A metal matrix composite comprises and/or consists of a uniform distribution of calcined ceramic particles having an average particle size of between 0.30 and 0.99 microns and a metal or alloy uniformly distributed with the ceramic particles and wherein the ceramic particles include oxides of two separate metals selected from the group consisting of Al, Li, Be, Pb, Fe, Ag, Au, Sn, Mg, Ti, Cu, and Zn, and in which said ceramic particles comprise at least 15 volume percent of the metal matrix sintered together and wherein said metal-matrix being machinable with a high speed steel (HSS) bit for greater than about one minute without excessive wear to the bit.

A metal matrix composite comprises and/or consists of a uniform distribution of calcined ceramic particles having an average particle size of between 0.30 and 0.99 microns and a metal or alloy uniformly distributed with the ceramic particles and wherein the ceramic particles include oxides of two separate metals selected from the group consisting of Al, Li, Be, Pb, Fe, Ag, Au, Sn, Mg, Ti, Cu, and Zn, and in which said ceramic particles comprise at least 15 volume percent of the metal matrix sintered together and wherein said metal-matrix being machinable with a high speed steel (HSS) bit for greater than about one minute without excessive wear to the bit.

Disclosed are devices and methods for semiconductor devices including a ceramic substrate. Aspects disclosed include semiconductor device including an electrical component, an alumina ceramic substrate and a substrate-film. The substrate-film is deposited on the alumina ceramic substrate. The substrate-film has a planar substrate-film surface opposite the alumina ceramic substrate. The electrical component is formed on the substrate-film surface of the substrate-film on the alumina ceramic substrate.

Disclosed are devices and methods for semiconductor devices including a ceramic substrate. Aspects disclosed include semiconductor device including an electrical component, an alumina ceramic substrate and a substrate-film. The substrate-film is deposited on the alumina ceramic substrate. The substrate-film has a planar substrate-film surface opposite the alumina ceramic substrate. The electrical component is formed on the substrate-film surface of the substrate-film on the alumina ceramic substrate.

A method for forming an oxidation protection system on a composite structure may comprise applying a ceramic layer slurry to the composite structure and heating the composite structure to form a ceramic layer on the composite structure. The ceramic layer slurry may comprise aluminum and silicon carbide powder in a sol. The ceramic layer may comprise alumina, silicon carbide and silicon oxycarbide.

A method for forming an oxidation protection system on a composite structure may comprise applying a ceramic layer slurry to the composite structure and heating the composite structure to form a ceramic layer on the composite structure. The ceramic layer slurry may comprise aluminum and silicon carbide powder in a sol. The ceramic layer may comprise alumina, silicon carbide and silicon oxycarbide.

The invention is a method for treating a solid substrate, made from a first material, of metal or ceramic type, the method comprising placing the substrate in contact with a liquid metal, while the substrate is exposed to an ultrasonic wave called a power wave. At the level of a surface of the substrate, the power density is greater than a cavitation threshold of the liquid metal. Such exposure improves the wettability of the substrate surface by the liquid metal.

Provided are an aluminum-silicon-carbide composite having high thermal conductivity, low thermal expansion, and low specific gravity and a method for producing the composite. Provided is an aluminum-silicon-carbide composite formed by impregnating a porous silicon carbide molded body with an aluminum alloy. The ratio of silicon carbide in the composite is 60 vol % or more, and the composite contains 60-75 mass % of silicon carbide having a particle diameter of 80 m or more and 800 m or less, 20-30 mass % of silicon carbide having a particle diameter of 8 m or more and less than 80 m, and 5-10 mass % of silicon carbide having a particle diameter of less than 8 m.

Provided are an aluminum-silicon-carbide composite having high thermal conductivity, low thermal expansion, and low specific gravity and a method for producing the composite. Provided is an aluminum-silicon-carbide composite formed by impregnating a porous silicon carbide molded body with an aluminum alloy. The ratio of silicon carbide in the composite is 60 vol % or more, and the composite contains 60-75 mass % of silicon carbide having a particle diameter of 80 m or more and 800 m or less, 20-30 mass % of silicon carbide having a particle diameter of 8 m or more and less than 80 m, and 5-10 mass % of silicon carbide having a particle diameter of less than 8 m.

In a method of making a gaseous emissions treatment component, a green ceramic mix is extruded through a die to form an extrusion having cells extending along the extrusion, the cells being bounded by walls dividing adjacent cells from one another. In concert with the extruding, metal is fed through the die with the extruded mix. A length of the extrusion and associated metal is then cut off and fired to form the component.