Patent classifications
C04B2235/3239
HIGH-ENTROPY NITRIDE CERAMIC FIBER AND PREPARATION METHOD AND USE THEREOF
Disclosed are a high-entropy nitride ceramic fiber, and a preparation method and use thereof. The high-entropy ceramic fiber comprises Ti, Hf, Ta, Nb, and Mo; the high-entropy nitride ceramic fiber presents single crystal phase, and each of the elements are uniformly distributed at molecular level. The preparation method of the high-entropy ceramic fiber comprises: mixing a high-entropy ceramic precursor comprising the target metal elements, a spinning aid, and a solvent uniformly to prepare a precursor spinning solution, followed by working procedures of spinning, pyrolyzation, and nitriding to prepare the high-entropy nitride ceramic fiber. The high-entropy nitride ceramic fiber can be used in photocatalysis process of carbon dioxide to prepare methane.
CERAMIC ELECTRONIC DEVICE, POWDER MATERIAL, PASTE MATERIAL, AND MANUFACTURING METHOD OF CERAMIC ELECTRONIC DEVICE
A ceramic electronic device includes a multilayer chip in which each of a plurality of dielectric layers of which a main component is ceramic, and each of a plurality of internal electrode layers are alternately stacked. The plurality of internal electrode layers include Ni, S and Sn.
MULTILAYER CERAMIC CAPACITOR
A multilayer ceramic capacitor includes: a ceramic body in which dielectric layers and first and second internal electrodes are alternately stacked; and first and second external electrodes formed on an outer surface of the ceramic body and electrically connected to the first and second internal electrodes, respectively. In a microstructure of the dielectric layer, dielectric grains are divided by a dielectric grain size into sections each having an interval of 50 nm, respectively, a fraction of the dielectric grains in each of the sections within a range of 50 nm to 450 nm is within a range of 0.025 to 0.20, and a thickness of the dielectric layer is 0.8 μm or less.
WALL-FLOW HONEYCOMB CATALYST FOR DUST REMOVAL AND LOW-TEMPERATURE DENITRIFICATION OF FLUE GAS, AND PREPARATION PROCESS THEREOF
A wall-flow honeycomb catalyst for dust removal and low-temperature denitrification of flue gas, and a preparation process thereof are provided. The catalyst is prepared from the following raw materials in parts by weight: calcined titanium dioxide: 30 to 60 parts; crude titanium dioxide: 30 to 50 parts; boehmite: 3 to 5 parts; fused silica powder: 2 to 4 parts; binder: 0.5 to 2 parts; lubricant: 0.5 to 2 parts; vanadium-molybdenum composite oxide: 5 to 10 parts; and water: 150 to 200 parts; and the vanadium-molybdenum composite oxide is obtained by dissolving ammonium metavanadate and ammonium molybdate in an oxalic acid solution and spray-drying a resulting solution. The preparation process of the catalyst of the present disclosure is simple and low in cost.
Magnetic materials with high curie temperatures and dielectric constants
Disclosed herein are ceramic materials, such as bismuth substituted garnets, which can have high curie temperatures and high dielectric constants. In certain implementations, indium can be incorporated into the ceramic to improve certain properties and to avoid calcium compensation. The ceramic materials disclosed herein can be particular advantageous for below resonance applications.
Negative thermal expansion material, manufacturing method and composite material thereof
A negative thermal expansion material made of zirconium phosphate tungstate containing an Al atom, and having a thermal expansion coefficient of −2.0×10.sup.−6 to −3.3×10.sup.−6/K. According to the present invention, a negative thermal expansion material made of zirconium phosphate tungstate having various thermal expansion coefficients, and an industrially advantageous manufacturing method thereof can be provided.
Hot repair material of refractory materials
A hot repair material of refractory materials is provided and includes main materials and binding agents. The main materials include silicon carbide powders with six different particle sizes and a mass ratio according to particle sizes from large to small is 8:5:8:15:8:10. The binding agents include silicon nitride powders, a sodium silicate powder, an aluminum phosphate powder, a furfuryl alcohol, a silicone resin powder, a silica sol powder, an aluminum sol powder, a silicon oxide micronized powder, a vanadium oxide powder, a silicon powder, a borax and a rare earth oxide micronized powder, and a corresponding mass ratio is 20:10:4:1:5:1:1:2:0.5:0.5:0.5:0.5. The silicon carbide powders in the main materials have a good synergistic effect to improve strength of the repair material. The binding agents include low-, medium- and high-temperature binding agents for a full range of temperatures, so the repair material could gain strength continuously without a collapse temperature.
DIELECTRIC COMPOSITION, ELECTRONIC DEVICE, AND MULTILAYER ELECTRONIC DEVICE
A dielectric composition includes main-phase particles each including a main component having a perovskite crystal structure represented by a general formula of ABO.sub.3. At least a part of the main-phase particles has a core-shell structure. The dielectric composition includes RA, RB, M, and Si. Each of A, B, RA, RB, and M is one or more elements selected from a specific element group. S.sub.RA/S.sub.RB>C.sub.RA/C.sub.RB is satisfied, where C.sub.RA is an RA content (mol %) to the main component in terms of RA.sub.2O.sub.3, and C.sub.RB is an RB content (mol %) to the main component in terms of RB.sub.2O.sub.3, in the dielectric composition, and S.sub.RA is an average RA content (mol %), and S.sub.RB is an average RB content (mol %), in a shell part of the core-shell structure.
DIELECTRIC COMPOSITION, ELECTRONIC DEVICE, AND MULTILAYER ELECTRONIC DEVICE
A dielectric composition includes a main phase and segregation phases each including RE (at least one rare earth element). The main phase includes a main component having a perovskite crystal structure of ABO.sub.3 (A is one or more selected from Ba, Sr, and Ca, and B is one or more selected from Ti, Zr, and Hf). The segregation phases are classified into first segregation phases whose atomic ratio of Si to RE is 0 or more and 0.20 or less and second segregation phases whose atomic ratio of Si to the RE is more than 0.20. 0≤S1/S2≤0.10 is satisfied on a cross section of the dielectric composition, where S1 is an area ratio of the first segregation phases, and S2 is an area ratio of the second segregation phases. An atomic ratio of Si to RE in the second segregation phases is 0.80 or less on average.
ADDITIVELY-MANUFACTURED STRUCTURE FOR REACTIONARY PROCESSES
A method of additively manufacturing a structure for use in a reactionary process includes forming a material from metal or metal oxide particles, a dispersion solvent, and a binder. The method also includes depositing the material onto a build platform and curing the material to form a structure for use in a reactionary process. The structure includes the metal or metal oxide particles and is configured to provide a reaction when exposed to a reactant.