A manufacturing apparatus of carbide of the present disclosure includes a tank, a lid, a molten salt crucible, an electrode assembly, an air intake device and a heating device. The lid is connected to the tank to jointly delimit a compartment. The molten salt crucible is disposed in the compartment for containing a salt. The electrode assembly includes a working electrode and a counter electrode. An end of the working electrode and an end of the counter electrode both contact the salt in the molten salt crucible, and the end of the working electrode contacting the salt is for fixing a reactant tablet. The air intake device is configured to exchange the air in the compartment. The heating device is configured to heat the compartment.

A silicon carbide-graphite composite is described, including (i) interior bulk graphite material and (ii) exterior silicon carbide matrix material, wherein the interior bulk graphite material and exterior silicon carbide matrix material inter-penetrate one another at an interfacial region therebetween, and wherein graphite is present in inclusions in the exterior silicon carbide matrix material. Such material may be formed by contacting a precursor graphite article with silicon monoxide (SiO) gas under chemical reaction conditions that are effective to convert an exterior portion of the precursor graphite article to a silicon carbide matrix material in which graphite is present in inclusions therein, and wherein the silicon carbide matrix material and interior bulk graphite material interpenetrate one another at an interfacial region therebetween. Such silicon carbide-graphite composite is usefully employed in applications such as implant hard masks in manufacturing solar cells or other optical, optoelectronic, photonic, semiconductor and microelectronic products, as well as in ion implantation system materials, components, and assemblies, such as beam line assemblies, beam steering lenses, ionization chamber liners, beam stops, and ion source chambers.

A silicon carbide-graphite composite is described, including (i) interior bulk graphite material and (ii) exterior silicon carbide matrix material, wherein the interior bulk graphite material and exterior silicon carbide matrix material inter-penetrate one another at an interfacial region therebetween, and wherein graphite is present in inclusions in the exterior silicon carbide matrix material. Such material may be formed by contacting a precursor graphite article with silicon monoxide (SiO) gas under chemical reaction conditions that are effective to convert an exterior portion of the precursor graphite article to a silicon carbide matrix material in which graphite is present in inclusions therein, and wherein the silicon carbide matrix material and interior bulk graphite material interpenetrate one another at an interfacial region therebetween. Such silicon carbide-graphite composite is usefully employed in applications such as implant hard masks in manufacturing solar cells or other optical, optoelectronic, photonic, semiconductor and microelectronic products, as well as in ion implantation system materials, components, and assemblies, such as beam line assemblies, beam steering lenses, ionization chamber liners, beam stops, and ion source chambers.

A silicon carbide-graphite composite is described, including (i) interior bulk graphite material and (ii) exterior silicon carbide matrix material, wherein the interior bulk graphite material and exterior silicon carbide matrix material inter-penetrate one another at an interfacial region therebetween, and wherein graphite is present in inclusions in the exterior silicon carbide matrix material. Such material may be formed by contacting a precursor graphite article with silicon monoxide (SiO) gas under chemical reaction conditions that are effective to convert an exterior portion of the precursor graphite article to a silicon carbide matrix material in which graphite is present in inclusions therein, and wherein the silicon carbide matrix material and interior bulk graphite material interpenetrate one another at an interfacial region therebetween. Such silicon carbide-graphite composite is usefully employed in applications such as implant hard masks in manufacturing solar cells or other optical, optoelectronic, photonic, semiconductor and microelectronic products, as well as in ion implantation system materials, components, and assemblies, such as beam line assemblies, beam steering lenses, ionization chamber liners, beam stops, and ion source chambers.

A silicon carbide-graphite composite is described, including (i) interior bulk graphite material and (ii) exterior silicon carbide matrix material, wherein the interior bulk graphite material and exterior silicon carbide matrix material inter-penetrate one another at an interfacial region therebetween, and wherein graphite is present in inclusions in the exterior silicon carbide matrix material. Such material may be formed by contacting a precursor graphite article with silicon monoxide (SiO) gas under chemical reaction conditions that are effective to convert an exterior portion of the precursor graphite article to a silicon carbide matrix material in which graphite is present in inclusions therein, and wherein the silicon carbide matrix material and interior bulk graphite material interpenetrate one another at an interfacial region therebetween. Such silicon carbide-graphite composite is usefully employed in applications such as implant hard masks in manufacturing solar cells or other optical, optoelectronic, photonic, semiconductor and microelectronic products, as well as in ion implantation system materials, components, and assemblies, such as beam line assemblies, beam steering lenses, ionization chamber liners, beam stops, and ion source chambers.

The present invention relates to a method of preparing ultra-pure silicon carbide in which a super-porous spherical silica aerogel is used as a silica raw material. By preparing the silica aerogel particles using low-cost water glass, a reaction area with respect to a carbon raw material is increased to enable low-temperature synthesis of silicon carbide, the size and shape of silicon carbide powder may be uniformly controlled to prepare ultra-pure silicon carbide, and economic efficiency and productivity of the silicon carbide synthesis may be improved. Thus, it is expected that the silicon carbide powder prepared by the preparation method of the present invention may be provided as an optimized raw material for the preparation of silicon carbide sintered body and single crystal (ingot).

The present invention relates to a method of preparing ultra-pure silicon carbide in which a super-porous spherical silica aerogel is used as a silica raw material. By preparing the silica aerogel particles using low-cost water glass, a reaction area with respect to a carbon raw material is increased to enable low-temperature synthesis of silicon carbide, the size and shape of silicon carbide powder may be uniformly controlled to prepare ultra-pure silicon carbide, and economic efficiency and productivity of the silicon carbide synthesis may be improved. Thus, it is expected that the silicon carbide powder prepared by the preparation method of the present invention may be provided as an optimized raw material for the preparation of silicon carbide sintered body and single crystal (ingot).

The present application provides a system and method for producing a silicon-containing product by using a silicon sludge, which is produced by a cutting silicon material with a diamond wire. The method utilizes a high oxide layer on the surface of a silicon waste particle produced during diamond wire cutting. The surface oxide undergoes a disproportionation reaction with adjacent internal elemental silicon to form silicon monoxide, which is removed in a vapor to achieve a physical chemical reaction with a metal, a halogen gas, a hydrogen halide gas or hydrogen to form silicon-containing products of higher added value. The process realizes the large-scale, high-efficiency, energy-saving, continuous and low-cost complete recycling of silicon waste produced by diamond wire cutting of silicon material.

The present application provides a system and method for producing a silicon-containing product by using a silicon sludge, which is produced by a cutting silicon material with a diamond wire. The method utilizes a high oxide layer on the surface of a silicon waste particle produced during diamond wire cutting. The surface oxide undergoes a disproportionation reaction with adjacent internal elemental silicon to form silicon monoxide, which is removed in a vapor to achieve a physical chemical reaction with a metal, a halogen gas, a hydrogen halide gas or hydrogen to form silicon-containing products of higher added value. The process realizes the large-scale, high-efficiency, energy-saving, continuous and low-cost complete recycling of silicon waste produced by diamond wire cutting of silicon material.

Silicon particles for active materials and electro-chemical cells are provided. The active materials comprising silicon particles described herein can be utilized as an electrode material for a battery. In certain embodiments, the composite material includes greater than 0% and less than about 90% by weight silicon particles, the silicon particles having an average particle size between about 10 nm and about 40 μm, wherein the silicon particles have surface coatings comprising silicon carbide or a mixture of carbon and silicon carbide, and greater than 0% and less than about 90% by weight of one or more types of carbon phases, wherein at least one of the one or more types of carbon phases is a substantially continuous phase.