Subjecting an aluminum or aluminum alloy substrate to anti-corrosion and anti-wear treatment that is applicable in particular in the field of aviation for protecting certain mechanical parts of airplanes or helicopters that are subjected simultaneously to corrosion and to wear, including applying to the substrate, a sol-gel treatment step forming a sol-gel layer; and after the sol-gel treatment step, a hard oxidation step forming a hard oxide layer.

A material deposition method comprising: preparing a precursor solution of Pb(Zr.sub.x,Ti.sub.1-x)O.sub.3 using 1-methoxy-2-propanol as a solvent and acetylacetone as a modifier; and forming a seed layer for a electroactive film by spin coating the precursor solution on a substrate. The electroactive film can be PZT, PZO or BFO, spin-coated or inkjet printed on the seed layer. Experience shows pure orientation for the piezoelectric film thanks to the use of 1-methoxy-2-propanol when preparing the seed layer. This orientation is attributed to the formation of nano crystals on the seed layer constituting a pre-crystallization.

A method of making a carbon nanotube composite hydrogen evolution catalytic film is provided. The method includes: providing a carbon nanotube film, wherein the carbon nanotube film defines a plurality of spaced holes; providing a precursor solution containing a molybdenum source and a carbon source, and placing the precursor solution on the carbon nanotube film and drying to obtain a precursor film; and energizing the precursor film.

Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.

Methods of processing a capacitor device with high energy density and high extraction efficiency based on sol-gel films. The films can be formed by use of a single precursor, including siloxane precursors bearing a polar group on a flexible tethering group. The sol-gel compositions used in the formation of films can have high dielectric permittivity, low dielectric loss, high breakdown strength and high-energy storage properties. The methods can be well suited for both high energy density and high power density to provide enhanced energy storage capabilities for discrete, embedded or on-chip integrated capacitor applications, gate dielectrics for transistors and displays, capacitive touch screens, light weight mobile defibrillators, filters for cellular devices, electric propulsion, electric vehicles, power invertors for microgrid storage, load leveling of transients on a wide range of timescales for medium voltage electric grids.

The present invention relates to a photoelectric film and a fabrication method thereof, and in particular, to a layered polycrystalline lead selenide (PbSe) film and a fabrication method thereof. The fabrication method mainly includes: (1) fabricating a dense PbSe layer on a substrate through chemical bath deposition (CBD); (2) fabricating a loose plumbonacrite (Pb.sub.10O(OH).sub.6(CO.sub.3).sub.6) layer on the dense PbSe layer through CBD; (3) placing a sample with the dense PbSe layer and the Pb.sub.10O(OH).sub.6(CO.sub.3).sub.6 layer in a selenium ion-containing solution to allow an ion exchange reaction to finally form the layered polycrystalline PbSe film. The fabrication method has the advantages of simple process, low cost, and high controllability. The PbSe film fabricated by the method is composed of a lower dense polycrystalline cubic PbSe layer and an upper loose polycrystalline cubic PbSe layer, which can be widely used in the fabrication of components in the field of photoelectric conversion or thermoelectric conversion, such as infrared (IR) sensors, solar cells, laser emitters, and thermoelectric converters.

The plasma-resistant coating film according to the present invention is formed on a substrate, including crystalline Y.sub.2O.sub.3 particles having an average particle diameter of 0.5 μm to 5.0 μm in a SiO.sub.2 film, in which a film density of the plasma-resistant coating film is 90% or more, the film density being obtained by performing image analysis of a cross section of the film with an electron scanning microscope and by using the following expression (1), a size of pores in the film is 5 μm or less in terms of diameter, and a peeling rate of the film from the substrate measured by performing a cross-cut test is 5% or less. Film density (%)=[(S.sub.1−S.sub.2)/S.sub.1]×100 (1). However, in the expression (1), S.sub.1 is an area of the film and S.sub.2 is an area of a pore portion in the film.

A method of manufacturing transition metal chalcogenide thin films, includes the operations of forming a transition metal chalcogenides precursor on a substrate, and irradiating light onto the transition metal chalcogenides precursor. The transition metal chalcogenides precursor includes an amine-based ligand.

Embodiments of the present disclosure relates generally to methods of providing biomimetic superhydrophobic coatings to substrates, and more specifically to providing biomimetic inorganic silica or silane-based coatings that enable tunable hierarchical surface structures with high coating-to-substrate adhesion, resistance to various mechanical abradents, durability, shelf stability, and enhanced non-wettability or water-repellency.

A method for selectively metallizing a surface of a ceramic substrate, a ceramic product and use of the ceramic product are provided. The method comprises steps of: A) molding and sintering a ceramic composition to obtain the ceramic substrate, in which the ceramic composition comprises a ceramic powder and a functional powder dispersed in the ceramic powder; the ceramic powder is at least one selected from a group consisting of an oxide of E, a nitride of E, a oxynitride of E, and a carbide of E; E at least one selected from a group consisting of Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, B, Al, Ga, Si, Ge, P, As, Sc, Y, Zr, Hf, is and lanthanide elements; the functional powder is at least one selected from a group consisting of an oxide of M, a nitride of M, a oxynitride of M, a carbide of M, and a simple substance of M; and M is at least one selected from a group consisting of Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Ta, W, Re, Os, Ir, Pt, Au, In, Sn, Sb, Pb, Bi, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu; B) radiating a predetermined region of the surface of the ceramic substrate using an energy beam to form a chemical plating active center on the predetermined region of the surface of the ceramic substrate; and C) performing chemical plating on the ceramic substrate formed with the chemical plating active center to form a metal layer on the predetermined region of the surface of the ceramic substrate.