate with a photocatalytic compound, and photocatalytic elements prepared by these methods.

The present invention relates in part to a method of fabricating a ceramic-polymer composite by contacting a polymer material with an acid solution and depositing a ceramic on the polymer material. The invention also relates in part to ceramic-polymer composites produced using said method and ballistic resistant materials comprising said ceramic-polymer composites.

A casting component and method for the application of an anticorrosive layer to a substrate, such as the casting component, are provided. The casting component for a device for casting a metal melt includes a metallic basic body and a melt contact surface region which is exposed to the metal melt during casting operation. In the casting component, the metallic basic body is provided in the melt contact surface region with an anticorrosive layer which is resistant to the metal melt and which is formed, using microparticles and/or nanoparticles of one or more substances from a substance group which includes borides, nitrides and carbides of the transition metals and their alloys and also of boron and silicon and Al.sub.2O.sub.3.

Solid or liquid NH free, C-free, and Si-rich perhydropolysilazane compositions comprising units having the following formula [N(SiH.sub.3).sub.x(SiH.sub.2).sub.y], wherein x=0, 1, or 2 and y=0, 1, or 2 when x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 when x+y=3 are disclosed. Also disclosed are synthesis methods and applications for the same.

An aqueous composition for use in activating surface of polymers.

A method for fabricating a connected network of oxide-coated semiconductor structure, comprising: preparing a first solution comprising a nanocrystalline material and a first solvent; preparing a second solution comprising a surfactant and a second solvent; adding the first solution and a bifunctional linker to the second solution, thereby preparing a third solution; adding a catalyst, water and a silicate to the third solution; thereby preparing a connected network of oxide-coated semiconductor structure; wherein the ratio of the water to surfactant is more than 3.5. Furthermore, an oxide-coated semiconductor structure and a light source comprising an oxide-coated semiconductor structure are described herein.