The present invention addresses the problem of providing a remover composition which can sufficiently remove ruthenium (Ru) remaining on substrates and can be inhibited from evolving RuO.sub.4 gas. The remover composition, which is for removing ruthenium remaining on substrates, has a pH at 25° C. of 8 or higher and includes one or more pH buffer ingredients.

Provided is a treatment liquid for a semiconductor with ruthenium, containing a hypobromite ion. Also provided is a treatment liquid for a semiconductor with ruthenium, containing at least a bromine-containing compound, an oxidizing agent, a basic compound, and water which are added and mixed, wherein the liquid has the bromine-containing compound added in an amount of 0.01 mass % or more and less than 2 mass % as a bromine element content with respect to the total mass of the liquid, has the oxidizing agent added in an amount of 0.1 mass % or more and 10 mass % or less with respect to the total mass, and has a pH of 8 or more and 14 or less. Further provided is a method of producing a treatment liquid for a semiconductor with ruthenium, including a step of mixing a bromine-containing compound with a solution containing a hypochlorous acid compound and a basic compound.

Provided is a treatment liquid for a semiconductor with ruthenium, containing a hypobromite ion. Also provided is a treatment liquid for a semiconductor with ruthenium, containing at least a bromine-containing compound, an oxidizing agent, a basic compound, and water which are added and mixed, wherein the liquid has the bromine-containing compound added in an amount of 0.01 mass % or more and less than 2 mass % as a bromine element content with respect to the total mass of the liquid, has the oxidizing agent added in an amount of 0.1 mass % or more and 10 mass % or less with respect to the total mass, and has a pH of 8 or more and 14 or less. Further provided is a method of producing a treatment liquid for a semiconductor with ruthenium, including a step of mixing a bromine-containing compound with a solution containing a hypochlorous acid compound and a basic compound.

An object of the present invention is to provide a composition that exhibits excellent dissolving ability and etching selectivity (particularly, etching selectivity for a Ru-containing substance and other metal-containing substances) to metal-containing substances (particularly, a Ru-containing substance), a kit for preparing the composition, and a method for treating a substrate by using the composition.

The composition according to an embodiment of the present invention is a composition for removing metal-containing substances, and contains one or more periodic acid compounds selected from the group consisting of a periodic acid and a salt thereof, an azole compound, and an alkali compound.

An anti-coking nanomaterial based on a stainless steel surface. In percentage by weight, the nanomaterial comprises: 0 to 3% of carbon, 23% to 38% of oxygen, 38% to 53% of chromium, 10% to 35% of ferrum, 0 to 2% of molybdenum, 0 to 4% of nickel, 3.5 to 5% of silicon, 0 to 1% of calcium, and the balance of impurity elements. Also disclosed are a preparation method for the anti-coking nanomaterial, the anti-coking nanomaterial that is based on a stainless steel surface and that is prepared by using the preparation method, and a stainless steel substrate comprising the anti-coking nanocrystalline material.

An anti-coking nanomaterial based on a stainless steel surface. In percentage by weight, the nanomaterial comprises: 0 to 3% of carbon, 23% to 38% of oxygen, 38% to 53% of chromium, 10% to 35% of ferrum, 0 to 2% of molybdenum, 0 to 4% of nickel, 3.5 to 5% of silicon, 0 to 1% of calcium, and the balance of impurity elements. Also disclosed are a preparation method for the anti-coking nanomaterial, the anti-coking nanomaterial that is based on a stainless steel surface and that is prepared by using the preparation method, and a stainless steel substrate comprising the anti-coking nanocrystalline material.

A rolled metal sheet includes an obverse surface and a reverse surface that is a surface located opposite to the obverse surface. At least either one of the obverse surface and the reverse surface is a processing object. A method for manufacturing a metal mask substrate includes reducing a thickness of the rolled metal sheet to 10 μm or less by etching the processing object by 3 μm or more by use of an acidic etching liquid, and roughening the processing object so that the processing object becomes a resist formation surface that has a surface roughness Rz of 0.2 μm or more, thereby obtaining a metal mask sheet.

A rolled metal sheet includes an obverse surface and a reverse surface that is a surface located opposite to the obverse surface. At least either one of the obverse surface and the reverse surface is a processing object. A method for manufacturing a metal mask substrate includes reducing a thickness of the rolled metal sheet to 10 μm or less by etching the processing object by 3 μm or more by use of an acidic etching liquid, and roughening the processing object so that the processing object becomes a resist formation surface that has a surface roughness Rz of 0.2 μm or more, thereby obtaining a metal mask sheet.

The present invention provides a treatment liquid for treating a semiconductor wafer in a semiconductor formation process, the treatment liquid including: (A) hypochlorite ion; (B) a pH buffer; and (C) a tetraalkylammonium ion represented by the following formula (1):

##STR00001##

(wherein each of R.sup.1, R.sup.2, R.sup.3 and R.sup.4 is independently an alkyl group having carbon number from 1 to 20).

The present invention addresses the problem of providing a remover composition which can sufficiently remove ruthenium (Ru) remaining on substrates and can be inhibited from evolving RuO.sub.4 gas. The remover composition, which is for removing ruthenium remaining on substrates, has a pH at 25° C. of 8 or higher and includes one or more pH buffer ingredients.