Pre-texturing agents, etchants, and photoresist stripping agents may be formulated to include one or more surfactants, from one or more surfactant classes, such as derivatives of amino acids that have surface-active properties.

Described herein is an etching solution suitable for both tungsten-containing metals and GST metals, which comprises: water; at least one phenolic derivative compound having at least two hydroxyl groups; at least one strong base selected from the group consisting of (i) a quaternary base; (ii) an organic amine; and (iii) a metal hydroxide; optionally an ammonium salt of an organic acid; and optionally a water-miscible solvent, wherein the pH of the etching solution is 10 or greater, and wherein the etching solution is substantially free of a peroxide oxidizer and a metal ion-containing oxidizer.

Described herein is an etching solution suitable for both tungsten-containing metals and GST metals, which comprises: water; at least one phenolic derivative compound having at least two hydroxyl groups; at least one strong base selected from the group consisting of (i) a quaternary base; (ii) an organic amine; and (iii) a metal hydroxide; optionally an ammonium salt of an organic acid; and optionally a water-miscible solvent, wherein the pH of the etching solution is 10 or greater, and wherein the etching solution is substantially free of a peroxide oxidizer and a metal ion-containing oxidizer.

A substrate processing liquid is used to etch a substrate in which at least either a bottom wall or a side wall forming a trench structure is an etched layer made of metal or a metal compound. The substrate processing liquid includes a chemical liquid containing H.sub.2O.sub.2 molecules or HO.sub.2.sup.− functioning as an etchant for etching the metal, and a complex forming agent containing NH.sub.4.sup.+ and forming a complex with ions of the metal and is adjusted to a pH of 5 or more.

A glass wiring board that can be kept from cracking by better preventing concentration of stresses in a glass plate on which a conductor layer including an electrolytic copper plating layer is provided, the wiring board includes: a glass plate; a first metal layer covering at least a part of the glass plate; and a second metal layer covering at least a part of the first metal layer, and the area of the first metal layer in contact with the second metal layer is smaller than the area of the second metal layer facing the first metal layer.

A semiconductor device with favorable electrical characteristics is provided. A source electrode and a drain electrode of a channel-etched transistor are each made to have a stacked-layer structure including a first conductive layer and a second conductive layer. A silicide that contains a metal element contained in the second conductive layer and nitrogen is formed to be in contact with a top surface and a side surface of the second conductive layer. Before etching of the first conductive layer, the silicide is formed by exposing the second conductive layer to an atmosphere containing silane, and plasma treatment is performed in a nitrogen atmosphere without exposure to the air.

Provided are: an etchant composition for titanium or titanium alloy, the etchant composition being used for selectively etching a titanium layer or titanium-containing layer formed on an oxide semiconductor layer; and an etching method using said etchant composition. The etchant composition according to the present invention, which is used for etching a titanium layer or titanium-containing layer on an oxide semiconductor, comprises: a compound containing ammonium ions; hydrogen peroxide; and a basic compound, wherein the etchant composition has a pH of 7-11.

The invention relates to a method for surface treatment of a biocompatible metal material, such as an implant, which comprises the following consecutive steps: i) abrasive mechanical treatment of the surface of said material using abrasive calcium phosphate grains, such as a mixture of hydroxyapatite and tricalcium phosphate; ii) acid treatment by hot dipping of said material in a bath comprising sulphuric acid and hydrochloric acid, followed by at least one rinse with demineralised water; iii) sodic treatment by hot dipping of said material in a soda bath followed by at least one rinse with demineralised water and drying in hot air. The implant thus treated has a surface with increased roughness with a triple level of porosity (macro-, micro- and nano-porosity) as well as improved hydrophilic properties. The method can be used for implants made of titanium alloys, such as the TA6V ELI alloy.

The invention relates to a method for surface treatment of a biocompatible metal material, such as an implant, which comprises the following consecutive steps: i) abrasive mechanical treatment of the surface of said material using abrasive calcium phosphate grains, such as a mixture of hydroxyapatite and tricalcium phosphate; ii) acid treatment by hot dipping of said material in a bath comprising sulphuric acid and hydrochloric acid, followed by at least one rinse with demineralised water; iii) sodic treatment by hot dipping of said material in a soda bath followed by at least one rinse with demineralised water and drying in hot air. The implant thus treated has a surface with increased roughness with a triple level of porosity (macro-, micro- and nano-porosity) as well as improved hydrophilic properties. The method can be used for implants made of titanium alloys, such as the TA6V ELI alloy.

The present invention provides a chemical liquid that causes a small variation in a dissolving amount of a first metal-containing substance in a case where the chemical liquid is applied to an object to be treated containing the first metal-containing substance. The present invention also provides a method for treating an object to be treated. The chemical liquid according to an embodiment of the present invention contains water, a hydroxylamine compound selected from the group consisting of hydroxylamine and a hydroxylamine salt, and a specific compound represented by Formula (1). ##STR00001##