A decorative component includes a plateable resin body portion that is light-transmissive. A thin intermediate layer of material is electrolessly deposited over the body portion. The intermediate layer is laser ablated to selectively remove the intermediate layer and expose the light transmissive portion. The part is then subjected to electroplating. The ablated areas do not receive the metal layers of the electroplating, thereby defining a pattern defined by the ablation. The laser ablation may define an outline, leaving the thin intermediate layer within the outline that is electrically isolated from areas outside of the outline. The electroplating process will not apply layers to the isolated areas, and the intermediate layer therein will dissolve, exposing the light transmissive body portion. An opposite side of the part is also exposed and transmissive, such that light will pass through the body portion and illuminate the pattern.

Systems, methods, and devices related to catalyzed metal foils are disclosed. Contemplated metal foils have a bottom surface, preferably roughened to Ra of at least 0.1 μm, bearing a catalyst material. The metal foils are etchable, typically of aluminum or derivative thereof, and is less than 500 μm thick. Methods and systems for forming circuits from catalyzed metal foils are also disclosed. The catalyst material bearing surface of the metal foil is applied to a substrate and laminated, in some embodiments with a thermoset resin or thermoplastic resin therebetween or an organic material first coating the catalytic material. The metal foil is removed to expose the catalyst material, and a conductor is plated to the catalyst material.

Various inventions are disclosed in the microchip manufacturing arts. Conductive pattern formation by semi-additive processes are disclosed. Further conductive patterns and methods using activated precursors are also disclosed. Aluminum laminated surfaces and methods of circuit formation therefrom are further disclosed. Circuits formed on an aluminum heat sink are also disclosed. The inventive subject mater further discloses methods of electrolytic plating by controlling surface area of an anode.

On a surface of a substrate having a plateable material portion and a non-plateable material portion, a polymer compound, which selectively reacts with an OH end group of the non-plateable material portion, is supplied. By performing a catalyst imparting processing on the substrate on which the polymer compound is supplied, a catalyst is selectively imparted to the plateable material portion. Further, by performing a plating processing on the substrate, a plating layer is selectively formed on the plateable material portion. Before or after forming the plating layer, the polymer compound on the substrate is removed.

A mold cavity which is a mold die includes a die body and a plating layer provided on the surface of a mold surface. In this case, the mold surface has a leather-grain transfer surface for forming a grain pattern. The leather-grain transfer surface includes a first uneven-shape part and a second uneven-shape part formed at the surface of the first uneven-shape part and smaller in an uneven-shape width than the first uneven-shape part. The uneven-shape width falls within a range of 10 μm or more and less than 500 μm. The plating layer is an electroless-plating layer. A thickness of at least part of the plating layer falls within a range of 0.1 μm or more and less than 10 μm.

A printed circuit board according to an embodiment of the present disclosure includes a base film having an insulating property, and a conductive pattern that is stacked on at least one surface of the base film and that includes a plurality of wiring parts arranged in parallel. The plurality of wiring parts have an average width of 5 μm or more and 15 μm or less. The plurality of wiring parts have an electroless plating layer and an electroplating layer stacked on the electroless plating layer. A void density at an interface between the electroless plating layer and the electroplating layer in a section of the plurality of wiring parts in a thickness direction is 0.01 μm.sup.2/μm or less.

In a preferred embodiment, there is provided a modified fabric composition, the composition comprising a fabric member and an electroactive member for storing energy, wherein the fabric member comprises a fabric framework defining a deformable plane and a plurality of projections extending at an angle from the plane, and wherein the electroactive member is coupled to at least one of the projections.

An on-chip magnetic structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.

A plating method includes preparing a substrate having a surface including an adhesive material portion made of a material to which a catalyst easily adheres and a non-adhesive material portion to which the catalyst is difficult to attach; imparting the catalyst to the substrate by supplying a catalyst solution onto the substrate; removing, by supplying a catalyst removing liquid containing a reducing agent onto the substrate, the catalyst from the non-adhesive material portion while allowing the catalyst to be left on a surface of the adhesive material portion; and forming a plating layer selectively on the adhesive material portion by supplying a plating liquid onto the substrate.

A catalyst is imparted selectively to a plateable material portion 32 by performing a catalyst imparting processing on a substrate W having a non-plateable material portion 31 and the plateable material portion 32 formed on a surface thereof. Then, a hard mask layer 35 is formed selectively on the plateable material portion 32 by performing a plating processing on the substrate W. The non-plateable material portion 31 is made of SiO.sub.2 as a main component, and the plateable material portion 32 is made of a material including, as a main component, a material containing at least one of a OCH.sub.x group and a NH.sub.x group, a metal material containing Si as a main component, a material containing carbon as a main component or a catalyst metal material.