Patent classifications
C04B2235/3241
CUBIC BORON NITRIDE SINTERED MATERIAL
A cubic boron nitride sintered material includes: 20 to 80 volume % of cBN grains; and 20 to 80 volume % of a binder phase, wherein the binder phase includes first binder grains and second binder grains, in each of the first binder grains, a ratio of the number of atoms of the first metal element to a total of the number of atoms of the titanium and the number of atoms of the first metal element is more than or equal to 0.01% and less than 10%, in each of the second binder grains, this ratio is more than or equal to 10% and less than or equal to 80%, and in an X-ray diffraction spectrum of the cubic boron nitride sintered material, one or both of conditions 1 and 2 are satisfied.
DIELECTRIC MATERIAL AND MULTILAYER CERAMIC ELECTRONIC COMPONENT INCLUDING THE SAME
A dielectric material includes a main component represented by (Ba.sub.1-xCa.sub.x)(Ti.sub.1-y(Zr, Sn, Hf).sub.y)O.sub.3 (0≤x≤1 and 0≤y≤0.5); a first subcomponent including at least one of elements among Y, Dy, Ho, Er, Gd, Ce, Nd, Nb, Sm, Tb, Eu, Tm, La, Lu, and Yb; a second subcomponent including Si and/or Al; and a third subcomponent including Ba and/or Ca.
Ceramic material and wire bonding capillary
A ceramic material includes zirconia toughened alumina (ZTA), which is doped with zinc ions and other metal ions, in which the other metal ions are chromium (Cr) ions, titanium (Ti) ions, gadolinium (Gd) ions, manganese (Mn) ions, cobalt (Co) ions, iron (Fe) ions, or a combination thereof. The ceramic material may have a hardness of 1600 Hv10 to 2200 Hv10 and a bending strength of 600 MPa to 645 MPa. The ceramic material can be used as wire bonding capillary.
MULTILAYER ELECTRONIC COMPONENT AND DIELECTRIC COMPOSITION
A multilayer electronic component includes a body including a plurality of dielectric layers, wherein, wherein a central portion of the capacitance formation portion is Aa, a boundary portion of the capacitance formation portion, adjacent to the cover portions, is Ab, a dielectric grain size corresponding to the top 50% of dielectric grains, in order of enlargement, from the smallest grain size, among a plurality of dielectric grains included in Aa, is D50a, and a dielectric grain size corresponding to the top 50% of dielectric grains, in order of enlargement, from the smallest grain size, among a plurality of dielectric grains included in Ab, is D50b, D50a satisfies 190 nm or less and D50b satisfies 120 nm or greater.
Increased resonant frequency alkali-doped Y-phase hexagonal ferrites
Disclosed herein are embodiments of an enhanced resonant frequency hexagonal ferrite material, such as Y-phase hexagonal ferrite material, and methods of manufacturing. In some embodiments, sodium or potassium can be added into the crystal structure of the hexagonal ferrite material in order to achieve improved resonant frequencies in the range of 500 MHz to 1 GHz useful for radiofrequency applications.
HIGH EMISSIVITY REFRACTORY MATERIALS AND REFRACTORY COMPONENTS FORMED THEREOF
Particulate high-emissivity (high-ε) refractory products include a mixture of (a) a particulate refractory base material which includes at least one particulate binder material, at least one particulate refractory raw material filler material and optionally at least one refractory additive; and (b) a high-ε pigment in an amount sufficient to impart high-ε properties to the refractory product when cured of at least 0.80. The high-ε pigment is homogenously dispersed throughout the particulate refractory base material and is thereby less susceptible to loss of high-ε properties over time. The particulate high-ε products may be formed into an castable wet mix, an aqueous slurry or an insulating aqueous foam and cured so as to provide a component part of a high temperature refractory structure (e.g., the walls or ceiling of a refractory furnace) having high-ε properties.
Dielectric ceramic composition and multilayer ceramic capacitor comprising the same
A dielectric ceramic composition and a multilayer ceramic capacitor including the same are provided. The dielectric ceramic composition includes a BaTiO.sub.3-based base material main ingredient and an accessory ingredient, where the accessory ingredient includes dysprosium (Dy) and niobium (Nb) as first accessory ingredients. A total content of the Dy and Nb is less than or equal to 1.5 mol, based on 100 mol of Ti of the base material main ingredient, and a content of the Dy satisfies 0.7 mol<Dy<1.1 mol, based on 100 mol of Ti of the base material main ingredient.
Dielectric ceramic composition and multilayer ceramic capacitor comprising the same
A dielectric ceramic composition and a multilayer ceramic capacitor comprising the same are provided. The dielectric ceramic composition includes a BaTiO.sub.3-based base material main ingredient and an accessory ingredient, where the accessory ingredient includes dysprosium (Dy) and cerium (Ce) as first accessory ingredients. A total content of Dy and Ce is greater than 0.25 mol % and equal to or less than 1.0 mol % based on 100 mol % of the base material main ingredient.
SHAPED ARTIFICIAL POLYMER ARTICLES
Use of porous metal oxide microspheres as light stabilizers for shaped artificial polymer articles, wherein the porous metal oxide microspheres are prepared via a process comprising forming a liquid dispersion of polymer nanoparticles and a metal oxide; forming liquid droplets of the dispersion; drying the droplets to provide polymer template microspheres comprising polymer nanospheres; and removing the polymer nanospheres from the template microspheres to provide the porous metal oxide microspheres.
CBN SINTERED BODY AND CUTTING TOOL
A cBN-based ultra-high pressure sintered body contains cBN particles and a binder phase. The binder phase contains at least one of a nitride or oxide of Al or a nitride, carbide, or carbonitride of Ti, and a metal boride having an average particle diameter of 20 to 300 nm is dispersed in an amount of 0.1 to 5.0 vol % in the binder phase. The metal boride includes a metal boride (B) containing at least one of Nb, Ta, Cr, Mo, and W as a metal component and containing no Ti and a metal boride (A) containing only Ti as a metal component. In a case where a ratio (vol %) of the metal boride (A) in the metal boride is represented by V.sub.a and a ratio (vol %) of the metal boride (B) is represented by V.sub.b, a ratio of V.sub.b/V.sub.a is 0.1 to 1.0.