The present invention relates to an alkaline aqueous composition on the basis of water glass and organosilanes with non-hydrolysable substituents which have a primary amino group in the substituents, for providing corrosion-protected coatings on metal surfaces which convey good reshaping properties in metal processing. For the desired functionality, the compositions according to the invention contain the organosilane and the water glass in a predetermined ration. The invention further relates to a method for pre-treating metal surfaces using the alkaline aqueous compositions, which method provides excellent results with regard to corrosion protection, varnish adhesion and reshapability, particularly on aluminum and on steel strips provided with aluminum alloy metal coatings.

Implementations described herein generally relate to materials and coatings, and more specifically to materials and coatings for aluminum and aluminum-containing chamber components. In one implementation, a process is provided. The process comprises exposing an aluminum-containing component to a moisture thermal treatment process and exposing the aluminum-containing component to a thermal treatment process. The moisture thermal treatment process comprises exposing the aluminum-containing component to an environment having a moisture content from about 30% to about 100% at a first temperature from about 30 to about 100 degrees Celsius. The thermal treatment process comprises heating the aluminum-containing component to a second temperature from about 200 degrees Celsius to about 550 degrees Celsius to form an alumina layer on the at least one surface of the aluminum-containing component.

A coating for spark plugs and engine parts is resistant to fouling. The coating may be applied to the spark plug or engine part by dipping the part in a sol gel solution, ensuring it wets the part, and extracting it at a slow, controlled rate. As the part is allowed to dry, the sol gel reacts with moisture in the air to form a thin oxide film. Unlike conventional sol gel applications, which apply the oxide directly to the part, the present invention may form an oxide coating, in situ, while drying in place on the part.

The present invention is directed to process for preparing a device comprising a first layer and a first electrode, the method comprising forming the first layer over a first electrode by applying a liquid anhydrous composition comprising at least one metal oxo alkoxide and at least one solvent, onto a surface, the surface being selected from the surface of the first electrode or the surface of a layer being located over the first electrode, optionally drying the composition, and converting the composition to a metal oxide-containing first layer, and forming a second electrode over the first device layer, wherein the method further includes forming a layer comprising quantum dots over the first electrode before or after the formation of the first layer and to the device itself.

A copper foil, intended for use as a current collector in a lithium-containing electrode for a lithium-based electrochemical cell, is subjected to a series of chemical oxidation and reduction processing steps to form a field of integral copper wires extending outwardly from the surfaces of the current collector (and from the copper content of the foil) to be coated with a resin-bonded porous layer of particles of active electrode material. The copper wires serve to anchor thicker layers of porous electrode material and enhance liquid electrolyte contact with the electrode particles and the current collector to improve the energy output of the cell and its useful life.

The present disclosure provides a precursor solution of an indium gallium zinc oxide film and a method of preparing an indium gallium zinc oxide thin film transistor. The precursor solution is provided with an indium salt, a gallium salt, a zinc salt, a stabilizing agent, and a solvent. The stabilizing agent is ethanolamine. Use of ethanolamine helps to promote an oxidation process of the precursor solution, and reduce an oxygen vacancy concentration in the indium gallium zinc oxide film, so as to improve negative bias of a threshold voltage of a channel layer made of the indium gallium zinc oxide film in a thin film transistor.

A ferroelectric device comprising a substrate; a textured layer; a first electrode comprising a thin layer of metallic material having a crystal lattice structure divided into granular regions; a seed layer; the seed layer being epitaxially deposited so as to form a column-like structure on top of the granular regions of the first electrode; at least one ferroelectric material layer exhibiting spontaneous polarization epitaxially deposited on the seed layer; the ferroelectric material layer, the seed layer, and first electrode each having granular regions in which column-like structures produce a high degree of polarization normal to the growth plane and a method of making.

Solid or liquid N—H free, C-free, and Si-rich perhydropolysilazane compositions comprising units having the following formula [—N(SiH.sub.3).sub.x(SiH.sub.2—).sub.y], wherein x=0, 1, or 2 and y=0, 1, or 2 when x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 when x+y=3 are disclosed. Also disclosed are synthesis methods and applications for the same.

Provided is a barrier film comprising a base layer, and an inorganic layer including Si, N, and O, and including a first region and a second region, which have different elemental contents (atomic %) of Si, N, and O from each other as measured by XPS, wherein the film has a water vapor transmission rate of 5.0×10.sup.−4 g/m.sup.2.Math.day or less as measured under conditions of a temperature of 38° C. and 100% relative humidity after being stored at 85° C. and 85% relative humidity conditions for 250 hours, or wherein the inorganic layer has a compactness expressed through an etching rate of 0.17 nm/s in the thickness direction for an Ar ion etching condition to etch Ta.sub.2O.sub.5 at a rate of 0.09 nm/s. The barrier film has excellent barrier properties and optical properties and can be used for electronic products that are sensitive to moisture and the like.

Forming a lithium lanthanum zirconate thin film includes disposing zirconium oxide on a substrate to yield a zirconium oxide coating, contacting the zirconium oxide coating with a solution including a lithium salt and a lanthanum salt, heating the substrate to yield a dried salt coating on the zirconium oxide coating, melting the dried salt coating to yield a molten salt mixture, reacting the molten salt mixture with the zirconium oxide coating to yield lithium lanthanum zirconate, and cooling the lithium lanthanum zirconate to yield a lithium lanthanum zirconate coating on the substrate. In some cases, the zirconium oxide coating is contacted with an aqueous molten salt mixture including a lithium salt and a lanthanum salt, the molten salt mixture is reacted with the zirconium oxide coating to yield lithium lanthanum zirconate, and the lithium lanthanum zirconate is cooled to yield a lithium lanthanum zirconate coating on the substrate.