A method for plating a printed circuit board, includes placing a substrate, including a through hole, in contact with a plating solution and disposing the substrate to face an electrode; and applying a pulsed current to each surface of the substrate, including applying pulsed currents of opposite polarity to both surfaces of the substrate at least once and applying pulsed forward currents to both surfaces of the substrate at least once, to plate from a middle to an end of the through hole.

Compositions and methods of using such compositions for electroplating cobalt onto semiconductor base structures comprising submicron-sized electrical interconnect features are provided herein. The interconnect features are metallized by contacting the semiconductor base structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one or more of a depolarizing compound and a uniformity enhancer. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The method presented herein is useful for superfilling interconnect features.

Compositions and methods of using such compositions for electroplating cobalt onto semiconductor base structures comprising submicron-sized electrical interconnect features are provided herein. The interconnect features are metallized by contacting the semiconductor base structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one or more of a depolarizing compound and a uniformity enhancer. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The method presented herein is useful for superfilling interconnect features.

A high-strength coatings and methods of fabrication to yield single-crystal-like nickel containing nanotwins and stacking faults.

A high-strength coatings and methods of fabrication to yield single-crystal-like nickel containing nanotwins and stacking faults.

A cobalt electroplating composition may include (a) cobalt ions; and (b) an ammonium compound of formula (NR.sup.1R.sup.2R.sup.3H.sup.+).sub.nX.sup.1−, wherein R.sup.1, R.sup.2, R.sup.3 are independently H or linear or branched C.sub.1 to C.sub.6 alkyl, X is one or more n valent inorganic or organic counter ion(s), and n is an integer from 1, 2, or 3.

A cobalt electroplating composition may include (a) cobalt ions; and (b) an ammonium compound of formula (NR.sup.1R.sup.2R.sup.3H.sup.+).sub.nX.sup.1−, wherein R.sup.1, R.sup.2, R.sup.3 are independently H or linear or branched C.sub.1 to C.sub.6 alkyl, X is one or more n valent inorganic or organic counter ion(s), and n is an integer from 1, 2, or 3.

A composition comprising (a) cobalt ions, and (b) an additive of formula I

##STR00001## wherein R.sup.1 is selected from X-Y; R.sup.2 is selected from R.sup.1 and R.sup.3; X is selected from linear or branched C.sub.1 to C.sub.10 alkanediyl, linear or branched C.sub.2 to C.sub.10 alkenediyl, linear or branched C.sub.2 to C.sub.10 alkynediyl, and (C.sub.2H.sub.3R.sup.6O).sub.mH; Y is selected from OR.sup.3, NR.sup.3R.sup.4, N+R.sup.3R.sup.4R.sup.5 and NH(CO)R.sup.3; R.sup.3, R.sup.4, R.sup.5 are the same or different and are selected from (i) H, (ii) C.sub.5 to C.sub.20 aryl, (iii) C.sub.1 to C.sub.10 alkyl (iv) C.sub.6 to C.sub.20 arylalkyl, (v) C.sub.6 to C.sub.20 alkylaryl, which may be substituted by OH, SO.sub.3H, COOH or a combination thereof, and (vi) (C.sub.2H.sub.3R.sup.6O).sub.nH, and wherein R.sup.3 and R.sup.4 may together form a ring system, which may be interrupted by O or NR.sup.7; m, n are integers independently selected from 1 to 30; R.sup.6 is selected from H and C.sub.1 to C.sub.5 alkyl; R.sup.7 is selected from R.sup.6 and

##STR00002##

A composition comprising (a) cobalt ions, and (b) an additive of formula I

##STR00001## wherein R.sup.1 is selected from X-Y; R.sup.2 is selected from R.sup.1 and R.sup.3; X is selected from linear or branched C.sub.1 to C.sub.10 alkanediyl, linear or branched C.sub.2 to C.sub.10 alkenediyl, linear or branched C.sub.2 to C.sub.10 alkynediyl, and (C.sub.2H.sub.3R.sup.6O).sub.mH; Y is selected from OR.sup.3, NR.sup.3R.sup.4, N+R.sup.3R.sup.4R.sup.5 and NH(CO)R.sup.3; R.sup.3, R.sup.4, R.sup.5 are the same or different and are selected from (i) H, (ii) C.sub.5 to C.sub.20 aryl, (iii) C.sub.1 to C.sub.10 alkyl (iv) C.sub.6 to C.sub.20 arylalkyl, (v) C.sub.6 to C.sub.20 alkylaryl, which may be substituted by OH, SO.sub.3H, COOH or a combination thereof, and (vi) (C.sub.2H.sub.3R.sup.6O).sub.nH, and wherein R.sup.3 and R.sup.4 may together form a ring system, which may be interrupted by O or NR.sup.7; m, n are integers independently selected from 1 to 30; R.sup.6 is selected from H and C.sub.1 to C.sub.5 alkyl; R.sup.7 is selected from R.sup.6 and

##STR00002##

In a deposition method of NiPB system plating film, electroplating is performed in a plating bath containing Ni ions, phosphorous acid ions, alkylamine borane, acetic acid, at least one sort of a primary brightening agent, and a secondary brightening agent including at least one sort of a surface active agent. In the above-mentioned plating bath, concentration of alkylamine borane in said plating bath is 1.37 mmol/L or more, and concentration of acetic acid in said plating bath is 0.70 mol/L or more and less than 2.80 mol/L. Thereby, plating film having high hardness of Hv 700 or more can be deposited with high manufacturing efficiency without baking processing, while reducing occurrence of poor appearance, such as burning and abnormal precipitation, even when current density is increased to 80 A/dm.sup.2 or more to raise deposition rate.