Patent classifications
C
C04
C04B
35/00
C04B35/515
C04B35/56
C04B35/565
C04B35/575
C04B35/5755
C04B35/5755
Process for sintering silicon carbide
A process for sintering silicon carbide is provided which includes the steps of providing a silicon carbide powder of silicon carbide granules; purifying the silicon carbide powder; subjecting the purified silicon carbide powder to a gel-casting process; removing the gel-cast part from the mold; drying the gel-cast part; obtaining a dried cast ceramic part (a green body) which is capable of green machining into a final desired shape; firing the green body in an oven at temperatures ranging from about 100 C. to about 1900 C. to remove or burn out any polymer remaining in the ceramic; and sintering the green body at temperatures ranging from about 1600 C. to less than about 2200 C.