C23F1/40

SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
20210305053 · 2021-09-30 ·

A substrate processing apparatus includes a substrate rotator, a processing liquid supply, an anode and a cathode, and a controller. The substrate rotator is configured to hold and rotate a substrate. The processing liquid supply is configured to supply a processing liquid to the substrate held by the substrate rotator. The anode and the cathode are configured to apply a voltage to the processing liquid supplied from the processing liquid supply. The controller is configured to control the substrate rotator, the processing liquid supply, and the anode and the cathode. The controller allows, by contacting the anode and the cathode with the processing liquid independently, the processing liquid in contact with the anode and the processing liquid in contact with the cathode to be supplied to the substrate while being spaced apart from each other when the substrate is rotated.

Etching solution for tungsten and GST films

Described herein is an etching solution suitable for both tungsten-containing metals and GST metals, which comprises: water; at least one phenolic derivative compound having at least two hydroxyl groups; at least one strong base selected from the group consisting of (i) a quaternary base; (ii) an organic amine; and (iii) a metal hydroxide; optionally an ammonium salt of an organic acid; and optionally a water-miscible solvent, wherein the pH of the etching solution is 10 or greater, and wherein the etching solution is substantially free of a peroxide oxidizer and a metal ion-containing oxidizer.

Etching solution for tungsten and GST films

Described herein is an etching solution suitable for both tungsten-containing metals and GST metals, which comprises: water; at least one phenolic derivative compound having at least two hydroxyl groups; at least one strong base selected from the group consisting of (i) a quaternary base; (ii) an organic amine; and (iii) a metal hydroxide; optionally an ammonium salt of an organic acid; and optionally a water-miscible solvent, wherein the pH of the etching solution is 10 or greater, and wherein the etching solution is substantially free of a peroxide oxidizer and a metal ion-containing oxidizer.

RUTHENIUM-ETCHING SOLUTION, METHOD FOR MANUFACTURING RUTHENIUM-ETCHING SOLUTION, METHOD FOR PROCESSING OBJECT TO BE PROCESSED, AND METHOD FOR MANUFACTURING RUTHENIUM-CONTAINING WIRING
20210155851 · 2021-05-27 ·

A ruthenium-etching solution for carrying out an etching process on ruthenium. The etching solution includes orthoperiodic acid and ammonia, in which a pH is 8 or higher and 10 or lower. A method for manufacturing the ruthenium-etching solution, a method for processing an object to be processed including carrying out an etching process on an object to be processed including ruthenium using the ruthenium-etching solution, and a method for manufacturing a ruthenium-containing wiring.

Method of producing die, die, and interior component of vehicle
10954601 · 2021-03-23 · ·

A method of producing a die for forming an interior component of a vehicle includes: setting a temperature of a plating bath in a range from 25 to 40 C.; immersing at least a forming surface on a base for the die in the plating bath; and feeding a current to the base with a current density in a range from 20 to 80 A/dm.sup.2 until a metal layer is formed on the forming surface.

Composition and method for creating nanoscale surface geometry on an implantable device

Compositions and methods for etching a surface of an implantable device are disclosed. The compositions generally include one or more alkali components, such as a metal hydroxide and an amine, one or more chelating agents, and optionally iron (Fe) and/or certain component metals of the metal or alloy to be etched. For example, when etching a titanium device, the metals may include titanium (Ti). Alternatively, the composition may be an electrolyte composition useful for electrochemical etching of the implantable device. These compositions and methods may generate nanoscale geometry on the surface of the implantable device to provide implants with accelerate osseointegration and healing after surgery.

Composition and method for creating nanoscale surface geometry on an implantable device

Compositions and methods for etching a surface of an implantable device are disclosed. The compositions generally include one or more alkali components, such as a metal hydroxide and an amine, one or more chelating agents, and optionally iron (Fe) and/or certain component metals of the metal or alloy to be etched. For example, when etching a titanium device, the metals may include titanium (Ti). Alternatively, the composition may be an electrolyte composition useful for electrochemical etching of the implantable device. These compositions and methods may generate nanoscale geometry on the surface of the implantable device to provide implants with accelerate osseointegration and healing after surgery.

Surface modification of metals and alloys to alter wetting properties
10907258 · 2021-02-02 · ·

Surfaces of metals and alloys that exhibit hydrophilic, omniphilic or hydrophobic properties, and methods of preparation thereof. The surface is roughened by surface polishing, thermo-catalytic etching, and temperature gradient etching. This procedure produces a hierarchical micro-/nano-scale roughness in the surface which comprises grooves, micro-cavities, and nano-cavities. This greatly enhances the hydrophilic and omniphilic properties of the pure surface without the need for coatings or oxidation. A further step of immersing the roughened surface in a stearic acid solution makes the surface hydrophobic or superhydrophobic.

Chemical liquid and method for treating object to be treated

The present invention provides a chemical liquid that causes a small variation in a dissolving amount of a first metal-containing substance in a case where the chemical liquid is applied to an object to be treated containing the first metal-containing substance. The present invention also provides a method for treating an object to be treated. The chemical liquid according to an embodiment of the present invention contains water, a hydroxylamine compound selected from the group consisting of hydroxylamine and a hydroxylamine salt, and a specific compound represented by Formula (1). ##STR00001##

Chemical liquid and method for treating object to be treated

The present invention provides a chemical liquid that causes a small variation in a dissolving amount of a first metal-containing substance in a case where the chemical liquid is applied to an object to be treated containing the first metal-containing substance. The present invention also provides a method for treating an object to be treated. The chemical liquid according to an embodiment of the present invention contains water, a hydroxylamine compound selected from the group consisting of hydroxylamine and a hydroxylamine salt, and a specific compound represented by Formula (1). ##STR00001##