The invention relates to a noble metal complex comprising diolefin and C6-C18 monocarboxylate ligands of the type [LPd[O(CO)R1]X].sub.n, [LRh[O(CO)R1]].sub.m or [LIr[O(CO)R1]].sub.m, in which L represents a compound acting as a diolefin ligand, wherein X is selected from bromide, chloride, iodide and —O(CO)R2, wherein —O(CO)R1 and —O(CO)R2 represent identical or different non-aromatic C6-C18 monocarboxylic acid residues, in each case with the exception of a phenylacetic acid residue, and wherein n is an integer ≥1 and m is an integer ≥2.

A preparation containing: (A) 30 to 90 wt. % of at least one organic solvent, (B) 10 to 70 wt. % of at least one noble metal complex comprising diolefin and C6-C18 monocarboxylate ligands selected from the group consisting of noble metal complexes of the type [LPd[O(CO)R1]X].sub.n, [LRh[O(CO)R1]].sub.m, and [LIr[O(CO)R1]].sub.m, wherein L represents a compound acting as diolefin ligand, wherein X is selected among bromide, chloride, iodide, and —O(CO)R2, wherein —O(CO)R1 and —O(CO)R2 represent identical or different non-aromatic C6-C18 monocarboxylic acid residues, and wherein n is an integral number 1, and m is an integral number 2, and (C) 0 to 10 wt. % of at least one additive.

A display panel and a fabricating method thereof are provided. The fabricating method of the display panel has steps of: providing a substrate; forming a light conversion layer on the substrate, wherein material of the light conversion layer has a perovskite structural material with a chemical formula of ABX.sub.3, wherein A represents an inorganic element, B represents an inorganic element, and X represents a halogen; performing a patterning step on the light conversion layer by an antisolvent method, wherein the light conversion layer forms a plurality of light conversion patterns; and forming a pixel layer on the light conversion layer, wherein the pixel layer has a plurality of pixel units, and the plurality of pixel units are respectively aligned with the plurality of light conversion patterns. The fabricating method can reduce a dark state brightness of the display panel, thereby improving contrast of the display panel.

Porous, binderless ceramic surface modification materials are described, and applications of use thereof. The ceramic material may include a metal oxide and/or metal hydroxide, and/or hydrates thereof, on a substrate surface.

In some examples, a method including applying a wet bond coat slurry to a damaged area of a coating system on a metal substrate, the bond coat slurry including a liquid binder, glass and/or glass-ceramic particles, and ceramic oxide particles; depositing fibers onto the wet bond coat slurry, wherein the fibers include metallic and/or ceramic fibers; applying a ceramic composite slurry on the bond coat while the bond coat is wet or at least partially dried to form a ceramic composite layer, the bond coat including a plurality of partially exposed fibers, wherein, following the application of the ceramic composite slurry, a first portion of fibers of the plurality of fibers are embedded in the bond coat and a second portion of fibers of the plurality of fibers extend into the layer of the ceramic composite slurry; and heating the bond coat and the ceramic composite layer to form a repaired portion of the coating system on the metal substrate, wherein heating the bond coat melts the glass particles and/or the glass-ceramic particles to form a fully amorphous glass phase or a mixture of amorphous and crystalline glass phases which bond with the metal substrate.

An electrode for gas evolution in electrolytic processes and a method for the production of such an electrode, the electrode having a metal substrate and a coating formed on the substrate, wherein the coating has at least a highly porous catalytic outer layer containing nickel oxide and nickel hydroxide, the porous outer layer having a surface area of at least 40 m.sup.2/g (BET). The catalytic layer is prepared from a Ni oxide/V oxide initial coating with subsequent leaching of V.

Provided is a barrier film, comprising a base layer and an inorganic layer including a first region and a second region, which have different elemental contents (atomic %) of Si, N, and O from each other as measured by XPS, and having a compactness expressed through an etching rate of 0.17 nm/s in the thickness direction for an Ar ion etching condition to etch Ta.sub.2O.sub.5 at a rate of 0.09 nm/s, wherein the second region has a higher elemental content of N than that of the first region, and the second region has a thickness of 10% or more relative to the total thickness of the inorganic layer. The barrier film has excellent barrier properties and optical properties and can be used for electronic products which are sensitive to moisture and the like.

The present invention relates to a photoelectric film and a fabrication method thereof, and in particular, to a layered polycrystalline lead selenide (PbSe) film and a fabrication method thereof. The fabrication method mainly includes: (1) fabricating a dense PbSe layer on a substrate through chemical bath deposition (CBD); (2) fabricating a loose plumbonacrite (Pb.sub.10O(OH).sub.6(CO.sub.3).sub.6) layer on the dense PbSe layer through CBD; (3) placing a sample with the dense PbSe layer and the Pb.sub.10O(OH).sub.6(CO.sub.3).sub.6 layer in a selenium ion-containing solution to allow an ion exchange reaction to finally form the layered polycrystalline PbSe film. The fabrication method has the advantages of simple process, low cost, and high controllability. The PbSe film fabricated by the method is composed of a lower dense polycrystalline cubic PbSe layer and an upper loose polycrystalline cubic PbSe layer, which can be widely used in the fabrication of components in the field of photoelectric conversion or thermoelectric conversion, such as infrared (IR) sensors, solar cells, laser emitters, and thermoelectric converters.

The plasma-resistant coating film according to the present invention is formed on a substrate, including crystalline Y.sub.2O.sub.3 particles having an average particle diameter of 0.5 μm to 5.0 μm in a SiO.sub.2 film, in which a film density of the plasma-resistant coating film is 90% or more, the film density being obtained by performing image analysis of a cross section of the film with an electron scanning microscope and by using the following expression (1), a size of pores in the film is 5 μm or less in terms of diameter, and a peeling rate of the film from the substrate measured by performing a cross-cut test is 5% or less. Film density (%)=[(S.sub.1−S.sub.2)/S.sub.1]×100 (1). However, in the expression (1), S.sub.1 is an area of the film and S.sub.2 is an area of a pore portion in the film.

An anti-fouling coated heat exchanger in which the anti-fouling coating is a non- continuous silicon oxide film, and a method of making an anti-fouling coated heat exchanger in which the anti-fouling coating is a continuous or discontinuous silicon oxide film which can be formed with high smoothness on the internal surfaces of a closed heat exchanger.