The present application provides an anti-corrosion super-slippery aluminum capillary tube and method and device for preparing the same. The preparation starts with the etching and drying of the inner walls of an aluminum capillary tube, which leads to the formation of an alumina capillary structure surface with micro-nano scale roughness. Next, the alumina capillary structure surface is modified to form a low surface energy modifying layer. Finally, the modified alumina capillary structure surface is wetted by a prewetting solution, so that a continuous film of the prewetting solution is formed on the inner wall of the aluminum capillary tube to function as a lubricating layer. The lubrication layer, on one hand, reduces the flow resistance for convey of liquid media, on the other hand, prevents the conveyed liquids from directly contacting the aluminum capillary tube body, thereby avoiding the corrosion of the aluminum capillary tube by corrosive liquids.

A hybrid halide perovskite film and methods of forming a hybrid halide perovskite film on a substrate are described. The film is formed on the substrate by depositing an organic solution on a substrate, heating the substrate and the organic solution to form an organic layer on the substrate, depositing an inorganic layer on the organic layer, and heating the substrate having the inorganic layer thereon to form a hybrid halide perovskite film. In some embodiments, the hybrid halide perovskite film comprises a CH[NH.sub.2].sub.2.sup.+MX.sub.3 compound, where M is selected from the group consisting of Sn, Pb, Bi, Mg and Mn, and where X is selected from the group consisting of I, Br and Cl. In other embodiments, the hybrid halide perovskite film comprises a FAMX.sub.3 compound. Methods of forming a piezoelectric device are also disclosed.

A method for forming a metal film includes forming an oxide layer on a to-be-treated surface of a to-be-treated object by bringing the to-be-treated surface into contact with a reaction solution containing fluorine and an oxide precursor, removing fluorine in the oxide layer, supporting a catalyst on the oxide layer by bringing the oxide layer into contact with a catalyst solution, and depositing a metal film on the oxide layer by bringing the oxide layer into contact with an electroless plating liquid.

A perovskite film, method of preparing thereof, and an optoelectronic device are provided. They are prepared by steps including preparing a mixture containing a first monomer and a second monomer which can be crosslinked in situ; performing an annealing process, and the first monomer and the second monomer are reacted in situ to form a first polymer which combines with the perovskite crystal grains formed by the perovskite precursor and is concentrated at a crystal grain boundary of the perovskite crystal grains to passivate the perovskite crystal grain defects, and then a perovskite film is formed by curing.

The present invention relates to a multilayer coating on a metal substrate comprising (a) A first distinct layer of a first sol-gel composition disposed over the substrate, wherein the first distinct layer comprises an inorganic oxide, (b) a second distinct layer of a second sol-gel composition disposed over the first distinct layer, wherein the second distinct layer comprises silica and ceria, and (c) a third distinct layer of a third sol-gel composition disposed over the third distinct layer, wherein the third distinct layer comprises at least one alkoxysilane and the process for the preparation of thereof.

A coating agent for forming an oxide film; a method for producing an oxide film; and a method for producing a metal-plated structure, where the stability of the coating agent can be enhanced, and an oxide film which can be plated and has high adhesion to a substrate can be easily formed. The coating agent for forming an oxide film is a liquid coating agent, essentially contains titanium atoms, and optionally contains silicon atoms and copper atoms, wherein the ratio of the sum of the titanium atoms and copper atoms to the silicon atoms is 1:0-3:2. The method for producing an oxide film includes applying the coating agent to a substrate and heating to form an oxide film. The method for producing a metal-plated structure includes: a metal-film-forming step for forming a metal film on the oxide film; and a baking step for baking the metal film.

The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 μm to about 1.0 μm to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 μm to about 20.0 μm and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 μm to about 20.0 μm.

A compound structure and a forming method thereof are provided. The method of forming a compound structure according to embodiments of the present invention comprises loading a metal precursor on a substrate, providing a chalcogen precursor to the substrate, and reacting the chalcogen precursor with the metal precursor. The compound structure according to embodiments of the present invention is formed by the method and has a 2-dimensional structure.

Provided is an electrically heated catalytic converter including at least a conductive substrate and an electrode member that is fixed to the substrate, in which a protective film is formed on a surface of at least a portion of the electrode member. In the electrically heated catalytic converter, at least a portion of the protective film is formed of Al.sub.2O.sub.3, SiO.sub.2, a composite material of Al.sub.2O.sub.3 and SiO.sub.2, or a composite oxide including Al.sub.2O.sub.3, SiO.sub.2, or a composite material of Al.sub.2O.sub.3 and SiO.sub.2 as a major component, the protective film has an amorphous structure or a partially crystalline glass structure having a crystallization rate of 30 vol % or lower with respect to the entire portion of the protective film, and a thickness of the protective film is in a range of 100 nm to 2 μm.

A method of manufacturing a ferroelectric element includes forming an insulating film on one side of a metal substrate by an electron beam (EB) vapor deposition method or a sputtering method; forming a metal film on the insulating film by the sputtering method; and forming a ferroelectric film on the metal film by a sol-gel method. The metal substrate includes iron (Fe) and nickel (Ni), and a content of the nickel (Ni) is greater than or equal to 30% and less than or equal to 40%.