A manufacturing method of ceramic powder includes: synthesizing barium titanate powder from barium carbonate, titanium dioxide, manganese carbonate, and one of ammonium molybdate and tungsten oxide, wherein: a solid solution amount of the donor element is 0.05 mol or more and 0.3 mol or less; a solid solution amount of the accepter element with respect to the barium titanate is 0.02 mol or more and 0.2 mol or less on a presumption that the amount of the barium titanate is 100 mol and the acceptor element is converted into an oxide; and relationships y≥−0.0003x+1.0106, y≤−0.0002x+1.0114, 4≤x≤25 and y≤1.0099 are satisfied when a specific surface area of the ceramic powder is “x” and an axial ratio c/a of the ceramic powder is “y”.

A dielectric ceramic composition and a multilayer ceramic capacitor including the same are provided. The dielectric ceramic composition includes a BaTiO.sub.3-based base material main ingredient and an accessory ingredient, where the accessory ingredient includes dysprosium (Dy) and niobium (Nb) as first accessory ingredients. A total content of the Dy and Nb is greater than 0.2 mol and less than or equal to 1.5 mol based on 100 mol of titanium (Ti) of the base material main ingredient.

A sintered composite ceramic includes: a lithium-garnet major phase; and a lithium-rich minor phase, such that the lithium-rich minor phase has Li.sub.xTiO.sub.(x+4)/2, with 0.66≤x≤4. The sintered composite ceramic may exhibit a relative density of at least 90% of a theoretical maximum density of the ceramic, an ionic conductivity of at least 0.35 mS.Math.cm.sup.−1, or a critical current density (CCD) of at least 1.0 mA.Math.cm.sup.−2.

A dielectric substance includes a core-shell grain having a twin crystal structure. An interface of the twin crystal structure of the core-shell grain extends from a shell on one side, passes through a core, and extends to the shell on the other side.

A multi-layer ceramic capacitor has a structure where the dispersion, nd, of average grain size of the dielectric grains constituting the dielectric layer (a value (D90/D10) obtained by dividing D90 which is a grain size including 90% cumulative abundance of grains by D10 which is a grain size including 10% cumulative abundance of grains) is smaller than 4.

Provided are a dielectric including an oxide represented by Formula 1 below and having a cubic crystal structure, a capacitor including the dielectric, a semiconductor device including the dielectric, and a method of manufacturing the dielectric.
(Rb.sub.xA.sub.1-x)(B.sub.yTa.sub.1-y)O.sub.3-δ  <Formula 1> In Formula 1 above, A is K, Na, Li, Cs, or a combination thereof, B is Nb, V, or a combination thereof, and 0.1≤x≤0.2, 0≤y≤0.2, and 0≤δ≤0.5 are satisfied.

A dielectric ceramic composition and a multilayer ceramic capacitor including the same are provided. The dielectric ceramic composition includes a BaTiO.sub.3-based base material main ingredient and an accessory ingredient, where the accessory ingredient includes dysprosium (Dy) and niobium (Nb) as first accessory ingredients. A total content of the Dy and Nb is less than or equal to 1.5 mol, based on 100 mol of Ti of the base material main ingredient, and a content of the Dy satisfies 0.7 mol<Dy<1.1 mol, based on 100 mol of Ti of the base material main ingredient.

Embodiments of synthetic garnet materials having advantageous properties, especially for below resonance frequency applications, are disclosed herein. In particular, embodiments of the synthetic garnet materials can have high Curie temperatures and dielectric constants while maintaining low magnetization. These materials can be incorporated into isolators and circulators, such as for use in telecommunication base stations.

A method of forming a composite material for use as an isolator or circulator in a radiofrequency device comprises providing a low temperature fireable outer material, the low fireable outer material having a garnet or scheelite structure, inserting a high dielectric constant inner material having a dielectric constant above 30 within an aperture in the low temperature fireable outer material, and co-firing the lower temperature fireable outer material and the high dielectric constant inner material together at temperature between 650-900° C. to shrink the low temperature fireable outer material around an outer surface of the high dielectric constant inner material to form an integrated magnetic/dielectric assembly without the use of adhesive or glue.

A ceramic containing, in mass %: Si.sub.3N.sub.4: 20.0 to 60.0%, ZrO.sub.2: 25.0 to 70.0%, at least one selected from SiC and AlN: 2.0 to 17.0%, where AlN is 10.0% or less, at least one selected from MgO, Y.sub.2O.sub.3, CeO.sub.2, CaO, HfO.sub.2, TiO.sub.2, Al.sub.2O.sub.3, SiO.sub.2, MoO.sub.3, CrO, CoO, ZnO, Ga.sub.2O.sub.3, Ta.sub.2O.sub.5, NiO and V.sub.2O.sub.5: 5.0 to 15.0%, wherein Fn calculated from the following equation (1) satisfies 0.02 to 0.40. This ceramic can be laser machined with high efficiency.

Fn=(SiC+3AlN)/(Si.sub.3N.sub.4+ZrO.sub.2)  (1)