An engineered substrate includes a support structure comprising a polycrystalline ceramic core, an adhesion layer coupled to the polycrystalline ceramic core, and a barrier layer coupled to the adhesion layer. The engineered substrate also includes an bonding layer coupled to the support structure, a substantially single crystal layer coupled to the bonding layer, and an epitaxial gallium nitride layer coupled to the substantially single crystal layer.

[Problem] To provide a crystal laminate structure having a -Ga.sub.2O.sub.3 based single crystal film in which a dopant is included throughout the crystal and the concentration of the dopant can be set across a broad range. [Solution] In one embodiment of the present invention, provided is a crystal laminate structure 1 which includes: a Ga.sub.2O.sub.3 based substrate 10; and a -Ga.sub.2O.sub.3 based single crystal film 12 formed by epitaxial crystal growth on a primary face 11 of the Ga.sub.2O.sub.3 based substrate 10 and including Cl and a dopant doped in parallel with the crystal growth at a concentration of 110.sup.13 to 5.010.sup.20 atoms/cm.sup.3.

A method of fabricating a plurality of single crystal CVD diamonds. The method includes mounting a plurality of single crystal diamond substrates on a first carrier substrate. The plurality of single crystal diamond substrates is subjected to a first CVD diamond growth process to form a plurality of single crystal CVD diamonds on the plurality of single crystal diamond substrates. The plurality of single crystal CVD diamonds are mounted in a recessed carrier substrate and subjected to a second CVD diamond growth process.

A semi-finished product having a substrate with a first side and an opposite second side is provided, wherein at least one diamond layer is arranged on the first side, wherein the diamond layer comprises monocrystalline diamond and the substrate comprises a material different from the diamond layer. A method for producing such a semi-finished product is provided and an integrated optical component may be produced from the semi-finished product.

A film forming method of forming an oxide film on a substrate, wherein the oxide film has germanium doped therein and comprises a property of a conductor or a semiconductor, is disclosed herein. The film forming method may include supplying mist of a solution to a surface of the substrate while heating the substrate, wherein an oxide film material including a constituent element of the oxide film and an organic germanium compound may be dissolved in the solution.

A film forming method of forming a gallium oxide film doped with tin on a substrate is disclosed herein. The film forming method may include supplying mist of a solution to a surface of the substrate while heating the substrate, wherein a gallium compound and a tin chloride (IV) pentahydrate are dissolved in the solution.

A crystal laminate structure includes a Ga.sub.2O.sub.3-based substrate, and a -Ga.sub.2O.sub.3-based single crystal film formed by epitaxial crystal growth on a principal surface of the Ga.sub.2O.sub.3-based substrate. The -Ga.sub.2O.sub.3-based single crystal film includes Cl and a dopant doped in parallel with the crystal growth at a concentration of not less than 110.sup.13 atoms/cm.sup.3 and not more than 5.010.sup.20 atoms/cm.sup.3.

It is an object of the present invention to provide a silicon carbide substrate having a low defect density that does not contaminate a process device and a silicon carbide semiconductor device including the silicon carbide substrate. A silicon carbide substrate according to the present invention is a silicon carbide substrate including: a substrate inner portion; and a substrate outer portion surrounding the substrate inner portion, wherein non-dopant metal impurity concentration of the substrate inner portion is 110.sup.16 cm.sup.3 or more, and a region of the substrate outer portion at least on a surface side thereof is a substrate surface region in which the non-dopant metal impurity concentration is less than 110.sup.16 cm.sup.3.

Single crystal CVD diamond material comprising a total nitrogen concentration of at least 5 ppm and a neutral single substitutional nitrogen, N.sub.s.sup.0, to total single substitutional nitrogen, N.sub.s, ratio of at least 0.7. Such a diamond is observed to have a relatively low amount of brown colouration despite the relatively high concentration of nitrogen. A method of making the single crystal diamond is also disclosed, the method including growing the CVD diamond in process gases comprising 60 to 200 ppm nitrogen, in addition to a carbon-containing gas, and hydrogen, wherein the ratio of carbon atoms in the carbon-containing gas to hydrogen atoms in the hydrogen gas is 0.5 to 1.5%.

This SiC epitaxial wafer includes: a SiC single crystal substrate of which a main surface has an off-angle of 0.4 to 5 with respect to (0001) plane; and an epitaxial layer provided on the SiC single crystal substrate, wherein the epitaxial layer has a basal plane dislocation density of 0.1 pieces/cm.sup.2 or less that is a density of basal plane dislocations extending from the SiC single crystal substrate to an outer surface and an intrinsic 3C triangular defect density of 0.1 pieces/cm.sup.2 or less.