A composition comprising: (a) cobalt ions, and (b) an additive of formula (I) wherein R.sup.1 is selected from X-Y; R.sup.2 is selected from R.sup.1 and R.sup.3; X is selected from linear or branched C.sub.1 to C.sub.10 alkanediyl, linear or branched C.sub.2 to C.sub.10 alkenediyl, linear or branched C.sub.2 to C.sub.10 alkynediyl, and (C.sub.2H.sub.3R.sup.6O).sub.nH; Y is selected from OR.sup.3, NR.sup.3R.sup.4, N.sup.+R.sup.3R.sup.4R.sup.5 and NH(CO)R.sup.3; R.sup.3, R.sup.4, R.sup.5 are the same or different and are selected from (i) H, (ii) C.sub.5 to C.sub.20 aryl, (iii) C.sub.1 to C.sub.10 alkyl (iv) C.sub.6 to C.sub.20 arylalkyl, (v) C.sub.6 to C.sub.20 alkylaryl, which may be substituted by OH, SO.sub.3H, COOH or a combination thereof, and (vi) (C.sub.2H.sub.3R.sup.6O).sub.nH, and wherein R.sup.3 and R.sup.4 may together form a ring system, which may be interrupted by O or NR.sup.7; m, n are integers independently selected from 1 to 30; R.sup.6 is selected from II and C.sub.1 to C.sub.5 alkyl; R.sup.7 is selected from R.sup.6 and formula (II).

##STR00001##

A composition comprising: (a) cobalt ions, and (b) an additive of formula (I) wherein R.sup.1 is selected from X-Y; R.sup.2 is selected from R.sup.1 and R.sup.3; X is selected from linear or branched C.sub.1 to C.sub.10 alkanediyl, linear or branched C.sub.2 to C.sub.10 alkenediyl, linear or branched C.sub.2 to C.sub.10 alkynediyl, and (C.sub.2H.sub.3R.sup.6O).sub.nH; Y is selected from OR.sup.3, NR.sup.3R.sup.4, N.sup.+R.sup.3R.sup.4R.sup.5 and NH(CO)R.sup.3; R.sup.3, R.sup.4, R.sup.5 are the same or different and are selected from (i) H, (ii) C.sub.5 to C.sub.20 aryl, (iii) C.sub.1 to C.sub.10 alkyl (iv) C.sub.6 to C.sub.20 arylalkyl, (v) C.sub.6 to C.sub.20 alkylaryl, which may be substituted by OH, SO.sub.3H, COOH or a combination thereof, and (vi) (C.sub.2H.sub.3R.sup.6O).sub.nH, and wherein R.sup.3 and R.sup.4 may together form a ring system, which may be interrupted by O or NR.sup.7; m, n are integers independently selected from 1 to 30; R.sup.6 is selected from II and C.sub.1 to C.sub.5 alkyl; R.sup.7 is selected from R.sup.6 and formula (II).

##STR00001##

Compositions and methods of using such compositions for electroplating cobalt onto semiconductor base structures comprising submicron-sized electrical interconnect features are provided herein. The interconnect features are metallized by contacting the semiconductor base structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one or more of a depolarizing compound and a uniformity enhancer. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The method presented herein is useful for superfilling interconnect features.

Compositions and methods of using such compositions for electroplating cobalt onto semiconductor base structures comprising submicron-sized electrical interconnect features are provided herein. The interconnect features are metallized by contacting the semiconductor base structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one or more of a depolarizing compound and a uniformity enhancer. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The method presented herein is useful for superfilling interconnect features.

In a method of manufacturing a Ni plated coating that includes at least one Ni plated layer, an agitation intensity of a plating bath is changed while the Ni plated layer is being electrodeposited to change potential of the deposited Ni plated layer in a deposition depth direction. A Ni plated coating including a D-Ni plated layer and a B-Ni plated layer adjoining the D-Ni plated layer has, other than an interface voltage changing region at an interface between the D-Ni plated layer and the B-Ni plated layer, an in-layer voltage changing region in which, in the D-Ni plated layer or in the B-Ni plated layer, potential is changed in a deposition depth direction at an average rate of 1 mV/0.1 m or greater.

A deposition mask includes a mask body and a through-hole provided in the mask body and through which a deposition material passes when the deposition material is deposited on a deposition target substrate. The mask body satisfies y?950 and y?23x?1280 when an indentation elastic modulus is x (GPa) and a 0.2% yield strength is y (MPa).

Described herein is a composition including metal ions consisting essentially of cobalt ions, and a specific monomeric and polymeric suppressing agent including a carboxylic, sulfonic, sulfinic, phosphonic, or phosphinic acid functional groups which show a suppressing effect that is required for void-free bottom-up filling of nanometer-sized recessed features.

A printed circuit board for a memory card includes an insulating layer; a mounting part on a first surface of the insulating layer, the mounting part being electrically connected to a memory device; and a terminal part on a second surface of the insulating layer, the terminal part being electrically connected to an external electronic appliance, wherein a same metal layer having a same property is formed on exposed surfaces of the mounting part and the terminal part.

A printed circuit board for a memory card includes an insulating layer; a mounting part on a first surface of the insulating layer, the mounting part being electrically connected to a memory device; and a terminal part on a second surface of the insulating layer, the terminal part being electrically connected to an external electronic appliance, wherein a same metal layer having a same property is formed on exposed surfaces of the mounting part and the terminal part.