A film forming method of forming a film on a substrate includes: annealing the substrate; and supplying mist of a raw material solution of the film to a surface of the substrate after the annealing while heating the substrate at a temperature lower than a temperature of the substrate during the annealing.

The present disclosure relates to tungsten bronze thin films and method of making the same. Specifically, the present disclosure relates to a thin, homogeneous, highly conducting cubic tungsten bronze film with densely packed micron size particles and the process of making the film.

A method for forming a light extraction layer including nanostructures, the method including: providing a substrate, the substrate being at least partially transparent to UV light; forming a non-aqueous precursor solution comprising fluorine and an alkaline earth metal to form alkaline earth metal difluoride particles; applying the precursor solution on at least a first side of the substrate; drying the substrate at a first temperature for a first period of time; and baking the substrate at a second temperature, higher than the first temperature, for a second period of time, thereby forming a light extraction nanostructure layer comprising alkaline earth metal difluoride nanostructures on the substrate. Also, a light extraction structure and to a UV lamp including such an extraction structure.

The present invention relates to a composition comprising; components a. c. and d; and optional component b. wherein, component a. is a metal compound having the structure (I), optional component b., is a polyol additive, having structure (VI), component c. is a high performance polymer additive, and component d. is a solvent. The present invention further relates to using this compositions in methods for manufacturing electronic devices through either the formation of a patterned films of high K material comprised of a metal oxide on a semiconductor substrate, or through the formation of patterned metal oxide comprised layer overlaying a semiconductor substrate which may be used to selectively etch the semiconductor substrate with a fluorine plasma.

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A process for depositing a coating on short fibres of carbon or silicon carbide from a coating precursor, the short fibres having a length of between 50 m and 5 mm, the process including at least heating the short fibres by placing a mixture including the fibres and a liquid phase of the coating precursor in a microwave field so as to bring the surface of the fibres to a temperature allowing the coating on the fibres from the coating precursor to be formed by calefaction.

This disclosure relates to basic inorganic compositions. Methods of providing antifungal/antibacterial resistance and/or hydrophobicity and/or corrosion resistance by coating surfaces with the basic inorganic compositions are provided. In another aspect, a silicate composition comprising at least one alkali earth metal; and a Group IV element of silicon, germanium, tin, or lead having at least one hydrocarbon moiety covalently bonded thereto is provided.

A solution deposition method includes: applying a liquid precursor solution to a substrate, the precursor solution including an oxide of a first metal, a hydroxide of the first metal, or a combination thereof, dissolved in an aqueous ammonia solution; evaporating the precursor solution to directly form a solid seed layer on the substrate, the seed layer including an oxide of the first metal, a hydroxide of the first metal, or a combination thereof, the seed layer being substantially free of organic compounds; and growing a bulk layer on the substrate, using the seed layer as a growth site or a nucleation site.

A method for manufacturing metal oxide-grown carbon fibers including immersing carbon fibers in a solution for forming a metal oxide seed layer and electrodepositing a metal oxide seed on the surfaces of carbon fibers, or irradiating microwave thereto to form a metal oxide seed layer, and irradiating microwave to the metal oxide seed layer-formed carbon fibers to grow metal oxide. The method for manufacturing metal oxide-grown carbon fibers can reduce process time, and improve process energy efficiency and production efficiency. The method for manufacturing metal oxide-grown carbon fibers can offer metal oxide-grown carbon fibers with improved interfacial shear stress.

The present invention relates to a method for producing silicon carbide-containing fibers or silicon carbide-containing nano- and/or micro-structured foams, and to the use thereof, in particular as anode materials for lithium-ion storage batteries.

The disclosure relates to a method for forming a conformal coating on a substrate having a topography presenting a relief. One method of the disclosure includes setting the temperature of the substrate within the range 140-275 C., and coating an aqueous solution including a sol-gel precursor on said substrate. The disclosure also relates to a method for fabricating a battery, a capacitor, a catalyst, a photovoltaic cell or a sensor using such a method, and to an aqueous solution for use in such a method.