There is disclosed a method of forming a high luminosity inorganic coating on an aluminium or aluminium alloy article, wherein the article is immersed in an electrolyte and subjected to a plasma anodising process, wherein the coating has a luminosity L*≥80.0% and comprises at least 50 wt % gamma alumina. Also disclosed are inorganic coatings formed by the method, and aluminium or aluminium alloys coated by the method.

There is disclosed a method of forming a high luminosity inorganic coating on an aluminium or aluminium alloy article, wherein the article is immersed in an electrolyte and subjected to a plasma anodising process, wherein the coating has a luminosity L*≥80.0% and comprises at least 50 wt % gamma alumina. Also disclosed are inorganic coatings formed by the method, and aluminium or aluminium alloys coated by the method.

The surface-treated aluminum material includes an aluminum material and an oxide film formed on at least part of a surface of the aluminum material, and when a perimeter and an area of a void on a surface of the oxide film are represented by L and S, respectively, an undulation degree of the void defined as L.sup.2/S×(¼π) is 2.5 or more.

A method is disclosed for treating an anodized metal surface. According to the method, polynuclear clusters comprising aluminum oxide hydroxide are applied to the anodized metal surface.

A data analysis method for optimization of aluminum anodizing and dyeing process acquires a plurality of sample data groups, each sample data groups comprising dyeing result data and parameter data of multiple processing parameters. Contribution value of each processing parameter data relative to the dyeing result data in each of the plurality of sample data groups is determined, and the contribution values are used to determine at least one essential processing parameter. The essential processing parameters are then adjusted according to a data analysis result for improving quality of products. A computing device and storage medium are also provided.

Porous solid materials are provided. The porous solid materials include a plurality of interconnected wires forming an ordered network. The porous solid materials may have a predetermined volumetric surface area ranging between 2 m.sup.2/cm.sup.3 and 90 m.sup.2/cm.sup.3, a predetermined porosity ranging between 3% and 90% and an electrical conductivity higher than 100 S/cm. The porous solid materials may have a predetermined volumetric surface area ranging between 3 m.sup.2/cm.sup.3 and 72 m.sup.2/cm.sup.3, a predetermined porosity ranging between 80% and 95% and an electrical conductivity higher than 100 S/cm. The porous solid materials (100) may have a predetermined volumetric surface area ranging between 3 m.sup.2/cm.sup.3 and 85 m.sup.2/cm.sup.3, a predetermined porosity ranging between 65% and 90% and an electrical conductivity higher than 2000 S/cm. Methods for the fabrication of such porous solid materials and devices including such porous solid material are also disclosed.

Porous solid materials are provided. The porous solid materials include a plurality of interconnected wires forming an ordered network. The porous solid materials may have a predetermined volumetric surface area ranging between 2 m.sup.2/cm.sup.3 and 90 m.sup.2/cm.sup.3, a predetermined porosity ranging between 3% and 90% and an electrical conductivity higher than 100 S/cm. The porous solid materials may have a predetermined volumetric surface area ranging between 3 m.sup.2/cm.sup.3 and 72 m.sup.2/cm.sup.3, a predetermined porosity ranging between 80% and 95% and an electrical conductivity higher than 100 S/cm. The porous solid materials (100) may have a predetermined volumetric surface area ranging between 3 m.sup.2/cm.sup.3 and 85 m.sup.2/cm.sup.3, a predetermined porosity ranging between 65% and 90% and an electrical conductivity higher than 2000 S/cm. Methods for the fabrication of such porous solid materials and devices including such porous solid material are also disclosed.

An electronic device according to various embodiments of the disclosure includes: a display; and a housing adjacent to the display, wherein at least a part of the housing includes: an aluminum alloy layer; a first film layer formed on the aluminum alloy layer; and a second film layer formed between the aluminum alloy layer and the first film layer and which includes multiple snowflake structures arranged adjacent to the first film layer. The first film layer is formed by a first anodizing process using a first voltage on the aluminum alloy layer, and the second film layer is formed by a second anodizing process using a second voltage on the aluminum alloy layer after the first anodizing process.

At least one embodiment relates to a method for transforming at least part of a valve metal layer into a template that includes a plurality of spaced channels aligned longitudinally along a first direction. The method includes a first anodization step that includes anodizing the valve metal layer in a thickness direction to form a porous layer that includes a plurality of channels. Each channel has channel walls and a channel bottom. The channel bottom is coated with a first insulating metal oxide barrier layer as a result of the first anodization step. The method also includes a protective treatment. Further, the method includes a second anodization step after the protective treatment. The second anodization step substantially removes the first insulating metal oxide barrier layer, induces anodization, and creates a second insulating metal oxide barrier layer. In addition, the method includes an etching step.

At least one embodiment relates to a method for transforming at least part of a valve metal layer into a template that includes a plurality of spaced channels aligned longitudinally along a first direction. The method includes a first anodization step that includes anodizing the valve metal layer in a thickness direction to form a porous layer that includes a plurality of channels. Each channel has channel walls and a channel bottom. The channel bottom is coated with a first insulating metal oxide barrier layer as a result of the first anodization step. The method also includes a protective treatment. Further, the method includes a second anodization step after the protective treatment. The second anodization step substantially removes the first insulating metal oxide barrier layer, induces anodization, and creates a second insulating metal oxide barrier layer. In addition, the method includes an etching step.