Patent classifications
C30B29/28
PHOSPHOR AND PRODUCTION METHOD THEREOF PHOSPHOR-INCLUDING MEMBER, AND LIGHT EMITTING DEVICE OR PROJECTOR
Provided is a particulate phosphor including a single crystal having a composition represented by a compositional formula (Y.sub.1-x-y-zLu.sub.xGd.sub.yCe.sub.z).sub.3+aAl.sub.5−aO.sub.12 (0≤x≤0.9994, 0≤y≤0.0669, 0.001≤z≤0.004, −0.016≤a≤0.315) and a particle diameter (D50) of not less than 20 μm. Also provided is a light-emitting device including a phosphor-including member that includes the phosphor and a sealing member including a transparent inorganic material sealing the phosphor or a binder including an inorganic material binding particles of the phosphor, and a light-emitting element that emits a blue light for exciting the phosphor.
PHOSPHOR AND PRODUCTION METHOD THEREOF PHOSPHOR-INCLUDING MEMBER, AND LIGHT EMITTING DEVICE OR PROJECTOR
Provided is a particulate phosphor including a single crystal having a composition represented by a compositional formula (Y.sub.1-x-y-zLu.sub.xGd.sub.yCe.sub.z).sub.3+aAl.sub.5−aO.sub.12 (0≤x≤0.9994, 0≤y≤0.0669, 0.001≤z≤0.004, −0.016≤a≤0.315) and a particle diameter (D50) of not less than 20 μm. Also provided is a light-emitting device including a phosphor-including member that includes the phosphor and a sealing member including a transparent inorganic material sealing the phosphor or a binder including an inorganic material binding particles of the phosphor, and a light-emitting element that emits a blue light for exciting the phosphor.
Light emitting device
A light emitting device includes a laser diode that emits a blue light, and a wavelength conversion part that absorbs a part of light emitted from the laser diode and converts a wavelength thereof. The wavelength conversion part includes a YAG-based single crystal phosphor. Irradiance of light emitted from the laser diode and irradiated on the wavelength conversion part is not less than 80 W/mm.sup.2.
Light emitting device
A light emitting device includes a laser diode that emits a blue light, and a wavelength conversion part that absorbs a part of light emitted from the laser diode and converts a wavelength thereof. The wavelength conversion part includes a YAG-based single crystal phosphor. Irradiance of light emitted from the laser diode and irradiated on the wavelength conversion part is not less than 80 W/mm.sup.2.
Method for Growing Large-size Crystal By Laser Assisted Heating and Dedicated Device
The object of the present invention is to provide a method for growing a large-size crystal by laser assisted heating and a dedicated device. The device comprises a laser core heating device, a xenon lamp surface heating device, a base, a vacuum cavity and etc. When a crystal is prepared, seeding and crystal growing are implemented by a xenon lamp-laser synergetic heating mode. According to the present invention, the structure and functions of the dedicated device are designed to introduce, at the center of a float melting zone, a laser heating source having high precision and strong controllability, so that a composite heating mode with xenon lamp surface heating and laser core heating is formed; and combined with the control of process, the method and the device solve the difficulty in growing a large-size test crystal bar and enable the growth of the crystal bar having a diameter up to 35 mm so as to facilitate engineering uses.
Method for Growing Large-size Crystal By Laser Assisted Heating and Dedicated Device
The object of the present invention is to provide a method for growing a large-size crystal by laser assisted heating and a dedicated device. The device comprises a laser core heating device, a xenon lamp surface heating device, a base, a vacuum cavity and etc. When a crystal is prepared, seeding and crystal growing are implemented by a xenon lamp-laser synergetic heating mode. According to the present invention, the structure and functions of the dedicated device are designed to introduce, at the center of a float melting zone, a laser heating source having high precision and strong controllability, so that a composite heating mode with xenon lamp surface heating and laser core heating is formed; and combined with the control of process, the method and the device solve the difficulty in growing a large-size test crystal bar and enable the growth of the crystal bar having a diameter up to 35 mm so as to facilitate engineering uses.
Two single crystals based phoswich detector for discriminating various kinds of radiations
The present invention discloses single crystal based phoswich detector for discriminating various kinds of radiations. The invented phoswich detector comprises a single crystal based scintillator having at least a pair of single crystals with identical refractive indices and different scintillation kinetics and a photo-sensor coupled to the single crystal based scintillator to detect a scintillation light pulse generated through interaction of radiation elements with the pair of the single crystals for discrimination of different kinds of radiation elements based on a dissimilarity in the scintillation light pulse shapes generated through the interactions.
Single crystalline Cs.SUB.2.U.SUB.4.O.SUB.12 .and processes of making and using same
The present invention relates to single crystalline Cs.sub.2U.sub.4O.sub.12, hydrothermal growth processes of making such single crystals and methods of using such single crystals. In particular, Applicants disclose single crystalline Cs.sub.2U.sub.4O.sub.12 having a P2.sub.1/c structure and a process of making and using same. Unlike other single crystalline Cs.sub.2U.sub.4O.sub.12 structures the P2.sub.1/c structure has a different set of atomic coordinates which gives a different framework which in turn provides the altered performance of such single crystals.
SINGLE CRYSTAL YIG NANOFILM FABRICATED BY A METAL ORGANIC DECOMPOSITION EPITAXIAL GROWTH PROCESS
A MOD YIG epitaxial process for fabricating YIG nanofilms which, when deposited on GGG substrates, have single crystal epitaxial properties. The films may have thicknesses of 50 nm for a single layer, 100 nm for two layers, and 130 nm for three layers, and have a gyromagnetic ratio of 2.80 MHz per Oe, Gilbert damping ranges from 0.0003 to 0.001, 4M$ values between 1650 G to 1780 G, coercivity from 1 Oe. to 5 Oe, and surface roughness of RMS 0.20 nm for up to 10 layers. Fabrication is economical and uses only a spinner, a drying station (RT to 150 C temperature control), and a quartz tube furnace that accommodates a flowing atmosphere of research grade oxygen, thereby eliminating the need for high vacuum deposition chambers.
Phosphor, method for manufacturing same, and light-emitting device
A phosphor-containing member includes a transparent member, and a plurality of granular single crystal phosphors dispersed in the transparent member. Each of the plurality of granular single crystal phosphors includes a YAG crystal as a mother crystal. The plurality of granular single crystal phosphors are prepared by crushing the YAG crystal. The YAG crystal has a composition represented by a formula of Y.sub.3-x-yGd.sub.xCe.sub.yAl.sub.5O.sub.12-w (0.03x0.2, 0.003y0.2, 0.2w0.2). Reduction of fluorescence intensity of the phosphors is less than 3% when an excitation light wavelength is 460 nm and a temperature is increased from 25 C. to 100 C.