The present invention relates to a roll stamp and a method of manufacturing the same, the roll stamp including a cylindrical metal mold including a debossed pattern formed on an outer side and a hollow portion formed on an inner side, and a dummy roller inserted into the hollow portion. Because a joining portion is not formed on the entire area of the cylindrical metal mold, a problem in which edge regions are separated does not occur. Also, due to the absence of the joining portion, it is possible to perform a patterning process continuously.

The present invention relates to a method for treating a surface of a non-conductive or carbon-fibers containing substrate using a conditioning step a selector treatment step and an activating step.

The present invention relates to a method for treating a surface of a non-conductive or carbon-fibers containing substrate using a conditioning step a selector treatment step and an activating step.

Additive manufacturing processes, such as fused filament fabrication, may be employed to form printed objects in a range of shapes. It is sometimes desirable to form conductive traces upon the surface of a printed object. Conductive traces and similar features may be introduced in conjunction with fused filament fabrication processes by incorporating a metal precursor in a polymer filament having a filament body comprising a thermoplastic polymer, and forming a printed object from the polymer filament through layer-by-layer deposition, in which the metal precursor remains substantially unconverted to metal while forming the printed object. Suitable polymer filaments compatible with fused filament fabrication may comprise a thermoplastic polymer defining a filament body, and a metal precursor contacting the filament body, in which the metal precursor is activatable to form metal islands upon laser irradiation.

A plating bath for electroless plating of a substrate with nickel. The plating bath includes a nickel ion source and a stabilizing system comprising an iodate ion source and a heavy metal ion source. The substrate can be a copper or aluminum substrate.

A plating bath for electroless plating of a substrate with nickel. The plating bath includes a nickel ion source and a stabilizing system comprising an iodate ion source and a heavy metal ion source. The substrate can be a copper or aluminum substrate.

Even when a stress is applied due to energization or switching operation, a connection state of electrode layers can be appropriately maintained. A semiconductor device includes a semiconductor layer of first conductivity type, an upper surface structure formed on a surface layer of the semiconductor layer, and an upper surface electrode formed over the upper surface structure. The upper surface electrode includes a first electrode formed on an upper surface of the semiconductor layer, and a second electrode formed over an upper surface of the first electrode. The first concave portion is formed on the upper surface of the first electrode. A side surface of the first concave portion has a tapered shape. The second electrode is formed over the upper surface of the first electrode including an inside of the first concave portion.

There is provided a technique capable of forming a plating film excellent in film thickness and quality uniformity on a to-be-plated surface of a semiconductor wafer while suppressing an increase in costs of facilities. An apparatus for manufacturing a semiconductor device includes: a reaction bath; a supply pipe provided inside the reaction bath and including a plurality of ejection holes for ejecting the reaction solution, the ejecting holes being arranged in a longitudinal direction of the supply pipe; and an outer bath serving as a reservoir bath provided adjacent to the reaction bath on a first end side of the supply pipe and storing therein the reaction solution overflowed the reaction bath. The aperture ratio of part of the ejection holes more distant from the outer bath is at least partially higher than that of part of the ejection holes closer to the outer bath.

A substrate liquid processing method includes preparing a substrate having a surface including a recess on which a seed layer is stacked; supplying an electroless plating liquid onto the surface of the substrate to fill the recess with the electroless plating liquid while forming a liquid film of the electroless plating liquid on the surface; and adjusting a temperature of the liquid film from a first temperature at which a metal is precipitated on the seed layer to a second temperature lower than the first temperature to fill the recess with the metal starting from a bottom portion of the recess such that a void is not formed therein.

A film-forming apparatus is connected to a carbon steel cleanup system pipe of a BWR plant. Formic acid and hydrogen peroxide are injected into the circulation pipe of the film-forming apparatus. An iron elution accelerator aqueous solution containing 3000 ppm of formic acid and 1500 ppm of hydrogen peroxide is brought into contact with the inner surface of the cleanup system pipe, and Fe2+ is eluted from the cleanup system pipe by formic acid, and hydroxyl radicals generated from hydrogen peroxide. The film-forming aqueous solution produced from the iron elution accelerator aqueous solution by injecting the nickel formate aqueous solution is brought into contact with the inner surface of the cleanup system pipe, and the Ni ions incorporated into the inner surface by the substitution reaction are reduced by the electrons generated at the time of elution of Fe2+ to form a Ni metal film on the inner surface thereof.