A process for the manufacture of a refractory block including more than 80% zirconia, in percentage by weight based on the oxides. The process includes the following successive stages: melting, under reducing conditions, of a charge including more than 50% zircon, in percentage by weight, such as to reduce the zircon and obtain a molten material, application of oxidizing conditions to the molten material, casting of the molten material, and cooling until at least partial solidification of the molten material in the form of a block. Also, the process can include heat treatment of the block.

An oxide ion conductor has a X.sub.3Z.sub.2(TO.sub.4).sub.3 structure, where X is a divalent metal element, Z is a trivalent metal element, and T is a tetravalent metal element, and has a composition expressed by (X.sub.1-xA.sub.x).sub.3(Z.sub.1-yB.sub.y).sub.2(T.sub.1-zC.sub.z).sub.3O.sub.12+δ where the element X is Ca, Fe, Gd, Ba, Sr, Mn, and/or Mg, the element Z is Al, Cr, Fe, Mn, V, Ga, Co, Ni, Ru, Rh, and/or Ir, the element T is Si and/or Ge, an element A is La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and/or Sr, an element B is Zn, Mn, Co, Ru, and/or Rh, and an element C is Si, Al, Ga, and/or Sn, 0≤x≤0.2, 0≤y≤0.2, and 0≤z≤0.2 are satisfied, and δ is a value securing electrical neutrality.

Grain-oriented electrical steel sheet excellent in magnetic properties and excellent in adhesion of a primary coating to a base steel sheet, an annealing separator utilized for manufacture of grain-oriented electrical steel sheet, and a method for manufacturing grain-oriented electrical steel sheet are proposed. The grain-oriented electrical steel sheet is provided with a base metal steel sheet containing comprising a predetermined chemical composition and a primary coating formed on a surface of the base steel sheet and comprising Mg.sub.2SiO.sub.4 as a main constituent. The primary coating satisfies the conditions of (1) the number density D3 of the Al concentrated region: 0.020 to 0.180/μm.sup.2, (2) (total area S5 of regions which is anchoring oxide layer regions and is also Al concentrated regions)/(total area S3 of Al concentrated regions)≥33%, (3) distance H5 of mean value of length in thickness direction of regions which is anchoring oxide layer regions and is also Al concentrated regions minus H0: 0.4 to 4.0 μm, (4) (total area S1 of anchoring oxide layer regions)/(observed area S0)≥15%.

In an aspect, a ferrite composition comprises a Ru—Co.sub.2Z ferrite having the formula: (Ba.sub.3-xM.sub.x)Co.sub.2(M′Ru).sub.yFe.sub.24-2y-zO.sub.41, wherein M is at least one of Sr, Pb, or Ca; M′ is at least one of Co, Zn, Mg, or Cu; x is 1 to 3; y is greater than 0 to 2; and z is −4 to 4. In another aspect, an article comprises the ferrite composition. In yet another aspect, method of making the ferrite composition comprises mixing ferrite precursor compounds comprising Fe, Ba, Co, and Ru; and sintering the ferrite precursor compounds in an oxygen atmosphere to form the Ru—Co.sub.2Z ferrite.

A ceramic powder material containing: a first garnet-type compound containing Li, La, and Zr; and a second garnet-type compound containing Li, La, and Zr and having a composition different from a composition of the first garnet-type compound, in which the first garnet-type compound and the second garnet-type compound are represented by Formula [1] Li.sub.7-(3x+y)M1.sub.xLa.sub.3Zr.sub.2-yM2.sub.yO.sub.12, where M1 is Al or Ga, M2 is Nb or Ta, the first garnet-type compound satisfies 0≤(3x+y)≤0.5, and the second garnet-type compound satisfies 0.5<(3x+y)≤1.5.

A refractory object may include a zircon body that is intentionally doped with a dopant including an alkaline earth element and aluminum. The refractory object can have an improved creep deformation rate. In an embodiment, the refractory object can have a creep deformation rate of not greater than about 1.8 E-5 h.sup.−1 at a temperature of 1350° C. and a stress of 2 MPa. In another embodiment, the zircon body may include an amorphous phase including an alkaline earth metal element.

A dielectric composition includes a main phase and a Ca—Si—P—O segregation phase. The main phase includes a main component expressed by ABO.sub.3. “A” includes at least one selected from calcium and strontium. “B” includes at least one selected from zirconium, titanium, hafnium, and manganese. The Ca—Si—P—O segregation phase includes at least calcium, silicon, and phosphorus.

A ferrite sintered magnet including ferrite grains having a hexagonal crystal structure. The ferrite grains satisfy 0.56≤W≤0.68 where W is an average value of circularities of the ferrite grains in a cross section parallel to an axis of easy magnetization.

The present invention aims to provide a scintillator which has a short fluorescence decay time, whose fluorescence intensity after a period of time following radiation irradiation is low, and which shows largely improved light-transmittance. A scintillator represented by the following General Formula (1), the scintillator including Zr, having a Zr content of not less than 1500 ppm by mass therein, and being a block of a sintered body. Q.sub.xM.sub.yO.sub.3z:A . . . (1) (wherein in General Formula (1), Q includes at least one or more kinds of divalent metallic elements; M includes at least Hf; and x, y, and z independently satisfy 0.5≤x≤1.5, 0.5≤y≤1.5, and 0.7≤z≤1.5, respectively).

A stacked structure including: a single crystal substrate and, single crystal material on the single crystal substrate, wherein the single crystal material has a same crystallographic orientation as a crystallographic orientation of the single crystal substrate. Also a method of forming the stacked structure, a ceramic electronic component, and a device.