An electronic device comprising a stack structure comprising one or more stacks of materials and one or more silicon carbide materials adjacent to the one or more stacks of materials. The materials of the one or more stacks comprise a single chalcogenide material and one or more of a conductive carbon material, a conductive material, and a hardmask material. The one or more silicon carbide materials comprises silicon carbide, silicon carboxide, silicon carbonitride, silicon carboxynitride, and also comprise silicon-carbon covalent bonds. The one or more silicon carbide materials is configured as a liner or as a seal. Additional electronic devices are disclosed, as are related systems and methods of forming an electronic device.

The present invention relates to nanoparticulate stoichiometric doped or non-doped silicon carbide SiC in the form of secondary particles, which consist of agglomerates of SiC primary particles, wherein the primary particles have a particle size in the range of 40-100 nm and the secondary particles have an average size of 1-10 μm. Furthermore, the present invention relates to an anode of a secondary lithium-ion battery containing the SiC according to the invention and a secondary lithium-ion battery having this anode.

The present invention relates to nanoparticulate stoichiometric doped or non-doped silicon carbide SiC in the form of secondary particles, which consist of agglomerates of SiC primary particles, wherein the primary particles have a particle size in the range of 40-100 nm and the secondary particles have an average size of 1-10 μm. Furthermore, the present invention relates to an anode of a secondary lithium-ion battery containing the SiC according to the invention and a secondary lithium-ion battery having this anode.

A photo-curable liquid composition for additive manufacturing of silicon-containing carbide ceramic includes a polymethylvinylsilane (PMVS) resin that has photo-reactivity over a first photo-wavelength absorption range and a photo-initiator additive mixed with the PMVS resin. The photo-initiator additive has photo-reactivity over a second photo-wavelength absorption range that has an overlapping wavelength range with the first photo-wavelength absorption range. The PMVS and the photo-initiator additive are reactive to polymerize upon exposure to radiation having a wavelength in the overlapping wavelength range.

A photo-curable liquid composition for additive manufacturing of silicon-containing carbide ceramic includes a polymethylvinylsilane (PMVS) resin that has photo-reactivity over a first photo-wavelength absorption range and a photo-initiator additive mixed with the PMVS resin. The photo-initiator additive has photo-reactivity over a second photo-wavelength absorption range that has an overlapping wavelength range with the first photo-wavelength absorption range. The PMVS and the photo-initiator additive are reactive to polymerize upon exposure to radiation having a wavelength in the overlapping wavelength range.

An electronic device comprising a stack structure comprising one or more stacks of materials and one or more silicon carbide materials adjacent to the one or more stacks of materials. The materials of the one or more stacks comprise a single chalcogenide material and one or more of a conductive carbon material, a conductive material, and a hardmask material. The one or more silicon carbide materials comprises silicon carbide, silicon carboxide, silicon carbonitride, silicon carboxynitride, and also comprise silicon-carbon covalent bonds. The one or more silicon carbide materials is configured as a liner or as a seal. Additional electronic devices are disclosed, as are related systems and methods of forming an electronic device.

The present disclosure provide a method for producing large granular high-purity α-phase silicon carbide powders using a silicon dioxide/carbon composite, the method including: producing a gel in which the carbonaceous compound is dispersed in a silicon dioxide network structure through a sol-gel process using starting materials including liquid phase silicon containing compounds and liquid phase carbonaceous compounds; subjecting the gel to first heat treatment to thermally decompose the carbon carbonaceous compound, thereby producing a silicon dioxide/carbon composite including nano-sized carbon particles; and subjecting the silicon dioxide/carbon composite to second heat treatment at a higher temperature than that of the first heat treatment to obtain large granular high-purity α-phase silicon carbide powders.

The present disclosure provide a method for producing large granular high-purity α-phase silicon carbide powders using a silicon dioxide/carbon composite, the method including: producing a gel in which the carbonaceous compound is dispersed in a silicon dioxide network structure through a sol-gel process using starting materials including liquid phase silicon containing compounds and liquid phase carbonaceous compounds; subjecting the gel to first heat treatment to thermally decompose the carbon carbonaceous compound, thereby producing a silicon dioxide/carbon composite including nano-sized carbon particles; and subjecting the silicon dioxide/carbon composite to second heat treatment at a higher temperature than that of the first heat treatment to obtain large granular high-purity α-phase silicon carbide powders.

Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Vapor deposition processes and articles formed by those processes utilizing such high purity SiOC and SiC.

Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Vapor deposition processes and articles formed by those processes utilizing such high purity SiOC and SiC.