The disclosure relates to a method for manufacturing a transfer film including an electrode layer, the method comprising: an electrode layer formation step of forming an electrode layer on a carrier member by using a conductive material; a placement step of placing the carrier member on at least one side of an insulating resin layer respectively; a bonding step of bonding the carrier member and the insulating resin layer together by applying pressure thereto; and a transfer step of removing the carrier member to transfer the electrode layer on the insulating resin layer.

A connection terminal in which alloy particles made of an intermetallic compound containing tin and palladium are exposed on an outermost surface of a contact configured to electrically contact a mating conductor and distributed on a surface of a base material at least in the contact, wherein: a tin part made of pure tin or an alloy having a higher ratio of tin to palladium than the intermetallic compound is not exposed on a plane passing through a point where a height of the alloy particles from the surface of the base material is highest.

A coating method for a clad steel in which stainless sheets are combined on adjacent surfaces of an aluminum sheet may include preparing the clad steel, preparing a coating solution in which an epoxy resin and titanium dioxide (TiO.sub.2) powder are combined in an acrylic resin, etching the clad steel to improve adhesion property between the coating solution and the clad steel, heating the clad steel, and performing electrodeposition by immersing the clad steel in the coating solution.

A coating method for a clad steel in which stainless sheets are combined on adjacent surfaces of an aluminum sheet may include preparing the clad steel, preparing a coating solution in which an epoxy resin and titanium dioxide (TiO.sub.2) powder are combined in an acrylic resin, etching the clad steel to improve adhesion property between the coating solution and the clad steel, heating the clad steel, and performing electrodeposition by immersing the clad steel in the coating solution.

The present invention provides a composition for cleaning a mask comprising a) 0.2 to 10% by weight of two or more alkali compounds selected from alkali hydroxides and alkali carbonates, b) 0.1 to 8% by weight of nitrate, c) 1 to 8% by weight of an oxidizer, and d) residual water, wherein the pH is 11.5 to 14.

According to the present invention, a composition for cleaning a mask and a method for cleaning a mask using the same, which can remove only the film deposited on the mask in a short time without damaging the mask, was provided.

In accordance with an embodiment, a substrate treatment method includes bringing a first metallic film on a substrate into contact with a first liquid, mixing a second liquid into the first liquid, and bringing the first metallic film or a second metallic film different from the first metallic film into contact with a liquid in which the first liquid and the second liquid are mixed together to etch the first or second metallic film. The first liquid includes an oxidizing agent, a complexing agent, and water (H.sub.2O) of a first content rate to etch the first metallic film. The second liquid includes water (H.sub.2O) at a second content rate higher than the first content rate after the etching has started.

In accordance with an embodiment, a substrate treatment method includes bringing a first metallic film on a substrate into contact with a first liquid, mixing a second liquid into the first liquid, and bringing the first metallic film or a second metallic film different from the first metallic film into contact with a liquid in which the first liquid and the second liquid are mixed together to etch the first or second metallic film. The first liquid includes an oxidizing agent, a complexing agent, and water (H.sub.2O) of a first content rate to etch the first metallic film. The second liquid includes water (H.sub.2O) at a second content rate higher than the first content rate after the etching has started.

A transparent conductive film (TCF) and methods for creating the TCF. The TCF includes a substrate having a surface, a metal mesh layer over at least a portion of the surface of the substrate, and a conductive layer over the metal mesh layer. The conductive layer includes carbon nanotubes and a binder.

A transparent conductive film (TCF) and methods for creating the TCF. The TCF includes a substrate having a surface, a metal mesh layer over at least a portion of the surface of the substrate, and a conductive layer over the metal mesh layer. The conductive layer includes carbon nanotubes and a binder.

Provided are an inhibitor for RuO.sub.4 gas generation used in a manufacturing process of a semiconductor element, that inhibits a RuO.sub.4 gas generated when a semiconductor wafer containing ruthenium and a treatment liquid are brought into contact, and a method for inhibiting the RuO.sub.4 gas. Specifically, provided is an inhibitor for RuO.sub.4 gas generation for inhibiting a RuO.sub.4 gas generated when a semiconductor wafer containing ruthenium and a treatment liquid are brought into contact in semiconductor formation steps, wherein the inhibitor includes an onium salt consisting of an onium ion and a bromine-containing ion. Also provided is a method for inhibiting RuO.sub.4 gas generation by adding the inhibitor to a ruthenium treatment liquid or a ruthenium-containing liquid used in semiconductor formation steps.