C03C17/3671

COPPER-ALLOY CAPPING LAYERS FOR METALLIZATION IN TOUCH-PANEL DISPLAYS

In various embodiments, electronic devices such as touch-panel displays incorporate interconnects featuring a conductor layer and, disposed above the conductor layer, a capping layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.

TREATING SULFIDE GLASS SURFACES AND MAKING SOLID STATE LAMINATE ELECTRODE ASSEMBLIES

Methods for making solid-state laminate electrode assemblies include methods of forming a solid electrolyte interphase (SEI) by ion implanting nitrogen and/or phosphorous into the glass surface by ion implantation.

Thin-film transistor and method of forming an electrode of a thin-film transistor

In various embodiments, electronic devices such as touch-panel displays incorporate interconnects featuring a conductor layer and, disposed above the conductor layer, a capping layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.

TREATING SULFIDE GLASS SURFACES AND MAKING SOLID STATE LAMINATE ELECTRODE ASSEMBLIES

Methods for making solid-state laminate electrode assemblies include methods of forming a solid electrolyte interphase (SEI) by ion implanting nitrogen and/or phosphorous into the glass surface by ion implantation.

THROUGH ELECTRODE SUBSTRATE AND SEMICONDUCTOR DEVICE
20210028090 · 2021-01-28 · ·

A through electrode substrate includes a substrate having a through hole extending through between a first face and a second face, a diameter of the through hole not having a minimum value inside the through hole; and a conductor arranged inside the through hole, wherein the through hole has a shape having a value obtained by summing a first to an eighth inclination angle at a first to an eighth position, respectively, of an inner face of the through hole of 8.0 or more, each of the first to the eighth inclination angle is an angle of the inner face with respect to a center axis of the through hole, and the first to the eighth position correspond to positions at distances of 6.25%, 18.75%, 31.25%, 43.75%, 56.25%, 68.75%, 81.25%, and 93.75%, respectively, from the first face in a section from the first face to the second face.

Treating sulfide glass surfaces and making solid state laminate electrode assemblies

Methods for making solid-state laminate electrode assemblies include methods of forming a solid electrolyte interphase (SEI) by ion implanting nitrogen and/or phosphorous into the glass surface by ion implantation.

Through electrode substrate and semiconductor device
10847444 · 2020-11-24 · ·

A through electrode substrate includes a substrate having a through hole extending through between a first face and a second face, a diameter of the through hole not having a minimum value inside the through hole; and a conductor arranged inside the through hole, wherein the through hole has a shape having a value obtained by summing a first to an eighth inclination angle at a first to an eighth position, respectively, of an inner face of the through hole of 8.0 or more, each of the first to the eighth inclination angle is an angle of the inner face with respect to a center axis of the through hole, and the first to the eighth position correspond to positions at distances of 6.25%, 18.75%, 31.25%, 43.75%, 56.25%, 68.75%, 81.25%, and 93.75%, respectively, from the first face in a section from the first face to the second face.

Oxide sintered material and method of manufacturing the same, sputtering target, and method of manufacturing semiconductor device

There are provided an oxide sintered material containing an In.sub.2O.sub.3 crystal phase, a Zn.sub.4In.sub.2O.sub.7 crystal phase and a ZnWO.sub.4 crystal phase, and a method of producing the oxide sintered material. The method includes forming the oxide sintered material by sintering a molded body containing In, W and Zn, and forming the oxide sintered material including placing the molded body at a first constant temperature selected from a temperature range of 500 C. or more and 1000 C. or less for 30 minutes or longer.

CONDUCTIVE AND DIFFUSIVE ANTIREFLECTION SURFACE

The invention relates to a scattering and conductive anti-reflection surface, comprising a continuous electrically conductive material of variable thickness deposited on a textured surface so as to render the assembly anti-reflective and scattering.

Dynamic Glass and Method of Formation

The present disclosure enables high contrast, fast, uniform, and color-neutral dynamic-glass elements based on uniform and reversible electrodeposition of metals a surface of the element. Elements in accordance with the present disclosure include a surface-modified transparent-conductor-based window electrode, wherein the surface modification of the window electrode includes a nucleation layer that is anchored to the transparent conductor via a non-metallic adhesion layer. In some embodiments, a plurality of traces is disposed on and electrically connected to the window electrode to reduce the voltage drop across the total area of the element, where the traces have a core made of a low-resistivity material.