The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably includes at least the following steps: Introducing at least a first source gas into a process chamber, said first source gas including Si, introducing at least one second source gas into the process chamber, the second source gas including C, electrically energizing at least one separator element disposed in the process chamber to heat the separator element, setting a deposition rate of more than 200 ?m/h, where a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and where the surface of the deposition element is heated to a temperature in the range between 1300? C. and 1800? C.

Provided are a polycrystalline SiC compact capable of achieving uniform plasma etching when used as electrodes and a method for manufacturing the same. A polycrystalline SiC compact has a major surface in which Wa (0 to 10 mm) is 0.00 to 0.05 m or less, Wa (10 to 20 mm) is 0.13 m or less, and Wa (20 to 30 mm) is 0.20 m or less.

The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably includes at least the following steps: introducing at least a first source gas into a process chamber, said first source gas including Si, introducing at least one second source gas into the process chamber, the second source gas including C, electrically energizing at least one separator element disposed in the process chamber to heat the separator element, setting a deposition rate of more than 200 ?m/h, wherein a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and wherein the surface of the deposition element is heated to a temperature in the range between 1300? C. and 1800? C.

The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably includes at least the following steps: introducing at least a first source gas into a process chamber, said first source gas including Si, introducing at least one second source gas into the process chamber, the second source gas including C, electrically energizing at least one separator element disposed in the process chamber to heat the separator element, setting a deposition rate of more than 200 ?m/h, wherein a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and wherein the surface of the deposition element is heated to a temperature in the range between 1300? C. and 1800? C.

A reheating collection device for a gas phase process is provided with a container elongated in an axial direction along an axis to define a chamber, an inflow path and an exhaust path respectively in communication with the chamber and apart in the axial direction from each other, and a heater heating the chamber between the inflow path and the exhaust path.

A reheating collection device for a gas phase process is provided with a container elongated in an axial direction along an axis to define a chamber, an inflow path and an exhaust path respectively in communication with the chamber and apart in the axial direction from each other, and a heater heating the chamber between the inflow path and the exhaust path.

Disclosed herein are methods of forming substantially crystalline, dense silicon carbide fibers from infusible polysilazane fibers by utilizing a single stage pyrolysis. The pyrolysis is performed using a continuous process in a single furnace with a constant atmospheric condition. Also disclosed are substantially crystalline, dense silicon carbide fibers formed by these methods.

The method for producing non-core beta silicon carbide fibers includes four steps. The first step is spinning of multifilament polymeric fiber by melt-extrusion of polycarbosilane. The second step is thermooxidative cross-linking for which the produced spun polymeric fibers are cured in an oxidation furnace at a temperature of 175-250 degrees C. at a heating rate of 3-10 degrees C./h until their weight is increased by 6-15%. The third step is carbonization of the produced cured polymeric fibers with the conversion into the ceramic phase. The fourth step is finishing of the produced beta silicon carbide fiber. The effect of the invention is producing non-core silicon carbide fibers, improving their strength performance, improving resistance to high temperatures and their high creep resistance, stable fiber properties, optimal average diameter of fibers, absence of foreign impurities in the fiber composition.

The method for producing non-core beta silicon carbide fibers includes four steps. The first step is spinning of multifilament polymeric fiber by melt-extrusion of polycarbosilane. The second step is thermooxidative cross-linking for which the produced spun polymeric fibers are cured in an oxidation furnace at a temperature of 175-250 degrees C. at a heating rate of 3-10 degrees C./h until their weight is increased by 6-15%. The third step is carbonization of the produced cured polymeric fibers with the conversion into the ceramic phase. The fourth step is finishing of the produced beta silicon carbide fiber. The effect of the invention is producing non-core silicon carbide fibers, improving their strength performance, improving resistance to high temperatures and their high creep resistance, stable fiber properties, optimal average diameter of fibers, absence of foreign impurities in the fiber composition.

Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SIC) materials having 3-nines, 4-nines, 6-nines and greater purity. Vapor deposition processes and articles formed by those processes utilizing such high purity SiOC and SiC.