C23F1/34

High-efficiency high-quality and safe alkaline cupric chloride etchant for printed circuit board
10087368 · 2018-10-02 ·

A high-efficiency high-quality and safe alkaline cupric chloride etchant for printed circuit board, which includes cupric chloride and a sub-etchant. The sub-etchant contains (in percentage by weight) 10%-30% NH4Cl; 0.0002%-25% carboxylic acid and/or ammonium carboxylate; 0.3%-25% ammonium hydroxide. The etchant is used in connection with an automatic detection and charging control during the etching process in order to keep the concentration of copper ions in the etchant no less than a set value.

High-efficiency high-quality and safe alkaline cupric chloride etchant for printed circuit board
10087368 · 2018-10-02 ·

A high-efficiency high-quality and safe alkaline cupric chloride etchant for printed circuit board, which includes cupric chloride and a sub-etchant. The sub-etchant contains (in percentage by weight) 10%-30% NH4Cl; 0.0002%-25% carboxylic acid and/or ammonium carboxylate; 0.3%-25% ammonium hydroxide. The etchant is used in connection with an automatic detection and charging control during the etching process in order to keep the concentration of copper ions in the etchant no less than a set value.

Removal composition for selectively removing hard mask and methods thereof

The present disclosure relates to a method for removing a hard mask consisting essentially of TiN, TaN, TiNxOy, TiW, W, Ti and alloys of Ti and W from a semiconductor substrate. The method comprising contacting the semiconductor substrate with a removal composition. The removal composition comprises 0.1 wt % to 90 wt % of an oxidizing agent; 0.0001 wt % to 50 wt % of a carboxylate; and the balance up to 100 wt % of the removal composition comprising deionized water.

Removal composition for selectively removing hard mask and methods thereof

The present disclosure relates to a method for removing a hard mask consisting essentially of TiN, TaN, TiNxOy, TiW, W, Ti and alloys of Ti and W from a semiconductor substrate. The method comprising contacting the semiconductor substrate with a removal composition. The removal composition comprises 0.1 wt % to 90 wt % of an oxidizing agent; 0.0001 wt % to 50 wt % of a carboxylate; and the balance up to 100 wt % of the removal composition comprising deionized water.

Eco-friendly hydrophobic or ultrahydrophobic coating method

The present invention relates to an eco-friendly and simple super-hydrophobic coating method that does not use harmful substances and special equipment. Coating according to the present invention may be performed as a single process without special equipment, and because only eco-friendly materials are used, the coating material may be easily used and discarded. In addition, even a three-dimensional pipe or a heat-exchanger having a complex shape may be modified to have super-hydrophobicity by applying the present coating, and a super-hydrophobic metal filter may be manufactured and used for oil-water separation. As a result, the present coating method is eco-friendly, simple, and applicable to various substrates, so it has great potential for application in various industries.

Eco-friendly hydrophobic or ultrahydrophobic coating method

The present invention relates to an eco-friendly and simple super-hydrophobic coating method that does not use harmful substances and special equipment. Coating according to the present invention may be performed as a single process without special equipment, and because only eco-friendly materials are used, the coating material may be easily used and discarded. In addition, even a three-dimensional pipe or a heat-exchanger having a complex shape may be modified to have super-hydrophobicity by applying the present coating, and a super-hydrophobic metal filter may be manufactured and used for oil-water separation. As a result, the present coating method is eco-friendly, simple, and applicable to various substrates, so it has great potential for application in various industries.

ETCHING COMPOSITIONS
20240376606 · 2024-11-14 · ·

An etching composition includes phosphate ions, pyrophosphate ions, polyphosphate ions. or a combination thereof and an oxidant. The etching composition has a neutral or basic pH.

ETCHING COMPOSITIONS
20240376606 · 2024-11-14 · ·

An etching composition includes phosphate ions, pyrophosphate ions, polyphosphate ions. or a combination thereof and an oxidant. The etching composition has a neutral or basic pH.

MANUFACTURE METHOD OF ARRAY SUBSTRATE AND ARRAY SUBSTRATE MANUFACTURED BY THE METHOD
20180097015 · 2018-04-05 ·

The present invention provides a manufacture method of an array substrate and an array substrate manufactured by the method. By sequentially forming the first passivation layer and the flat layer, and then implementing patterning process and anneal process to the flat layer, in the anneal process to the flat layer, the flat layer and the source/the drain cannot contact with each other due to the first passivation layer inbetween, and thus, no reaction of generating complex happens, which is beneficial for promoting the electrical property of the array substrate and realizing the signal conduction; in comparison with prior art, the present invention can decrease at least one mask in advance, which is a advantage to raise the process result, to decrease the process time and to reduce the production cost. In the array substrate, the signal transmission is smooth, and the substrate possesses the great electrical property.

MANUFACTURE METHOD OF ARRAY SUBSTRATE AND ARRAY SUBSTRATE MANUFACTURED BY THE METHOD
20180097015 · 2018-04-05 ·

The present invention provides a manufacture method of an array substrate and an array substrate manufactured by the method. By sequentially forming the first passivation layer and the flat layer, and then implementing patterning process and anneal process to the flat layer, in the anneal process to the flat layer, the flat layer and the source/the drain cannot contact with each other due to the first passivation layer inbetween, and thus, no reaction of generating complex happens, which is beneficial for promoting the electrical property of the array substrate and realizing the signal conduction; in comparison with prior art, the present invention can decrease at least one mask in advance, which is a advantage to raise the process result, to decrease the process time and to reduce the production cost. In the array substrate, the signal transmission is smooth, and the substrate possesses the great electrical property.