C01B23/0068

Method for argon production via cold pressure swing adsorption

Methods and systems for purifying argon from a crude argon stream are disclosed, employing pressure swing adsorption at cold temperatures from 186 C. to 20 C.; more preferably from 150 C. to 50 C.; and most preferably from 130 C. to 80 C. with oxygen-selective zeolite adsorbent. In some embodiments, the oxygen-selective zeolite adsorbent is a 4A zeolite, a chabazite, or a combination thereof.

METHOD OF RECYCLING HELIUM FROM WASTE GAS IN SEMICONDUCTOR PROCESS

A method of recycling helium from a waste gas generated in a semiconductor process includes forming a first treatment gas by treating helium-containing waste gas emitted from a semiconductor process facility by using a scrubber module, transporting the first treatment gas to a purification facility, forming a first helium gas with a first purity by fractionating the first treatment gas in the purification facility, forming a second helium gas with a second purity by treating the first helium gas by using a back-end purification module in the purification facility, and providing the second helium gas to the semiconductor process facility.

Separation of krypton gas from xenon gas using natural clinoptilolite

A system and method for separating Kr gas from Xe gas utilizing natural clinoptilolite. The method includes separating Kr gas from Xe gas by selectively adsorbing Kr gas. The method includes providing a vessel comprising a Kr adsorbent bed comprising a natural clinoptilolite adsorbent. A feed gas comprising Kr gas and Xe gas is exposed to the Kr adsorbent bed for a residence time to selectively adsorb sufficient Kr gas from the feed gas to form a Xe enriched gas raffinate product. The Xe enriched gas raffinate product is removed from the vessel. Thereafter, the Kr adsorbent bed is regenerated to release a Kr enriched gas extract product.

WASTE GAS TREATMENT DEVICE, WASTE GAS TREATMENT METHOD, AND WASTE GAS ADSORPTION AND RECOVERY SYSTEM INCLUDING THE SAME

Provided is a waste gas treatment device including a waste gas inlet configured to introduce waste gas discharged from a semiconductor processing chamber and an adsorption unit configured to adsorb competitive adsorption gas from the waste gas flowing from the waste gas inlet, and configured to adsorb xenon (Xe) from the waste gas from which the competitive adsorption gas has been removed, and recover the adsorbed xenon. Also provided are waste gas treatment methods, and waste gas adsorption and recovery systems including the present waste gas treatment devices.