In a method for producing a metal oxide film according to the present invention, a solution containing zinc is sprayed onto a substrate placed under non-vacuum, and then, a dopant solution containing a dopant is sprayed onto the substrate. After that, a deposited metal oxide film is subjected to a resistance reducing treatment. A molar concentration of the dopant supplied to the substrate with respect to a molar concentration of the zinc supplied to the substrate is not less than a predetermined value.

A film forming method of forming a film on a substrate includes: annealing the substrate; and supplying mist of a raw material solution of the film to a surface of the substrate after the annealing while heating the substrate at a temperature lower than a temperature of the substrate during the annealing.

An optical system includes a housing, an imaging device housed within the housing, and a window in the housing providing an optical path through the housing to the imaging device. The window includes a transparent substrate and a coating over the transparent substrate. The coating is made of an electrically conductive semiconductor. The imaging device is sensitive to and the coating is transparent to at least one of MWIR and/or LWIR wavelengths.

A process for producing a metal oxide film comprising: providing a precursor solution or dispersion containing a metal complex; spraying the precursor solution on to a heated substrate in the presence of water, thereby depositing material on the substrate; and drying the deposited material, thereby producing the metal oxide film.

The present invention lies in the fields of chemistry and materials engineering. More specifically, the present invention describes a process of heat treatment of polymeric precursors including as active phases particle charge or a mixture of active phases with inert phases called fillers. It is also described a surface including ceramic polymer obtained by said process. The volumetric positive variation resulting from the formation of new phases, which for their formation, incorporate atoms from the gaseous phase, contributes to a minor shrinkage of the composition during the heat treatment process. The process of the present invention allows obtaining the desired phases in smaller treatment times and lower temperatures, when compared to a thermal treatment process as conventional pyrolysis (PC) due to the presence of highly reactive species, as for example atomic nitrogen produced by the dissociation of nitrogen molecules in the plasma environment.

A heterojunction anode for electrolysis is disclosed. The anode has a first conductive metal oxide (FCMO) layer, a second semiconductor layer contacting the FCMO layer, and one or more islands of a third semiconductor contacting the second semiconductor layer. The FCMO layer may be formed on a metallic base, such as titanium. The FCMO layer may include iridium, the second semiconductor layer may include titanium oxide, and the third semiconductor may include tin oxide. The anode may be manufactured using spray pyrolysis to apply each semiconductor material. The anode may be configured such that when placed in an electrolyte at least a portion of the second semiconductor layer and the islands are in direct physical contact with the electrolyte. The second semiconductor interlayer and third semiconductor islands enhance the production of reactive chlorine in chlorinated water. A water treatment system and method using the anode are also disclosed.

Provided is a culinary item, one surface of which is provided with a coating including at least one rare-earth oxide layer. Such a coating has the specific feature of not only having mechanical hardness and abrasion resistance comparable to those of enamels and ceramics, but also excellent intrinsic hydrophobic properties that enable the coating obtained to have a non-stick property that is comparable to that of fluorocarbon coatings and suitable for culinary applications.

An apparatus and a non-vapor-pressure dependent method of chemical vapor deposition of Si based materials using direct injection of liquid hydrosilane(s) are presented. Liquid silane precursor solutions may also include metal, non-metal or metalloid dopants, nanomaterials and solvents. An illustrative apparatus has a precursor solution and carrier gas system, atomizer and deposit head with interior chamber and a hot plate supporting the substrate. Atomized liquid silane precursor solutions and carrier gas moves through a confined reaction zone that may be heated and the aerosol and vapor are deposited on a substrate to form a thin film. The substrate may be heated prior to deposition. The deposited film may be processed further with thermal or laser processing.

A heterojunction anode for electrolysis is disclosed. The anode has a first conductive metal oxide (FCMO) layer, a second semiconductor layer contacting the FCMO layer, and one or more islands of a third semiconductor contacting the second semiconductor layer. The FCMO layer may be formed on a metallic base, such as titanium. The FCMO layer may include iridium, the second semiconductor layer may include titanium oxide, and the third semiconductor may include tin oxide. The anode may be manufactured using spray pyrolysis to apply each semiconductor material. The anode may be configured such that when placed in an electrolyte at least a portion of the second semiconductor layer and the islands are in direct physical contact with the electrolyte. The second semiconductor interlayer and third semiconductor islands enhance the production of reactive chlorine in chlorinated water. A water treatment system and method using the anode are also disclosed.

A method for making a lithium salt film includes heating a substrate, spraying a mixture with a spray nozzle onto the substrate to form a precursor film, and annealing the precursor film to form the lithium salt film. The lithium salt film has a thickness of about 400 nm to about 100 pm. The spray mixture includes a first precursor comprising a lithium ion, a second precursor comprising an anion, and a solvent.