A SUS surface treatment method for manufacturing a polymer-SUS joint structure having excellent bond strength is provided. A SUS surface treatment method for bonding with a polymer composite including a first etching step wherein the SUS surface is etched by acidic solution, a surface treatment step wherein the SUS surface is treated by ultrasonic wave, a second etching step wherein the SUS surface is etched again by acidic solution, a first silane coupling treatment step wherein the SUS surface is treated by anodic oxidation, a third etching step wherein the SUS surface is etched by acidic solution, and a second silane coupling treatment step wherein the SUS surface is treated by anodic oxidation.

A SUS surface treatment method for manufacturing a polymer-SUS joint structure having excellent bond strength is provided. A SUS surface treatment method for bonding with a polymer composite including a first etching step wherein the SUS surface is etched by acidic solution, a surface treatment step wherein the SUS surface is treated by ultrasonic wave, a second etching step wherein the SUS surface is etched again by acidic solution, a first silane coupling treatment step wherein the SUS surface is treated by anodic oxidation, a third etching step wherein the SUS surface is etched by acidic solution, and a second silane coupling treatment step wherein the SUS surface is treated by anodic oxidation.

A method for manufacturing a ruthenium wiring including (i) treating a metal surface including ruthenium using a first chemical solution including a compound having a functional group capable of coordinating to a ruthenium atom, and (ii) carrying out an etching treatment on the metal surface including ruthenium treated with the first chemical solution, using a second chemical solution.

A method for manufacturing a ruthenium wiring including (i) treating a metal surface including ruthenium using a first chemical solution including a compound having a functional group capable of coordinating to a ruthenium atom, and (ii) carrying out an etching treatment on the metal surface including ruthenium treated with the first chemical solution, using a second chemical solution.

This manufacturing method of a metal component enables precision processing of a corner portion, and the radius of curvature of a cog tip of a gear and the like can be made smaller than before. The manufacturing method of a metal component includes: (a) forming a mask film having, in plan view, a first side, a second side, and an extension portion that extends from a region between the first side and the second side on a metal film; and (b) forming a corner portion having, in plan view, a third side and a fourth side by etching the metal film.

During a material removal method, a component is received that includes a component body and a coating on the component body. The component body includes metallic first material. The coating includes second material that is different from the first material. A solution is received that includes nitric acid and hydrogen peroxide. At least a portion of the coating is subjected to the solution in order to remove at least some of the second material from the component.

During a material removal method, a component is received that includes a component body and a coating on the component body. The component body includes metallic first material. The coating includes second material that is different from the first material. A solution is received that includes nitric acid and hydrogen peroxide. At least a portion of the coating is subjected to the solution in order to remove at least some of the second material from the component.

An etchant for simultaneously etching NiFe and AlN with approximately equal etch rates that comprises phosphoric acid, acetic acid, nitric acid and deionized water. Alternating layers of NiFe and AlN may be used to form a magnetic core of a fluxgate magnetometer in an integrated circuit. The wet etch provides a good etch rate of the alternating layers with good dimensional control and with a good resulting magnetic core profile. The alternating layers of NiFe and AlN may be encapsulated with a stress relief layer. A resist pattern may be used to define the magnetic core geometry. The overetch time of the wet etch may be controlled so that the magnetic core pattern extends at least 1.5 um beyond the base of the magnetic core post etch. The photo mask used to form the resist pattern may also be used to form a stress relief etch pattern.

An etchant for simultaneously etching NiFe and AlN with approximately equal etch rates that comprises phosphoric acid, acetic acid, nitric acid and deionized water. Alternating layers of NiFe and AlN may be used to form a magnetic core of a fluxgate magnetometer in an integrated circuit. The wet etch provides a good etch rate of the alternating layers with good dimensional control and with a good resulting magnetic core profile. The alternating layers of NiFe and AlN may be encapsulated with a stress relief layer. A resist pattern may be used to define the magnetic core geometry. The overetch time of the wet etch may be controlled so that the magnetic core pattern extends at least 1.5 um beyond the base of the magnetic core post etch. The photo mask used to form the resist pattern may also be used to form a stress relief etch pattern.

A method of selectively removing NiPt material from a microelectronic substrate, the method comprising contacting the NiPt material with an aqueous etching composition comprising: an oxidising agent; a strong acid; and a source of chloride.