There is provided a dielectric ceramic composition including a base powder, wherein the base powder includes: a first major component represented by BaTiO.sub.3, a second major component represented by (Na, K)NbO.sub.3, and a third major component represented by (Bi, Na)TiO.sub.3. The base powder is represented by xBaTiO.sub.3-y(Na, K)NbO.sub.3-z(Bi, Na)TiO.sub.3, where x+y+z=1, and x, y, and z are represented by mol, and x, y and z satisfy 0.5≦x≦0.97, 0.01≦y≦0.48, and 0.02≦z≦0.2, respectively. In certain embodiments, the base powder is be represented by xBaTiO.sub.3-y(Na.sub.0.5K.sub.0.5)NbO.sub.3-z(Bi.sub.0.5Na.sub.0.5)TiO.sub.3.

A piezoelectric ceramic has a primary phase constituted by ceramic grains of perovskite crystal structure containing Pb, Nb, Zn, Ti, and Zr, and a secondary phase constituted by ZnO grains present sporadically in the primary phase. The piezoelectric ceramic of high kr and high specific dielectric constant can be sintered at low temperature and exhibit minimal characteristics variations.

A piezoelectric element includes a piezoelectric body having a main phase configured by lead zirconate titanate and a heterogenous phase configured by a different component to lead zirconate titanate, and a pair of electrodes provided on the piezoelectric body. The piezoelectric body has a surface region within 10 μm of a surface, and an inner region more than 10 μm from the surface. A surface area coverage of the heterogenous phase in a cross section of the surface region is at least 0.75% greater than a surface area coverage of the heterogenous phase in a cross section of the inner region.

A lead-free piezoelectric ceramic material has the general chemical formula xBiCoO3-y(Bi0.5Na0.5)TiO3-z(Bi0.5K0.5)TiO3, xBiCoO3-y(Bi0.5Na0.5)TiO3-zNaN-bO3, xBiCoO3-y(Bi0.5Na0.5)TiO3-zKNbO3, xBiCoO3-yBi(Mg0.5Ti0.5)O3-z(Bi0.5Na0.5)TiO3, xBiCoO3-yBa-TiO3-z(Bi0.5Na0.5)TiO3, or xBiCoO3-yNaNbO3-zKNbO3; wherein x+y+z=1, and x, y, z≠0.

The invention relates to a refractory product, a batch for producing the product, a method for producing the product, and a use of the refractory product.

Provided are: a MnZn-based ferrite which allows to have a low magnetic core loss and to suppress a time-dependent change of magnetic property under a high-temperature environment by a control of ambient oxygen concentration and an increase of the magnetic core loss, and a method for manufacturing the same. The MnZn-based ferrite is characterized in that Fe ranges from 53.25 mol % or more to 54.00 mol % or less on the basis of Fe.sub.2O.sub.3, Zn ranges from 2.50 mol % or more to 8.50 mol % or less on the basis of ZnO and Mn is the remainder on the basis of MnO, Si ranges from more than 0.001 mass % to less than 0.02 mass % on the basis of SiO.sub.2, Ca ranges from more than 0.04 mass % to less than 0.4 mass % on the basis of CaCO.sub.3, Co is less than 0.5 mass % on the basis of Co.sub.3O.sub.4, Bi is less than 0.05 mass % on the basis of Bi.sub.2O.sub.3, Ta is less than 0.05 mass % on the basis of Ta.sub.2O.sub.5, Nb is less than 0.05 mass % on the basis of Nb.sub.2O.sub.5, Ti is less than 0.3 mass % on the basis of TiO.sub.2, and Sn is less than 0.3 mass % on the basis of SnO.sub.2, and note that the converted total amount of Ta.sub.2O.sub.5 and Nb.sub.2O.sub.5 is less than 0.05 mass % and the converted total amount of TiO.sub.2 and SnO.sub.2 is less than 0.3 mass %.

Provided is a zirconia sintered body that suppresses discoloration due to porcelain. The zirconia sintered body comprises at least one of a coloring agent A: erbium oxide and a coloring agent B: nickel oxide, and a composite oxide of zirconium and vanadium.

A sintered body of the present invention is a sintered body including a first material and cubic boron nitride. The first material is partially-stabilized ZrO.sub.2 including 5 to 90 volume % of Al.sub.2O.sub.3 dispersed in crystal grain boundaries or crystal grains of partially-stabilized ZrO.sub.2.

A method of growing a FE material thin film using physical vapor deposition by pulsed laser deposition or RF sputtering is disclosed. The method involves creating a target to be used for the pulsed laser deposition in order to create a KBNNO thin film. The resultant KBNNO thin film is able to be used in photovoltaic cells.

The present disclosure relates to a method for obtaining lead-free piezoelectric materials, including: Step S100, adjusting the T/O phase boundary of a first lead-free piezoelectric material: for the first lead-free piezoelectric material, adjusting the T/O phase boundary between the tetragonal phase T and the orthorhombic phase O to be near the room temperature by doping; Step S200, further adjusting the C/T phase boundary and the O/R phase boundary: further adjusting the C/T phase boundary between the cubic paraelectric phase C and the tetragonal phase T, and the O/R phase boundary between the orthorhombic phase O and the rhombohedral phase R by doping, so as to enable the C/T phase boundary and the O/R phase boundary to approach the T/O phase boundary; and Step S300, obtaining second lead-free piezoelectric materials: obtaining multiple second lead-free piezoelectric materials with different piezoelectric constants d.sub.33 and different Curie temperatures T.sub.C in the process.