A ceramic product includes a transparent ceramic panel having a non-planar geometry including a bend having a slippage plane, an increased haze, a non-uniform thickness, or a combination thereof. A method includes providing a transparent ceramic panel, heating the panel, bending the panel to conform to a non-planar geometry.

A ceramic product includes a transparent ceramic panel having a non-planar geometry including a bend having a slippage plane, an increased haze, a non-uniform thickness, or a combination thereof. A method includes providing a transparent ceramic panel, heating the panel, bending the panel to conform to a non-planar geometry.

Alumina is generally used as an inorganic filler, while spinel, which is known to be lower in thermal conductivity than alumina, is used in applications such as gems, fluorescence emitters, catalyst carriers, adsorbents, photocatalysts and heat-resistant insulating materials, but not expected to be used as a thermally conductive inorganic filler. Thus, an object of the invention is to provide spinel particles having excellent thermal conductive properties. The invention relates to a spinel particle including magnesium, aluminum and oxygen atoms and molybdenum and having a [111] plane crystallite diameter of 220 nm or more.

MnZn ferrite particles according to the present invention contain 44-60% by mass of Fe, 10-16% by mass of Mn and 1-11% by mass of Zn. The ferrite particles are single crystal bodies having an average particle diameter of 1-2,000 nm, and have polyhedral particle shapes, while having an average sphericity of 0.85 or more but less than 0.95.

The present invention provides a thin film structural body comprising a sapphire substrate having a principal plane of a {11-26} plane and a first epitaxial thin film which is grown directly on the principal plane of the sapphire substrate and has a principal plane of a {100} plane. As one example, in a fabrication method of the thin film structural body, a first epitaxial thin film is grown on a principal plane of a {11-26} plane of the sapphire substrate. The grown first epitaxial thin film has a principal plane of a {100} plane.

The present invention provides a thin film structural body comprising a sapphire substrate having a principal plane of a {11-26} plane and a first epitaxial thin film which is grown directly on the principal plane of the sapphire substrate and has a principal plane of a {100} plane. As one example, in a fabrication method of the thin film structural body, a first epitaxial thin film is grown on a principal plane of a {11-26} plane of the sapphire substrate. The grown first epitaxial thin film has a principal plane of a {100} plane.

A RAMO.sub.4 substrate that does not easily crack during or after the formation of group III nitride crystal includes a single crystal represented by general formula RAMO.sub.4 (wherein R represents one or more trivalent elements selected from the group consisting of Sc, In, Y, and lanthanoid elements, A represents one or more trivalent elements selected from the group consisting of Fe(III), Ga, and Al, and M represents one or more divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd). The RAMO.sub.4 substrate has a crystal plane with a curvature radius r of 52 m or more, and a square value of correlation coefficient of 0.81 or more. The curvature radius r is calculated as an absolute value from X-ray peak position i and measurement position Xi after the measurements of X-ray peak positions i at a plurality of positions Xi lying on a straight line passing through the center of the RAMO.sub.4 substrate. The correlation coefficient is a measure of correlation between and measurement position Xi.

A RAMO.sub.4 substrate that does not easily crack during or after the formation of group III nitride crystal includes a single crystal represented by general formula RAMO.sub.4 (wherein R represents one or more trivalent elements selected from the group consisting of Sc, In, Y, and lanthanoid elements, A represents one or more trivalent elements selected from the group consisting of Fe(III), Ga, and Al, and M represents one or more divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd). The RAMO.sub.4 substrate has a crystal plane with a curvature radius r of 52 m or more, and a square value of correlation coefficient of 0.81 or more. The curvature radius r is calculated as an absolute value from X-ray peak position i and measurement position Xi after the measurements of X-ray peak positions i at a plurality of positions Xi lying on a straight line passing through the center of the RAMO.sub.4 substrate. The correlation coefficient is a measure of correlation between and measurement position Xi.

[Problem] To provide a crystal laminate structure having a -Ga.sub.2O.sub.3 based single crystal film in which a dopant is included throughout the crystal and the concentration of the dopant can be set across a broad range. [Solution] In one embodiment of the present invention, provided is a crystal laminate structure 1 which includes: a Ga.sub.2O.sub.3 based substrate 10; and a -Ga.sub.2O.sub.3 based single crystal film 12 formed by epitaxial crystal growth on a primary face 11 of the Ga.sub.2O.sub.3 based substrate 10 and including Cl and a dopant doped in parallel with the crystal growth at a concentration of 110.sup.13 to 5.010.sup.20 atoms/cm.sup.3.

A film forming method of forming an oxide film on a substrate, wherein the oxide film has germanium doped therein and comprises a property of a conductor or a semiconductor, is disclosed herein. The film forming method may include supplying mist of a solution to a surface of the substrate while heating the substrate, wherein an oxide film material including a constituent element of the oxide film and an organic germanium compound may be dissolved in the solution.