A cBN sintered material comprising cBN particles and a binder phase, in which the binder phase contains AlN and AlB.sub.2, a content proportion of cBN particles is 70 to 97 vol %, cBN sintered material has a volume resistivity up to 5×10.sup.−3 Ωcm, a rate of a peak intensity derived from Al with respect to a peak intensity derived from cBN particles is less than 1.0%, cBN particles include fine particles and coarse particles, coarse particles optionally include ultra-coarse particles, with respect to the entire cBN particles, a content proportion α of fine particles is from 10 vol %, a content proportion β of coarse particles is from 30 vol %, a content proportion γ of ultra-coarse particles is 25 vol % or less, and a total of the content proportion α of fine particles and the content proportion β of coarse particles is 50 to 100 vol %.

A cBN sintered material comprising cBN particles and a binder phase, in which the binder phase contains AlN and AlB.sub.2, a content proportion of cBN particles is 70 to 97 vol %, cBN sintered material has a volume resistivity up to 5×10.sup.−3 Ωcm, a rate of a peak intensity derived from Al with respect to a peak intensity derived from cBN particles is less than 1.0%, cBN particles include fine particles and coarse particles, coarse particles optionally include ultra-coarse particles, with respect to the entire cBN particles, a content proportion α of fine particles is from 10 vol %, a content proportion β of coarse particles is from 30 vol %, a content proportion γ of ultra-coarse particles is 25 vol % or less, and a total of the content proportion α of fine particles and the content proportion β of coarse particles is 50 to 100 vol %.

An electrostatic chuck is provided, the electrostatic chuck includes a base; and an insulating layer, an electrode layer, a first dielectric layer, and a second dielectric layer sequentially stacked on the base. The first dielectric layer is aluminum oxide (Al.sub.2O.sub.3) or aluminum nitride (AlN). A material of the second dielectric layer is different from a material of the first dielectric layer, and the second dielectric layer includes titanium element, IVA group element, and oxygen element.

An electrostatic chuck is provided, the electrostatic chuck includes a base; and an insulating layer, an electrode layer, a first dielectric layer, and a second dielectric layer sequentially stacked on the base. The first dielectric layer is aluminum oxide (Al.sub.2O.sub.3) or aluminum nitride (AlN). A material of the second dielectric layer is different from a material of the first dielectric layer, and the second dielectric layer includes titanium element, IVA group element, and oxygen element.

A method of providing a self-healing coating includes providing substrate, applying a layer of an aluminum-containing MAX phase material and another material to the substrate. The method includes exposing the layer to a temperature greater than 2000° F. to form alpha aluminum.

A method of providing a self-healing coating includes providing substrate, applying a layer of an aluminum-containing MAX phase material and another material to the substrate. The method includes exposing the layer to a temperature greater than 2000° F. to form alpha aluminum.

Disclosed are devices and methods for semiconductor devices including a ceramic substrate. Aspects disclosed include semiconductor device including an electrical component, an alumina ceramic substrate and a substrate-film. The substrate-film is deposited on the alumina ceramic substrate. The substrate-film has a planar substrate-film surface opposite the alumina ceramic substrate. The electrical component is formed on the substrate-film surface of the substrate-film on the alumina ceramic substrate.

Disclosed are devices and methods for semiconductor devices including a ceramic substrate. Aspects disclosed include semiconductor device including an electrical component, an alumina ceramic substrate and a substrate-film. The substrate-film is deposited on the alumina ceramic substrate. The substrate-film has a planar substrate-film surface opposite the alumina ceramic substrate. The electrical component is formed on the substrate-film surface of the substrate-film on the alumina ceramic substrate.

A cutting tool comprising a base material and a coating, wherein the coating includes a first layer having a multilayer structure in which a first unit layer and a second unit layer are alternately stacked; a thickness of the first unit layer is 2 to 50 nm; a thickness of the second unit layer is 2 to 50 nm; a thickness of the first layer is 1.0 m or more and 20 m or less, the first unit layer is composed of Ti.sub.aAl.sub.bB.sub.cN, and the second unit layer is composed of Ti.sub.dAl.sub.eB.sub.fN, wherein 0.49a0.70, 0.190.40, 0.10<c0.20, a+b+c=1.00, 0.39d0.60, 0.29e0.50, 0.10<f0.20, d+e+f=1.00, 0.05ad0.20, and 0.05eb0.20 are satisfied, and a percentage of the number of atoms of titanium to the total number of atoms of titanium, aluminum and boron is 45% or more in the first layer.

An article is described herein that includes: a glass, glass-ceramic or ceramic substrate comprising a primary surface; at least one of an optical film and a scratch-resistant film disposed over the primary surface; and an easy-to-clean (ETC) coating comprising a fluorinated material that is disposed over an outer surface of the at least one of an optical film and a scratch-resistant film. The at least one of an optical film and a scratch-resistant film comprises an average hardness of 10 GPa or more. Further, the outer surface of the at least one of an optical film and a scratch-resistant film comprises a surface roughness (R.sub.q) of less than 1.0 nm.