There is provided a method for producing a metal-plated stainless material, the method including performing an acid treatment of treating a stainless steel material with an acidic solution; performing an etching of treating the stainless steel material after the acid treatment with an etching treatment agent; and a modifying the surface of the stainless steel material after the etching into a state suitable for a metal plating process.

An etchant composition is disclosed that provides selective etching of an indium oxide film or a sliver-containing metal layer. The etchant composition includes nitric acid, an organic acid, a sulfur compound, and a tin compound. The organic acid does not include the elements of sulfur and tin. The sulfur compound does not include the element of tin. The etchant composition may minimize the damage of a lower metal film and may exhibit excellent etching characteristics in terms of etching rate, bias, residue, precipitation, and etching uniformity.

An etchant composition is disclosed that provides selective etching of an indium oxide film or a sliver-containing metal layer. The etchant composition includes nitric acid, an organic acid, a sulfur compound, and a tin compound. The organic acid does not include the elements of sulfur and tin. The sulfur compound does not include the element of tin. The etchant composition may minimize the damage of a lower metal film and may exhibit excellent etching characteristics in terms of etching rate, bias, residue, precipitation, and etching uniformity.

A method for the wet-chemical polishing of molded zinc parts, the molded parts being brought in contact with an acid solution and said acid solution containing only sulfuric acid and phosphoric acid as the strong acids.

A method for the wet-chemical polishing of molded zinc parts, the molded parts being brought in contact with an acid solution and said acid solution containing only sulfuric acid and phosphoric acid as the strong acids.

Embodiments provide an etchant composition including (A) a copper ion source, (B) a source of an organic acid ion having one or more carboxyl groups in a molecule, (C) a fluoride ion source, (D) an etching controller, a surface oxidizing power enhancer or a combination thereof as a first additive, and (E) a surfactant as a second additive; a method for etching a multilayered film; and a method for preparing a display device.

Embodiments provide an etchant composition including (A) a copper ion source, (B) a source of an organic acid ion having one or more carboxyl groups in a molecule, (C) a fluoride ion source, (D) an etching controller, a surface oxidizing power enhancer or a combination thereof as a first additive, and (E) a surfactant as a second additive; a method for etching a multilayered film; and a method for preparing a display device.

In an aspect of this disclosure, a method is provided comprising the steps of: (a) providing a silicon-containing substrate, (b) depositing a first metal on the substrate, (c) etching the substrate produced by step (b) using a first etch, and (d) etching the substrate produced by step (c) using a second etch, wherein the second etch is more aggressive towards the deposited metal than the first etch, wherein the result of step (d) comprises silicon nanowires. The method may further comprise, for example, steps (b1) subjecting the first metal to a treatment which causes it to agglomerate and (b2) depositing a second metal.

In an aspect of this disclosure, a method is provided comprising the steps of: (a) providing a silicon-containing substrate, (b) depositing a first metal on the substrate, (c) etching the substrate produced by step (b) using a first etch, and (d) etching the substrate produced by step (c) using a second etch, wherein the second etch is more aggressive towards the deposited metal than the first etch, wherein the result of step (d) comprises silicon nanowires. The method may further comprise, for example, steps (b1) subjecting the first metal to a treatment which causes it to agglomerate and (b2) depositing a second metal.

According to one embodiment, a chemical solution comprises a mixed acid including an inorganic acid, an oxidizing agent, a carboxylic acid, and water; and polyethyleneimine of a concentration in the chemical solution in a range of 0.05 wt % to 10 wt %.