Methods for electropolishing and coating aluminum on a surface of an air and/or moisture sensitive substrate, including: in a vessel, submerging the substrate in a first molten salt bath and applying an anodizing current to the substrate at a first temperature to electropolish the surface of the substrate; wherein the first molten salt bath includes one of a first organic salt bath and first inorganic salt bath; wherein, when used, the first organic salt bath includes one of (a) aluminum halide and ionic liquid, (b) a combination of an aluminum halide and halogenatedmethylphenylsulfone (C.sub.6(H.sub.5y,X.sub.y)SO.sub.2CX.sub.3, where y is a number from 0-5), (c) a combination of an aluminum halide, an ionic liquid, and halogenatedmethylphenylsulfone (C.sub.6(H.sub.5y,X.sub.y)SO.sub.2CX.sub.3), and (d) AlF.sub.3-organofluoride-hydrofluoric acid adduct; wherein, when used, the first inorganic salt bath includes aluminum halide and alkali metal halide; and wherein the anodizing current is 10-30 mA/cm.sup.2.

There is provided a technique capable of forming a plating film excellent in film thickness and quality uniformity on a to-be-plated surface of a semiconductor wafer while suppressing an increase in costs of facilities. An apparatus for manufacturing a semiconductor device includes: a reaction bath; a supply pipe provided inside the reaction bath and including a plurality of ejection holes for ejecting the reaction solution, the ejecting holes being arranged in a longitudinal direction of the supply pipe; and an outer bath serving as a reservoir bath provided adjacent to the reaction bath on a first end side of the supply pipe and storing therein the reaction solution overflowed the reaction bath. The aperture ratio of part of the ejection holes more distant from the outer bath is at least partially higher than that of part of the ejection holes closer to the outer bath.

A method of treating a surface of an aluminum busbar includes pre-conditioning the surface of the busbar, anodizing one portion of the surface of the busbar, and plating another portion of the surface of the busbar with at least one metal. A fixture used to secure a busbar for a treatment process is also disclosed.

Systems and methods may be used to produce coated components. Exemplary chamber components may include an aluminum plate defining a plurality of apertures. The plate may include a nickel coating on a textured aluminum plate to provide for adhesion. Implementing the present technology, the nickel coating may be firmly affixed with or without first applying an intermediate adhesion layer. Deleterious components from the intermediate adhesion layer (if present) may not contaminate substrates as readily as a consequence of the texturing of the aluminum plate. The contamination from the intermediate adhesion layer is undesirable and may electrically compromise semiconductor devices during processing.

A surface-treated material of the present disclosure has a conductive substrate, and a surface treatment film which includes at least one layer of metal layers and is formed on the conductive substrate. The surface treatment film is a plating film. The surface treatment film is formed on a whole surface or a part of the conductive substrate through a zinc-containing layer that contains zinc as a main component and has a thickness of 50 nm or less, or is formed on the conductive substrate without through the zinc-containing layer. The surface-treated material has a ratio of a contact area to a test area of 85% or more as measured according to a tape test method defined in JIS H 8504: 1999.

The present invention is to provide a method for producing core-shell catalyst particles with high catalytic activity per unit mass of platinum. Disclosed is a method for producing core-shell catalyst particles including a core containing palladium and a shell containing platinum and covering the shell, wherein the method includes: a step of depositing copper on the surface of the palladium-containing particles by applying a potential that is nobler than the oxidation-reduction potential of copper to the palladium-containing particles in a copper ion-containing electrolyte, and a step of forming the shell by, after the copper deposition step and inside the reaction system kept at 3 C. or more and 10 C. or less, substituting the copper deposited on the surface of the palladium-containing particles with platinum by bringing the copper into contact with a platinum ion-containing solution in which platinum ions and a reaction inhibitor that inhibits a substitution reaction between the copper and the platinum, are contained.

A laminate including a metallic base material, a nickel-containing plating film layer formed on the metallic base material, and a gold plating film layer formed on the nickel-containing plating film layer, in which pinholes in the gold plating film layer are sealed with a passive film having a thickness of 15 nm or greater. Also disclosed is a constituent member of a semiconductor production device including the laminate and a method for producing the laminate.

A method of applying a wear resistant surface to chain links and pins of a chain by the application of an electroless nickel coating containing hard particles. The coating reduces the friction on the chain links and associated chain components, such as pins, bushings, rockers and other components. The hard particles contained in the coating may be a carbide or nitride formed using the following elements: silicon, boron, chromium or vanadium. The coating may contain a combination of carbide or nitrides. The hard particles may additional include natural diamond and/or synthetic diamond like carbon (DLC) particles.

Methods for electropolishing and coating aluminum on a surface of an air and/or moisture sensitive substrate, including: in a vessel, submerging the substrate in a first molten salt bath and applying an anodizing current to the substrate at a first temperature to electropolish the surface of the substrate; wherein the first molten salt bath includes one of a first organic salt bath and first inorganic salt bath; wherein, when used, the first organic salt bath includes one of (a) aluminum halide and ionic liquid, (b) a combination of an aluminum halide and halogenatedmethylphenylsulfone (C.sub.6(H.sub.5-y, X.sub.y)SO.sub.2CX.sub.3, where y is a number from 0-5), (c) a combination of an aluminum halide, an ionic liquid, and halogenatedmethylphenylsulfone (C.sub.6(H.sub.5-y, X.sub.y)SO.sub.2CX.sub.3), and (d) AlF.sub.3-organofluoride-hydrofluoric acid adduct; wherein, when used, the first inorganic salt bath includes aluminum halide and alkali metal halide; and wherein the anodizing current is 10-30 mA/cm.sup.2.

A method for forming a fuel cell catalyst includes a step of forming an ionomer-containing layer including carbon particles and an ionomer. Tungsten-nickel alloy particles are formed on the carbon particles. At least a portion of the nickel in the tungsten-nickel alloy particles is replaced with palladium to form palladium-coated particles. The palladium-coated particles include a palladium shell covering the tungsten-nickel alloy particles. The palladium-coated particles are coated with platinum to form an electrode layer including core shell catalysts distributed therein.