A composition includes a polymer and a solvent. The polymer includes a group (X) which is at least one selected from the group consisting of: a group including at least two cyano groups; a group including —B(OR).sub.2; a group including —PO(OR).sub.2; and a group including —P(OR).sub.2. Each R independently represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 10 carbon atoms. The polymer preferably includes the group (X) at an end of a main chain thereof or at an end of a side chain thereof.

Provided is a barrier film, comprising: a base layer; and an inorganic layer including a first region and a second region, which have different elemental contents (atomic %) of Si, N, and O from each other as measured by XPS, and having a compactness expressed through an etching rate of 0.17 nm/s or less in the thickness direction for an Ar ion etching condition to etch Ta.sub.2O.sub.5 at a rate of 0.09 nm/s, wherein the second region has a higher elemental content of N than that of the first region, the first region has a thickness of 50 nm or more, and the ratio (d1/d2) of the thickness (d1) of the first region to the thickness (d2) of the second region is 2 or less, the barrier film having excellent barrier properties and optical properties. The barrier film can be used for electronic products sensitive to moisture or the like.

Forming a lithium lanthanum zirconate thin film includes disposing zirconium oxide on a substrate to yield a zirconium oxide coating, contacting the zirconium oxide coating with a solution including a lithium salt and a lanthanum salt, heating the substrate to yield a dried salt coating on the zirconium oxide coating, melting the dried salt coating to yield a molten salt mixture, reacting the molten salt mixture with the zirconium oxide coating to yield lithium lanthanum zirconate, and cooling the lithium lanthanum zirconate to yield a lithium lanthanum zirconate coating on the substrate. In some cases, the zirconium oxide coating is contacted with an aqueous molten salt mixture including a lithium salt and a lanthanum salt, the molten salt mixture is reacted with the zirconium oxide coating to yield lithium lanthanum zirconate, and the lithium lanthanum zirconate is cooled to yield a lithium lanthanum zirconate coating on the substrate.

The disclosure relates to a preparation device and method of forming a ceramic coating on a sintered type NdFeB permanent magnet. The preparation device comprises a holding barrel, a pump body, a spraying system, and a fixture mechanism. The pump body is connected with the holding barrel and the spraying system and the spraying system is located above the fixture mechanism and there is a distance between the spraying system and the fixture mechanism. The fixture mechanism is connected with a recovery bucket through a pipeline, and the recovery bucket is connected with the holding barrel through the pipeline. The spraying system comprises a nozzle, wherein the inlet of the nozzle is connected with the pipeline of the pump body. The fixture mechanism comprises a support plate, an upper recovery trough plate and a lower recovery trough plate, wherein the lower recovery trough plate is located above the support plate.

The present invention relates to a high heat-resistant/oxidation-resistant/flame retardant□non-flammable liquid ceramic coating film for protecting an exterior of an apparatus in an extreme environment. Provided are a method of forming a high heat-resistant coating film including: (a) preparing a liquid ceramic filling agent by mixing a ceramic filler including iron (III) oxide (Fe.sub.3O.sub.4) powder, a diluent, and an inorganic nanosol; (b) applying the liquid ceramic filling agent to at least one surface of a substrate to form a coating film; and (c) curing the coating film by drying the substrate, and a high heat-resistant coating film prepared thereby.

Provided are a perovskite film and a manufacturing method thereof. The method includes the following steps. A perovskite precursor material is coated in a linear direction on a substrate with a temperature between 100° C. and 200° C., wherein a concentration of the perovskite precursor material is between 0.05 M and 1.5 M. An infrared light irradiation is performed on the perovskite precursor material to cure the perovskite precursor material to form a thin film including a compound represented by formula (1). The perovskite film has a single 2D phase structure or has a structure in which a 3D phase structure is mixed with a single 2D phase structure.

(RNH.sub.3).sub.2MA.sub.(n−1)M.sup.1.sub.nX.sub.(3n+1)  formula (1), wherein the definitions of R, MA, M.sup.1, X, and n are as defined above.

Provided are a perovskite film and a manufacturing method thereof. The method includes the following steps. A perovskite precursor material is coated in a linear direction on a substrate with a temperature between 100° C. and 200° C., wherein a concentration of the perovskite precursor material is between 0.05 M and 1.5 M. An infrared light irradiation is performed on the perovskite precursor material to cure the perovskite precursor material to form a thin film including a compound represented by formula (1). The perovskite film has a single 2D phase structure or has a structure in which a 3D phase structure is mixed with a single 2D phase structure.
(RNH.sub.3).sub.2MA.sub.(n−1)M.sup.1.sub.nX.sub.(3n+1)  formula (1), wherein the definitions of R, MA, M.sup.1, X, and n are as defined above.

A method may include ejecting, from a nozzle, a first printable ammonium-based chalcogenometalate fluid comprising a first dopant onto a substrate to form a layer of the first printable ammonium-based chalcogenometalate fluid; heating, at a first temperature, the layer of first printable ammonium-based chalcogenometalate fluid to dissipate the first printable ammonium-based chalcogenometalate fluid into a transition metal dichalcogenide having the form MX2 with the first dopant distributed therethrough; ejecting, from the nozzle, a second printable ammonium-based chalcogenometalate fluid comprising a second dopant onto the substrate to form a layer of the second printable ammonium-based chalcogenometalate fluid; and heating, at a second and higher temperature, the layers of first and second printable ammonium-based chalcogenometalate fluid.

A coating system configured to be applied to a thermal barrier coating of an article includes an infiltration coating configured to be applied to the thermal barrier coating. The infiltration coating infiltrates at least some pores of the thermal barrier coating. The infiltration coating decomposes within the at least some pores of the thermal barrier coating to coat a portion of the at least some pores of the thermal barrier coating. The infiltration coating reduces a porosity of the thermal barrier coating. The coating system also includes a reactive phase spray formulation coat configured to be applied to the thermal barrier coating. The reactive phase spray formulation coating reacts with dust deposits on the thermal barrier coating

In some embodiments, a semiconductor fabrication tool is provided. The semiconductor fabrication tool includes a first processing zone having a first ambient environment and a second processing zone having a second ambient environment disposed at different location inside a processing chamber. A first exhaust port and a second exhaust port are disposed in the first and second processing zones, respectively. A first exhaust pipe couples the first exhaust port to a first individual exhaust output. A second exhaust pipe couples the second exhaust port to a second individual exhaust output, where the second exhaust pipe is separate from the first exhaust pipe. A first adjustable fluid control element controls the first ambient environment. A second adjustable fluid control element controls the second ambient environment, where the first adjustable fluid control element and the second adjustable fluid control element are independently adjustable.