The present disclosure provides a method for increasing luminescence uniformity and reducing afterglow of a Ce-doped gadolinium-aluminum-gallium garnet structure scintillation crystal, a crystal material and a detector. Sc ions are doped into the crystal material, and the Sc ions occupy at least an octahedral site. The effective segregation coefficient of active Ce ions is increased by a radius compensation effect of Sc—Ce ions and adjustment of lattice parameters, thereby the luminescence uniformity of the crystal is increased and the energy resolution is optimized; and at the same time, the potential barrier for Gd ions entering the octahedral site is increased, thereby the probability of the Gd ions entering the octahedral site is reduced, the density of point defects in the crystal is decreased, and the afterglow intensity is reduced. A general formula of the Ce-doped gadolinium-aluminum-gallium garnet structure scintillation crystal is {Gd.sub.1-x-y-pSc.sub.xCe.sub.yMe.sub.p}.sub.3[Al.sub.1-q].sub.5O.sub.12, 0<x≤0.1, 0<y<0.02, 0≤p≤0.02, 0.4≤q≤0.7.

The present disclosure provides a method for increasing luminescence uniformity and reducing afterglow of a Ce-doped gadolinium-aluminum-gallium garnet structure scintillation crystal, a crystal material and a detector. Sc ions are doped into the crystal material, and the Sc ions occupy at least an octahedral site. The effective segregation coefficient of active Ce ions is increased by a radius compensation effect of Sc—Ce ions and adjustment of lattice parameters, thereby the luminescence uniformity of the crystal is increased and the energy resolution is optimized; and at the same time, the potential barrier for Gd ions entering the octahedral site is increased, thereby the probability of the Gd ions entering the octahedral site is reduced, the density of point defects in the crystal is decreased, and the afterglow intensity is reduced. A general formula of the Ce-doped gadolinium-aluminum-gallium garnet structure scintillation crystal is {Gd.sub.1-x-y-pSc.sub.xCe.sub.yMe.sub.p}.sub.3[Al.sub.1-q].sub.5O.sub.12, 0<x≤0.1, 0<y<0.02, 0≤p≤0.02, 0.4≤q≤0.7.

The present disclosure provides a method for crystal growth. The method may include at one of the following operations: weighing reactants for growing an oxide crystal after a first preprocessing operation is performed on the reactants; placing the reactants, on which a second preprocessing operation has been performed, into a crystal growth device after an assembly preprocessing operation is performed on at least one component of the crystal growth device, wherein the at least one component of the crystal growth device includes a crucible, the assembly preprocessing operation includes at least one of a coating operation, an acid soaking and cleaning operation, or an impurity cleaning operation; introducing a protective gas into the crystal growth device after sealing the crystal growth device; activating the crystal growth apparatus to execute the crystal growth; and adding reactant supplements into the crystal growth device in real-time during the crystal growth.

A wavelength conversion member includes a sintered body of a phosphor. An average diameter of pores in an arbitrary cross section falls within a range of not less than 0.28 μm and not more than 0.98 μm. A ratio of an area of pores to a whole area in an arbitrary cross section falls within a range of not less than 0.04% and not more than 2.7%. An average diameter of grains of the phosphor in an arbitrary cross section falls within a range of not less than 1 μm and not more than 3 μm.

A wavelength conversion member includes a sintered body of a phosphor. An average diameter of pores in an arbitrary cross section falls within a range of not less than 0.28 μm and not more than 0.98 μm. A ratio of an area of pores to a whole area in an arbitrary cross section falls within a range of not less than 0.04% and not more than 2.7%. An average diameter of grains of the phosphor in an arbitrary cross section falls within a range of not less than 1 μm and not more than 3 μm.

A fluorescent member includes: a wavelength converter including an incidence part on which a light of a light source is incident and an output part from which a converted light subjected to wavelength conversion as a result of excitation by an incident light is output; and a reflecting part provided in at least a portion of a surface of the wavelength converter. The wavelength converter is comprised of a material whereby a degree of scattering of the light of the light source incident via the incidence part and traveling toward the output part is smaller than in the case of a polycrystalline material.

Provided is a method for producing a crystal fiber which can suppress the occurrence of stress birefringence even while distributing a light emission center so as to concentrate on a cross-sectional middle portion. The method for producing a crystal fiber comprises the steps of: using, as a preform, the crystal fiber comprising a light emission center that volatilizes from a melted portion upon the melting of a crystal, and heating a portion or a plurality of portions of the side of the preform, whereby the portion or the plurality of portions of the preform are melted such that only a given amount of the inside of the portion or the plurality of portions of the preform is not melted, to form the melted portion; and sequentially transferring the melted portion in the longitudinal direction of the preform, and cooling the melted portion, whereby the melted portion is continuously recrystallized to form a recrystallized region.

Provided is a method for producing a crystal fiber which can suppress the occurrence of stress birefringence even while distributing a light emission center so as to concentrate on a cross-sectional middle portion. The method for producing a crystal fiber comprises the steps of: using, as a preform, the crystal fiber comprising a light emission center that volatilizes from a melted portion upon the melting of a crystal, and heating a portion or a plurality of portions of the side of the preform, whereby the portion or the plurality of portions of the preform are melted such that only a given amount of the inside of the portion or the plurality of portions of the preform is not melted, to form the melted portion; and sequentially transferring the melted portion in the longitudinal direction of the preform, and cooling the melted portion, whereby the melted portion is continuously recrystallized to form a recrystallized region.

The object of the present invention is to provide a method for growing a large-size crystal by laser assisted heating and a dedicated device. The device comprises a laser core heating device, a xenon lamp surface heating device, a base, a vacuum cavity and etc. When a crystal is prepared, seeding and crystal growing are implemented by a xenon lamp-laser synergetic heating mode. According to the present invention, the structure and functions of the dedicated device are designed to introduce, at the center of a float melting zone, a laser heating source having high precision and strong controllability, so that a composite heating mode with xenon lamp surface heating and laser core heating is formed; and combined with the control of process, the method and the device solve the difficulty in growing a large-size test crystal bar and enable the growth of the crystal bar having a diameter up to 35 mm so as to facilitate engineering uses.

The object of the present invention is to provide a method for growing a large-size crystal by laser assisted heating and a dedicated device. The device comprises a laser core heating device, a xenon lamp surface heating device, a base, a vacuum cavity and etc. When a crystal is prepared, seeding and crystal growing are implemented by a xenon lamp-laser synergetic heating mode. According to the present invention, the structure and functions of the dedicated device are designed to introduce, at the center of a float melting zone, a laser heating source having high precision and strong controllability, so that a composite heating mode with xenon lamp surface heating and laser core heating is formed; and combined with the control of process, the method and the device solve the difficulty in growing a large-size test crystal bar and enable the growth of the crystal bar having a diameter up to 35 mm so as to facilitate engineering uses.