A dielectric composition includes a dielectric grain including a perovskite compound and a first segregation phase including at least Ca, Al, Si, and O.

A ceramic electronic component includes a body including a dielectric layer and an internal electrode; and an external electrode disposed on the body and connected to the internal electrode. The dielectric layer has a perovskite structure represented by a general formula ABO.sub.3 as a main phase, and includes a region in which Dy is solid solubilized. In the region in which the Dy is solid solubilized, an X-ray count of Dy solid-solubilized in an A-site of the perovskite structure measured by using Scanning Transmission Electron Microscopy-Energy Dispersive X-ray Spectroscopy (STEM-EDS) is AD, an X-ray count of Dy solid-solubilized in a B-site of the perovskite structure is BD, and an average value of AD/BD is 1.6 or more and 2.0 or less.

A manufacturing method of a ceramic electronic device includes forming a multilayer structure by stacking a plurality of stack units, each of the stack units having a structure in which a pattern of metal conductive paste is provided on a dielectric green sheet including a dielectric material, the metal conductive paste including a metallic material of which a main component is Ni and a co-material of which a main component is barium titanate, the metal conductive paste of each of the stack units being alternately shifted, and firing the multilayer structure. FWHM of the metallic material)/(FWHM of the co-material) is 0.550 or less. The FWHM is of a (111) face evaluated by powder X-ray diffraction. An average particle diameter of the metallic material before the firing is 120 nm or less.

A dielectric composition includes a main ingredient having a perovskite structure represented by ABO.sub.3, where A is at least one of Ba, Sr, and Ca and B is at least one of Ti, Zr, and Hf, and a first accessory ingredient. The first accessory ingredient comprises 0.1 mole or more of a rare earth element, 0.02 mole or more of Nb, and 0.25 mole or more and 0.9 mole or less of Mg, a sum of contents of the rare earth element and Nb is 1.5 mole or less.

A capacitor includes a stack and an external electrode located on a surface of the stack. The stack includes a plurality of dielectric layers and a plurality of internal electrode layers alternately stacked on one another. Crystal grains include first crystal grains having a small grain size and second crystal grains having a larger grain size. The first crystal grains satisfy 0.13 μm≤d1<0.30 μm, where d1 is the grain size of the first crystal grains. The second crystal grains satisfy 0.30 μm≤d2<0.50 μm, where d2 is the grain size of the second crystal grains. The second crystal grains have a higher additive element content than the first crystal grains.

A capacitor includes a stack and an external electrode located on a surface of the stack. The stack includes a plurality of dielectric layers and a plurality of internal electrode layers alternately stacked on one another. Crystal grains include first crystal grains having a small grain size and second crystal grains having a larger grain size. The first crystal grains satisfy 0.13 μm≤d1<0.30 μm, where d1 is the grain size of the first crystal grains. The second crystal grains satisfy 0.30 μm≤d2<0.50 μm, where d2 is the grain size of the second crystal grains. The second crystal grains have a higher additive element content than the first crystal grains.

A ceramic electronic device includes a multilayer structure in which a plurality of dielectric layers and a plurality of internal electrode layers are alternately stacked. Each of the plurality of dielectric layers includes ceramic grains of a main component thereof expressed by (Ba.sub.1−x−yCa.sub.xSr.sub.y)(Ti.sub.1−zZr.sub.z)O.sub.3 (0<x≤0.2, 0≤y≤0.1, 0≤z≤0.1). D3<D1<D2 is satisfied when an average grain diameter of the ceramic grains of the main component of the plurality of dielectric layers in a section in which each two internal electrode layers is D1, an average grain diameter of the ceramic grains of the main component of first dielectric layers which are located at different height positions from the internal electrode layers is D2, an average grain diameter of the ceramic grains of the main component of second dielectric layers which are located at same height positions of the internal electrode layers is D3.

A ceramic electronic device includes a multilayer chip in which a dielectric layer and an internal electrode layer are alternately stacked. Concentration peaks of two or more types of metals different from a main component metal of the internal electrode layer exist at different positions in a stacking direction of the dielectric layer and the internal electrode layer, between the dielectric layer and the internal electrode layer.

An interposer of a multilayer ceramic capacitor includes a first through-hole in which a first pass-through conductive portion is provided on an inside wall thereof. A first surface side of the first through-hole is filled with a first conductive joining material that recessed at a central portion thereof as the first through-hole is seen from a second surface toward a first surface. The interposer includes a second through-hole in which a second pass-through conductive portion is provided on an inside wall thereof. A first surface side of the second through-hole is filled with a second conductive joining material that is recessed at a central portion thereof as the second through-hole is seen from a second surface toward a first surface.

A ceramic electronic component includes: a body including dielectric layers and internal electrodes; and external electrodes disposed on the body and connected to the internal electrodes, wherein the dielectric layer includes a plurality of first secondary phases, the first secondary phase is a secondary phase including Ni, Mg, Al, Si, and O, and at least one of the plurality of first secondary phases has a ratio of a major axis length to a minor axis length of 4 or more.