Patent classifications
C04B2235/3213
Method of metallizing ferrite ceramics and component comprising a metallized ferrite ceramic
The invention relates to a process for metallizing ferrite ceramics, which comprises the following steps: arrangement of a contact element composed of copper or a copper alloy on a surface of the ferrite ceramic, melting of the contact element at least in the region in which the contact element contacts the surface of the ferrite ceramic, and cooling of the contact element and the ferrite ceramic to below the melting point of copper or the copper alloy.
Ferrite sintered magnet
There is provided a ferrite sintered magnet having a high residual magnetic flux density. A ferrite sintered magnet 2 includes a plurality of main phase particles 5 including ferrite having a hexagonal structure, the number of core-shell structured particles 5A having a core 7 and a shell 9 covering the core 7, among the main phase particles 5, is smaller than the number of the main phase particles 5 other than the core-shell structured particles 5A.
Luminescent ceramic for a light emitting device
A semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region is combined with a ceramic layer which is disposed in a path of light emitted by the light emitting layer. The ceramic layer is composed of or includes a wavelength converting material such as a phosphor. Luminescent ceramic layers according to embodiments of the invention may be more robust and less sensitive to temperature than prior art phosphor layers. In addition, luminescent ceramics may exhibit less scattering and may therefore increase the conversion efficiency over prior art phosphor layers.
Polycrystalline diamond compact (PDC) cutting element having multiple catalytic elements
A polycrystalline diamond compact useful for wear, cutting, drilling, drawing and like applications is provided with a first diamond region remote from the working surface which has a metallic catalyzing material and a second diamond region adjacent to or including the working surface containing a non-metallic catalyst and the method of making such a compact is provided. This compact is particularly useful in high temperature operations, such as hard rock drilling because of the improved thermal stability at the working surface.
MAGNETIC COMPOSITES, METHOD OF MAKING THE SAME, AND ANTENNA DEVICE COMPRISING THE MAGNETIC COMPOSITES
A magnetic composite includes a polymeric substrate and a magnetic material including a Z-type phase and represented by the following Chemical Formula:
Ba.sub.1.5-xSr.sub.1.5-xCa.sub.2xM.sub.2Fe.sub.24O.sub.41 Chemical Formula
wherein, in the Chemical Formula, M is at least one selected from Co, Ni, Cu, Mg, Mn, Ti, Al, Zn, and Zr, and 0≦x<0.3.
CERAMIC SUBSTRATE AND METHOD FOR PRODUCTION THEREOF
A ceramic substrate and a method for production thereof are provided, in which the ceramic substrate includes a composite of : a first ceramic layer including Sr anorthite and Al.sub.2O.sub.3 or an oxide dielectric with a dielectric constant higher than that of Al.sub.2O.sub.3; and a second ceramic layer including Sr anorthite and cordierite and having a dielectric constant lower than that of the first ceramic layer.
Method for producing sintered ferrite magnet, and sintered ferrite magnet
A sintered ferrite magnet comprising (a) a ferrite phase having a hexagonal M-type magnetoplumbite structure comprising Ca, an element R which is at least one of rare earth elements and indispensably includes La, an element A which is Ba and/or Sr, Fe, and Co as indispensable elements, the composition of metal elements of Ca, R, A, Fe and Co being represented by the general formula of Ca.sub.1-x-yR.sub.xA.sub.yFe.sub.2n-zCo.sub.z, wherein the atomic ratios (1-x-y), x, y and z of these elements and the molar ratio n meet the relations of 0.3≦(1-x-y)≦0.65, 0.2≦x≦0.65, 0≦y≦0.2, 0.03≦z≦0.65, and 4≦n≦7, and (b) a grain boundary phase indispensably containing Si, the amount of Si being more than 1% by mass and 1.8% or less by mass (calculated as SiO.sub.2) based on the entire sintered ferrite magnet, and its production method.
Oxide ceramic and ceramic electronic component
An oxide ceramic having a principal component formed of a ferrite compound containing at least Sr, Co, and Fe, and zirconium in an amount of 0.05 to 1.0 wt. % on an oxide equivalent basis, and a ceramic electronic component using the oxide ceramic.
Piezoelectric material, piezoelectric element, multilayered piezoelectric element, manufacturing method for multilayered piezoelectric element, liquid discharge head, liquid discharge device, ultrasonic motor, optical device, vibration device, dust removing device, imaging device, and electronic device
Provided is a piezoelectric material that is free of lead and potassium, has satisfactory insulation property and piezoelectricity, and has a high Curie temperature. The piezoelectric material includes a perovskite-type metal oxide represented by the following general formula (1): General formula (1) (Na.sub.xM.sub.1-y)(Zr.sub.z(Nb.sub.1-wTa.sub.w).sub.y(Ti.sub.1-vSn.sub.v).sub.(1-y-z))O.sub.3 where M represents at least any one of Ba, Sr, and Ca, and relationships of 0.80≦x≦0.95, 0.85≦y≦0.95, 0<z≦0.03, 0≦v<0.2, 0≦w<0.2, and 0.05≦1−y−z≦0.15 are satisfied.
Lithium ion-conducting garnet-like compounds
A lithium ion-conducting compound, having a garnet-like crystal structure, and having the general formula: Li.sub.n[A.sub.(3-a′-a″)A′.sub.(a′)A″.sub.(a″)][B.sub.(2-b′-b″)B′.sub.(b′)B″.sub.(b″)][C′.sub.(c′)C″.sub.(c″)]O.sub.12, where A, A′, A″ stand for a dodecahedral position of the crystal structure, where A stands for La, Y, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm and/or Yb, A′ stands for Ca, Sr and/or Ba, A″ stands for Na and/or K, 0<a′<2 and 0<a″<1, where B, B′, B″ stand for an octahedral position of the crystal structure, where B stands for Zr, Hf and/or Sn, B′ stands for Ta, Nb, Sb and/or Bi, B″ stands for at least one element selected from the group including Te, W and Mo, 0<b′<2 and 0<b″<2, where C and C″ stand for a tetrahedral position of the crystal structure, where C stands for Al and Ga, C″ stands for Si and/or Ge, 0<c′<0.5 and 0<c″<0.4, and where n=7+a′+2.Math.a″−b′−2.Math.b″−3.Math.c′−4.Math.c″ and 5.5<n<6.875.