The present technology relates to diamond materials and structures created using chemical vapor deposition techniques (i.e., creation of synthetic diamond). The chemical vapor deposited diamond includes a multiphase material comprising (a) a single crystalline matrix phase and (b) plurality of diamond grains, each of the plurality of diamond grains being crystallographically distinct from the single crystalline matrix phase.

The present technology relates to diamond materials and structures created using chemical vapor deposition techniques (i.e., creation of synthetic diamond). The chemical vapor deposited diamond includes a multiphase material comprising (a) a single crystalline matrix phase and (b) plurality of diamond grains, each of the plurality of diamond grains being crystallographically distinct from the single crystalline matrix phase.

A method for epitaxially growing a phosphorus doped silicon layer on a substrate is disclosed. Embodiments of the presently described method comprise exposing a substrate to a silicon precursor and to a phosphorus precursor, wherein the exposure of the substrate to the phosphorus precursor is done during an overlapping period with the exposure to the silicon precursor.

Single crystal CVD diamond material comprising a total nitrogen concentration of at least 5 ppm and a neutral single substitutional nitrogen, N.sub.s.sup.0, to total single substitutional nitrogen, N.sub.s, ratio of at least 0.7. Such a diamond is observed to have a relatively low amount of brown colouration despite the relatively high concentration of nitrogen. A method of making the single crystal diamond is also disclosed, the method including growing the CVD diamond in process gases comprising 60 to 200 ppm nitrogen, in addition to a carbon-containing gas, and hydrogen, wherein the ratio of carbon atoms in the carbon-containing gas to hydrogen atoms in the hydrogen gas is 0.5 to 1.5%.

A method of producing a synthetic diamond is disclosed. The method includes (a) capturing carbon dioxide from the atmosphere; (b) conducting electrolysis of water to provide hydrogen; (c) reacting the carbon dioxide obtained from step (a) with the hydrogen obtained from step (b) to produce methane; and (d) using the hydrogen obtained from step (b) and the methane obtained from step (c) to produce a synthetic diamond by chemical vapor deposition (CVD).

A CVD single crystal diamond material suitable for use in, or as, an optical device or element. It is suitable for use in a wide range of optical applications such as, for example, optical windows, laser windows, optical reflectors, optical refractors and gratings, and etalons. The CVD diamond material is produced by a CVD method in the presence of a controlled low level of nitrogen to control the development of crystal defects and thus achieve a diamond material having key characteristics for optical applications.

Provided is a method for manufacturing a single-crystal diamond, the method including the steps of: forming a protective film on at least a part of a surface of an auxiliary plate; preparing a diamond seed crystal substrate; disposing an auxiliary plate with a protective film that has the protective film formed on the auxiliary plate, and a diamond seed crystal substrate in a chamber; and growing a single-crystal diamond on a principal surface of the diamond seed crystal substrate by a chemical vapor deposition method while introducing a carbon-containing gas into the chamber.

A method of manufacturing synthetic diamond material using a chemical vapour deposition process, and a diamond obtained by such a method are described. The method comprises providing a freestanding synthetic single crystal diamond substrate wafer having a dislocation density of at least 10.sup.7 cm.sup.?2. The synthetic single crystal diamond substrate wafer is located over a substrate holder within a chemical vapour deposition reactor. Process gases are fed into the reactor, the process gases including a gas comprising carbon. Crack-free synthetic diamond material is grown on a surface of the single crystal diamond substrate wafer at a temperature of at least 900? C. to a thickness of at least 0.5 mm and with lateral dimensions of at least 4 mm by 4 mm.

A process for manufacturing a porous diamond having a tridimensional (3D) structure. The process comprises the steps of using a substrate with a pre-defined shape and a plurality of pores of a defined porosity shape and size, heating a reactant hydrocarbon gas and reactant hydrogen in a filament to form a product gas, depositing an activated carbon atom from the product gas onto the substrate, wherein the activated carbon atom reacts with the substrate to form a diamond structure on the substrate, and completely removing the substrate to obtain the 3D pure porous diamond structure, wherein the 3D pure porous diamond structure is formed entirely of diamond and is identical in shape and porosity shape and size of the plurality of pores as that of the substrate. The 3D pure porous diamond structure formed is of a controlled thickness and porosity, and devoid of the substrate.

A CVD single crystal diamond material suitable for use in, or as, an optical device or element. It is suitable for use in a wide range of optical applications such as, for example, optical windows, laser windows, optical reflectors, optical refractors and gratings, and etalons. The CVD diamond material is produced by a CVD method in the presence of a controlled low level of nitrogen to control the development of crystal defects and thus achieve a diamond material having key characteristics for optical applications.