Provided is a treatment liquid for a semiconductor with ruthenium, containing a hypobromite ion. Also provided is a treatment liquid for a semiconductor with ruthenium, containing at least a bromine-containing compound, an oxidizing agent, a basic compound, and water which are added and mixed, wherein the liquid has the bromine-containing compound added in an amount of 0.01 mass % or more and less than 2 mass % as a bromine element content with respect to the total mass of the liquid, has the oxidizing agent added in an amount of 0.1 mass % or more and 10 mass % or less with respect to the total mass, and has a pH of 8 or more and 14 or less. Further provided is a method of producing a treatment liquid for a semiconductor with ruthenium, including a step of mixing a bromine-containing compound with a solution containing a hypochlorous acid compound and a basic compound.

Provided is a treatment liquid for a semiconductor with ruthenium, containing a hypobromite ion. Also provided is a treatment liquid for a semiconductor with ruthenium, containing at least a bromine-containing compound, an oxidizing agent, a basic compound, and water which are added and mixed, wherein the liquid has the bromine-containing compound added in an amount of 0.01 mass % or more and less than 2 mass % as a bromine element content with respect to the total mass of the liquid, has the oxidizing agent added in an amount of 0.1 mass % or more and 10 mass % or less with respect to the total mass, and has a pH of 8 or more and 14 or less. Further provided is a method of producing a treatment liquid for a semiconductor with ruthenium, including a step of mixing a bromine-containing compound with a solution containing a hypochlorous acid compound and a basic compound.

The present disclosure relates generally to the field of electroplating and electroless plating. More specifically, the present disclosure relates to plating solutions and plating removal/stripping solutions for stripping zinc/nickel alloy plating from substrates.

The present disclosure relates generally to the field of electroplating and electroless plating. More specifically, the present disclosure relates to plating solutions and plating removal/stripping solutions for stripping zinc/nickel alloy plating from substrates.

A coating method for a clad steel in which stainless sheets are combined on adjacent surfaces of an aluminum sheet may include preparing the clad steel, preparing a coating solution in which an epoxy resin and titanium dioxide (TiO.sub.2) powder are combined in an acrylic resin, etching the clad steel to improve adhesion property between the coating solution and the clad steel, heating the clad steel, and performing electrodeposition by immersing the clad steel in the coating solution.

A method of producing a die for forming an interior component of a vehicle includes: setting a temperature of a plating bath in a range from 25 to 40° C.; immersing at least a forming surface on a base for the die in the plating bath; and feeding a current to the base with a current density in a range from 20 to 80 A/dm.sup.2 until a metal layer is formed on the forming surface.

A grid assembly for cryo-electron microscopy may be fabricated using standard nanofabrication processes. The grid assembly may comprise two support members, each support member comprising a silicon substrate coated with an electron-transparent silicon nitride layer. These two support members are positioned together with the silicon nitride layers facing each other with a rigid spacer layer disposed therebetween. The rigid spacer layer defines one or more chambers in which a biological sample may be provided and fast frozen with a high degree of control of the ice thickness.

A grid assembly for cryo-electron microscopy may be fabricated using standard nanofabrication processes. The grid assembly may comprise two support members, each support member comprising a silicon substrate coated with an electron-transparent silicon nitride layer. These two support members are positioned together with the silicon nitride layers facing each other with a rigid spacer layer disposed therebetween. The rigid spacer layer defines one or more chambers in which a biological sample may be provided and fast frozen with a high degree of control of the ice thickness.

A method for manufacturing a ruthenium wiring including (i) treating a metal surface including ruthenium using a first chemical solution including a compound having a functional group capable of coordinating to a ruthenium atom, and (ii) carrying out an etching treatment on the metal surface including ruthenium treated with the first chemical solution, using a second chemical solution.

Disclosed herein are an etching apparatus and method that are capable of performing an etching process in the state where a flexible film is wound around a drum-type jig, and a flexible film etched by the etching method. The etching apparatus includes a process tank containing an etchant therein, a drum-type jig rotatably provided in the process tank to be immersed into the etchant in a state where a flexible film on which a thin film is formed is wound around the drum-type jig, and a drum-type jig driver configured to rotate the drum-type jig. The etching apparatus has a compact structure to efficiently perform the etching process on the large area flexible film on which the thin film is formed.