A method is provided for forming a biphilic surface on a substrate comprising copper, such as a heat exchanger surface, wherein the method involves forming one or more hydrophilic areas on the surface by reacting those areas with at least one of hydrogen peroxide and ammonium hydroxide to form copper oxide and forming hydrophobic areas on the surface by reacting those areas with ammonium hydroxide solution to form copper hydroxide or by chemical etching with a combination of hydrochloric acid, hydrogen peroxide, and iron chloride. The functional surface can exhibit temporal biphilicity in response to one or more stimuli in high performance heat transfer applications.

Metal powder particles for use in additive manufacturing are made by removing material from the surface of the particles using wet chemical etching to create a nanoscale texturing of the surface, increasing absorptivity by the metal powder particles of incident laser light and maintaining flowability. The nanoscale texturing has sub-wavelength features at laser wavelengths in the range 800-1100 nm. The particles are substantially spherical and have mean diameters in the range 10-70 μm.

In one embodiment, a substrate processing liquid contains phosphoric acid as a primary component and contains water and ketone. In another embodiment, a substrate processing method includes processing a substrate in a substrate processing bath with a substrate processing liquid containing phosphoric acid, water and ketone. The method further includes discharging the substrate processing liquid from the substrate processing bath to a circulating flow channel, heating the substrate processing liquid flowing through the circulating flow channel at a temperature between 50° C. and 90° C., and supplying the substrate processing liquid again from the circulating flow channel to the substrate processing bath to circulate the substrate processing liquid under heating.

An etchant for copper includes an acid and one or more compounds selected from the group consisting of an aliphatic noncyclic compound, an aliphatic heterocyclic compound and a heteroaromatic compound. The aliphatic noncyclic compound is a saturated aliphatic noncyclic compound (A) including only two or more nitrogen atoms as heteroatoms, and 2 to 10 carbon atoms. The aliphatic heterocyclic compound is a compound (B) including a five-, six-, or seven-membered ring having one or more nitrogen atoms as one or more heteroatoms constituting the ring. The heteroaromatic compound is a compound (C) including a six-membered heteroaromatic ring having one or more nitrogen atoms as one or more heteroatoms constituting the ring.

An etchant for copper includes an acid and one or more compounds selected from the group consisting of an aliphatic noncyclic compound, an aliphatic heterocyclic compound and a heteroaromatic compound. The aliphatic noncyclic compound is a saturated aliphatic noncyclic compound (A) including only two or more nitrogen atoms as heteroatoms, and 2 to 10 carbon atoms. The aliphatic heterocyclic compound is a compound (B) including a five-, six-, or seven-membered ring having one or more nitrogen atoms as one or more heteroatoms constituting the ring. The heteroaromatic compound is a compound (C) including a six-membered heteroaromatic ring having one or more nitrogen atoms as one or more heteroatoms constituting the ring.

In various embodiments, laser systems feature beam emitters thermally coupled to heat sinks comprising, consisting essentially of, or consisting of a metal-matrix composite of a thermally conductive metal and a refractory metal. At least a portion of the surface of the heat sink is treated to form a depleted region, and a diamond coating is deposited within and/or over the depleted region. The depleted region is substantially free of the thermally conductive metal or contains the thermally conductive metal at a concentration less than that of the body of the heat sink.

In various embodiments, laser systems feature beam emitters thermally coupled to heat sinks comprising, consisting essentially of, or consisting of a metal-matrix composite of a thermally conductive metal and a refractory metal. At least a portion of the surface of the heat sink is treated to form a depleted region, and a diamond coating is deposited within and/or over the depleted region. The depleted region is substantially free of the thermally conductive metal or contains the thermally conductive metal at a concentration less than that of the body of the heat sink.

An etching solution, an annexing agent, and a manufacturing method of a metal wiring are disclosed. A main ingredient of the etching solution includes hydrogen peroxide accounting for 5% to 30% of a total weight of the etching solution, a hydrogen peroxide stabilizer accounting for 0.1% to 5% of the total weight of the etching solution, a chelant accounting for 5% to 25% of the total weight of the etching solution, a surface active agent accounting for 0.1% to 1% of the total weight of the etching solution, an inorganic acid oxidant accounting for 0.1% to 5% of the total weight of the etching solution, and a remainder of the etching solution is deionized water. The annexing agent is added to the etching solution when the etching solution is used repeatedly.

An etching solution, an annexing agent, and a manufacturing method of a metal wiring are disclosed. A main ingredient of the etching solution includes hydrogen peroxide accounting for 5% to 30% of a total weight of the etching solution, a hydrogen peroxide stabilizer accounting for 0.1% to 5% of the total weight of the etching solution, a chelant accounting for 5% to 25% of the total weight of the etching solution, a surface active agent accounting for 0.1% to 1% of the total weight of the etching solution, an inorganic acid oxidant accounting for 0.1% to 5% of the total weight of the etching solution, and a remainder of the etching solution is deionized water. The annexing agent is added to the etching solution when the etching solution is used repeatedly.

Crystal plane orientation enrichment compounds are applied to copper to modify copper grain orientation distribution to the favorable crystal plain orientation to enhance copper electroplating. Electroplating copper on the modified copper enables faster and selective electroplating.