Provided are a practical method for manufacturing TAG single crystal. The method of manufacturing a garnet type crystal brings a raw material solution into contact with a substrate formed of a Y.sub.3Al.sub.5O.sub.12 crystal or a Dy.sub.3Al.sub.5O.sub.12 crystal and performs liquid phase epitaxial growth. The garnet type crystal is represented by (Tb.sub.3-x-yR.sub.xBi.sub.y) Al.sub.5O.sub.12 (R is one or more elements selected from Y or a lanthanoid (La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu), 0x, and 0y)).

Provided are a practical method for manufacturing TAG single crystal. The method of manufacturing a garnet type crystal brings a raw material solution into contact with a substrate formed of a Y.sub.3Al.sub.5O.sub.12 crystal or a Dy.sub.3Al.sub.5O.sub.12 crystal and performs liquid phase epitaxial growth. The garnet type crystal is represented by (Tb.sub.3-x-yR.sub.xBi.sub.y) Al.sub.5O.sub.12 (R is one or more elements selected from Y or a lanthanoid (La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu), 0x, and 0y)).

Disclosed are a method and a device for preparing a single-crystal cladding. The method may include preparing an amorphous material; melting the amorphous material to form an amorphous melt; submerging an optical fiber in the amorphous melt; forming an amorphous cladding around a periphery of the optical fiber; and obtaining the single-crystal cladding by performing a crystallization process on the amorphous cladding. The device may include an amorphous material preparation component configured to prepare an amorphous material; an amorphous cladding preparation component configured to melt the amorphous material to form an amorphous melt, submerge an optical fiber in the amorphous melt, and form an amorphous cladding around a periphery of the optical fiber based on the amorphous melt and the optical fiber; and a single-crystal cladding preparation assembly configured to perform a crystallization process on the amorphous cladding to obtain a single-crystal cladding.

Disclosed are a method and a device for preparing a single-crystal cladding. The method may include preparing an amorphous material; melting the amorphous material to form an amorphous melt; submerging an optical fiber in the amorphous melt; forming an amorphous cladding around a periphery of the optical fiber; and obtaining the single-crystal cladding by performing a crystallization process on the amorphous cladding. The device may include an amorphous material preparation component configured to prepare an amorphous material; an amorphous cladding preparation component configured to melt the amorphous material to form an amorphous melt, submerge an optical fiber in the amorphous melt, and form an amorphous cladding around a periphery of the optical fiber based on the amorphous melt and the optical fiber; and a single-crystal cladding preparation assembly configured to perform a crystallization process on the amorphous cladding to obtain a single-crystal cladding.

The present invention provide an orderly patterned remote phosphor crystal material and method for preparation the material and its application, which adopts short-pulse laser to make micro-structure arrays on the surface of phosphor crystal material to enhance the light extraction efficiency of the LED based on the material. The present invention overcomes the phosphor crystal material's properties of hard and dry/wet etching resistance and simplifies the processing steps, which accelerate the processing and improve the producing efficiency. The present invention is able to be performed under room temperature and environment friendly and the micro-structure is stable, which has broad application prospects in white LED field.

The present invention provide an orderly patterned remote phosphor crystal material and method for preparation the material and its application, which adopts short-pulse laser to make micro-structure arrays on the surface of phosphor crystal material to enhance the light extraction efficiency of the LED based on the material. The present invention overcomes the phosphor crystal material's properties of hard and dry/wet etching resistance and simplifies the processing steps, which accelerate the processing and improve the producing efficiency. The present invention is able to be performed under room temperature and environment friendly and the micro-structure is stable, which has broad application prospects in white LED field.

Disclosed are synthetic garnets and related devices that can be used in radio-frequency (RF) applications. In some embodiments, such RF devices can include garnets having reduced or substantially nil Yttrium or other rare earth metals. Such garnets can be configured to yield high dielectric constants, and ferrite devices, such as TM-mode circulators/isolators, formed from such garnets can benefit from reduced dimensions. Further, reduced or nil rare earth content of such garnets can allow cost-effective fabrication of ferrite-based RF devices. In some embodiments, such ferrite devices can include other desirable properties such as low magnetic resonance linewidths. Examples of fabrication methods and RF-related properties are also disclosed.

A bismuth-substituted rare earth iron garnet single crystal suitable for Faraday rotators and optical isolators with reduced insertion loss due to suppressed valence fluctuation of Fe ions is provided. The bismuth-substituted rare earth iron garnet single crystal of the present invention is characterized by the composition formula (Tb.sub.aLn.sub.bBi.sub.cMg.sub.3?(a+b+c))(Fe.sub.dGa.sub.eTi.sub.fPt.sub.5?(d+e+f))O.sub.12. In the composition formula above, 0.02?f?0.05, 0.02?{3?(a+b+c)}?0.08, and ?0.01?{3?(a+b+c)}?{f+5?(d+e+f)}?0.01. Ln is a rare earth element and may be selected from Eu, Gd, Ho, Tm, Yb, Lu, and Y.

A bismuth-substituted rare earth iron garnet single crystal suitable for Faraday rotators and optical isolators with reduced insertion loss due to suppressed valence fluctuation of Fe ions is provided. The bismuth-substituted rare earth iron garnet single crystal of the present invention is characterized by the composition formula (Tb.sub.aLn.sub.bBi.sub.cMg.sub.3?(a+b+c))(Fe.sub.dGa.sub.eTi.sub.fPt.sub.5?(d+e+f))O.sub.12. In the composition formula above, 0.02?f?0.05, 0.02?{3?(a+b+c)}?0.08, and ?0.01?{3?(a+b+c)}?{f+5?(d+e+f)}?0.01. Ln is a rare earth element and may be selected from Eu, Gd, Ho, Tm, Yb, Lu, and Y.

A lasing medium having a tailored dopant concentration and a method of fabrication thereof is disclosed. The lasing medium has a single crystal having a continuous body having a selected length, wherein the crystal comprises dopant distributed along the length of the body to define a dopant concentration profile. In one embodiment, the dopant concentration profile results in a uniform heating profile. A method of fabricating a laser crystal having a tailored dopant concentration profile includes arranging a plurality of polycrystalline segments together to form an ingot, the polycrystalline segments each having dopant distributed, providing a crystal seed at a first end of the ingot, and moving a heating element along the ingot starting from the first end to a second end of the ingot, the moving heating element creating a moving molten region within the ingot while passing therealong.