A piezoelectric ceramic may be slightly deformed by firing, and a manufacturing method therefor, and an electronic component are disclosed. There is provided a piezoelectric ceramic including a plurality of crystal grains including a lead zirconate titanate-type crystal containing Zn, and Bi, and crystal grain boundaries existing between a plurality of the crystal grains, wherein a plurality of the crystal grains include first crystal grains, and wherein the first crystal grains have a content of at least one element of Zn and Bi present in the inside of the first crystal grains that is smaller than the content of the at least one element present in an area including the crystal grain boundaries that are in contact with the crystal grains. The piezoelectric ceramic is slightly deformed by firing and is capable of forming an electronic component which has little warp or deformation even if it is thin.

A composition used for forming a PZT-based piezoelectric film formed of Mn and Nb co-doped composite metal oxides is provided, in which the composition includes PZT-based precursors so that a metal atom ratio (Pb:Mn:Nb:Zr:Ti) in the composition satisfies (1.00 to 1.25):(0.002 to 0.056):(0.002 to 0.056):(0.40 to 0.60):(0.40 to 0.60), a rate of Mn is from 0.20 to 0.80 when the total of metal atom rates of Mn and Nb is 1, a rate of Zr is from 0.40 to 0.60 when the total of metal atom rates of Zr and Ti is 1, and the total rate of Zr and Ti is from 0.9300 to 0.9902 when the total of metal atom rates of Mn, Nb, Zr, and Ti is 1.

Provided is a piezoelectric film formed by a vapor phase growth method, the piezoelectric film containing: a perovskite oxide in which a perovskite oxide represented by the following formula P is doped with Si in an amount of from 0.2 mol % to less than 0.5 mol %, wherein a ratio of a peak intensity of a pyrochlore phase to a sum of peak intensities in respective plane orientations of (100), (001), (110), (101) and (111) of a perovskite phase measured by an X-ray diffraction method is 0.25 or less:
A.sub.1+?[(Zr.sub.xTi.sub.1?x).sub.1?aNb.sub.a]O.sub.yFormula P wherein, in formula P, A is an A-site element primarily containing Pb; Zr, Ti, and Nb are B-site elements; x is more than 0 but less than 1; a is 0.1 or more but less than 0.3.

Provided is a piezoelectric film formed by a vapor phase growth method, the piezoelectric film containing: a perovskite oxide in which a perovskite oxide represented by the following formula P is doped with Si in an amount of from 0.2 mol % to less than 0.5 mol %, wherein a ratio of a peak intensity of a pyrochlore phase to a sum of peak intensities in respective plane orientations of (100), (001), (110), (101) and (111) of a perovskite phase measured by an X-ray diffraction method is 0.25 or less:
A.sub.1+?[(Zr.sub.xTi.sub.1?x).sub.1?aNb.sub.a]O.sub.yFormula P wherein, in formula P, A is an A-site element primarily containing Pb; Zr, Ti, and Nb are B-site elements; x is more than 0 but less than 1; a is 0.1 or more but less than 0.3.

A piezoelectric film of the present invention is a piezoelectric film including a perovskite oxide represented by the following formula (P), in which crystal phases of the perovskite oxide include tetragonal crystals and rhombohedral crystals at a ratio that satisfies the following formula (1).
A.sub.1+?[(Zr.sub.xTi.sub.1?x).sub.1?aNb.sub.a]O.sub.y(P)
0.70?rhombohedral crystals/(rhombohedral crystals+tetragonal crystals)?0.95 (1), where, in the formula (P), A is an A-site element primarily containing Pb, and Zr, Ti, and Nb are B-site elements. x is equal to or higher than 0.4 and lower than 1, excluding x of equal to or higher than 0.51 and equal to or lower than 0.53. a is equal to or higher than 0.08.

A piezoelectric thin film is formed by adding a donor element to lead zirconate titanate. In the piezoelectric thin film, a molar ratio of lead to a total sum of zirconium and titanium is 105% or higher, and, when positive and negative coercive electric fields in polarization and electric field hysteresis are referred to as Ec (+) and Ec (?), respectively, a value of |Ec (+)|/|Ec (?)| is 0.5 or more and 1.5 or less.

A liquid discharge head includes a nozzle plate, a substrate, a diaphragm, and a piezoelectric element. The nozzle plate includes a nozzle from which liquid is discharged. The substrate is disposed on the nozzle plate and includes a pressure chamber communicating with the nozzle. The diaphragm is disposed on a first side of the substrate opposite a second side of the substrate on which the nozzle plate is disposed, the diaphragm constituting one wall of the pressure chamber. The piezoelectric element is disposed on the diaphragm to deform the diaphragm to discharge liquid in the pressure chamber from the nozzle. The piezoelectric element includes a first electrode, a piezoelectric film, and a second electrode. The first electrode is disposed on the diaphragm. The piezoelectric film is disposed on the first electrode.

A liquid discharge head includes a nozzle plate, a substrate, a diaphragm, and a piezoelectric element. The nozzle plate includes a nozzle from which liquid is discharged. The substrate is disposed on the nozzle plate and includes a pressure chamber communicating with the nozzle. The diaphragm is disposed on a first side of the substrate opposite a second side of the substrate on which the nozzle plate is disposed, the diaphragm constituting one wall of the pressure chamber. The piezoelectric element is disposed on the diaphragm to deform the diaphragm to discharge liquid in the pressure chamber from the nozzle. The piezoelectric element includes a first electrode, a piezoelectric film, and a second electrode. The first electrode is disposed on the diaphragm. The piezoelectric film is disposed on the first electrode.

Provided is a piezoelectric film having a perovskite type crystal structure represented by the following Formula (P), in which a piezoelectric constant d.sub.31 (pm/V), a relative dielectric constant (), and a dielectric loss tan () satisfy (d.sub.31).sup.2/(tan 1000)>3. In addition, a method for manufacturing the above piezoelectric film is provided.

Pb.sub.x[(Zr.sub.aTi.sub.1-a).sub.1-yNb.sub.y]O.sub.z(P)

(in Formula (P), x represents a lead content, y represents a Nb content (B site doping amount), z represents an oxygen content, a represents a Zr/Ti ratio, and y>0.14, and although x=1.0 and z=3 is standard, numerical values of x and z may deviate from 1.0 and 3, respectively, within a range where a perovskite structure can be adopted.)

Provided is a piezoelectric film having a perovskite type crystal structure represented by the following Formula (P), in which a piezoelectric constant d.sub.31 (pm/V), a relative dielectric constant (), and a dielectric loss tan () satisfy (d.sub.31).sup.2/(tan 1000)>3. In addition, a method for manufacturing the above piezoelectric film is provided.

Pb.sub.x[(Zr.sub.aTi.sub.1-a).sub.1-yNb.sub.y]O.sub.z(P)

(in Formula (P), x represents a lead content, y represents a Nb content (B site doping amount), z represents an oxygen content, a represents a Zr/Ti ratio, and y>0.14, and although x=1.0 and z=3 is standard, numerical values of x and z may deviate from 1.0 and 3, respectively, within a range where a perovskite structure can be adopted.)